AN8085M [PANASONIC]
3-pin, positive output, low dropout voltage regulator (50 mA type); 3针，正输出，低压差稳压器（ 50毫安型）
| 型号： | AN8085M |
| 厂家： | 
PANASONIC |
| 描述： | 3-pin, positive output, low dropout voltage regulator (50 mA type) |
| 文件： | 总9页 (文件大小：155K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Voltage Regulators
AN80xx/AN80xxM Series
3-pin, positive output, low dropout voltage regulator (50 mA type)
I Overview
AN80xx series
Unit: mm
4.0 0.ꢀ
5.0 0.ꢀ
The AN80xx series and the AN80xxM series are 3-
pin, low dropout, fixed positive output type monolithic
voltage regulators. Since their power consumption can
be minimized, they are suitable for battery-used power
supply and reference voltage. 13 types of output voltage
are available; 2V, 2.5V, 3V, 3.5V (SSIP003-P-0000 only),
4V, 4.5V, 5V, 6V, 7V, 8V, 8.5V, 9V, and 10V.
ꢀ.3 0.ꢀ
0.6 0.15
I Features
• Input/output voltage difference: 0.3V max.
• Output current of up to 50mA
+0.1
+0.1
0.43
0.43
–0.05
–0.05
ꢀ.54
3
1: Input
2: Output
3: GND
• Low bias current: 0.6mA typ.
ꢀ
1
• Output voltage: 2V, 2.5V, 3V, 3.5V (SSIP003-P-0000
only), 4V, 4.5V, 5V, 6V, 7V, 8V, 8.5V, 9V, and 10V
• Built-in overcurrent protection circuit
SSIP003-P-0000
AN80xxM series
Unit: mm
1.6 max.
4.6 max.
1.8 max.
0.58 max.
1.5
0.48 max.
0.44 max.
1.5
3.0
2
1: Output
2: GND
3: Input
3
1
HSIP003-P-0000B
Note) The packages (SSIP003-P-0000 and HSIP003-
P-0000B) of this product will be changed to
lead-free type (SSIP003-P-0000S and
HSIP003-P-0000Q). See the new package di-
mensions section later of this datasheet.
I Block Diagram (AN80xxM series)
Voltage
Reference
+
R2
R1
Starter
Error
Amp.
−
Current
Limiter
R1 = 5kΩ
CIN = 0.33µF
COUT = 10µF
3
2
1
−
+
(2)
(1)
(3)
VI
VO
CIN
COUT
Note) The number in ( ) shows the pin number for the AN80xx series.
Publication date: December 2001
SFF00007CEB
1
AN80xx/AN80xxM Series
I Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Rating
20
Unit
V
Supply voltage
Supply current
VI
ICC
PD
100
mA
mW
°C
*
650
Power dissipation
Operating ambient temperature
Topr
−30 to +80
−55 to +150
−55 to +125
AN80xx series
AN80xxM series
Storage temperature
Tstg
°C
AN80xxM series is mounted on standard board (glass epoxy: 20mm × 20mm × t1.7mm with Cu foil of 1cm2 or more).
*
I Electrical Characteristics at Ta = 25°C
• AN8002, AN8002M (2V type)
Parameter
Output voltage
Symbol
VO
Conditions
Min
Typ
Max
2.08
40
Unit
Tj = 25°C
1.92
2
2
7
V
Line regulation
REGIN
VI = 2.5 to 8V, Tj = 25°C
IO = 1 to 40mA, Tj = 25°C
IO = 1 to 50mA, Tj = 25°C
VI = 1.9V, IO = 20mA, Tj = 25°C
VI = 1.9V, IO = 50mA, Tj = 25°C
IO = 0mA, Tj = 25°C
mV
mV
mV
V
20
Load regulation
REGL
10
0.06
0.12
0.6
25
0.2
0.3
1
Minimum input/output voltage difference
VDIF(min)
V
Bias current
IBias
RR
mA
dB
Ripple rejection ratio
Output noise voltage
VI = 3 to 5V, f = 120Hz
f = 10Hz to 100kHz
62
74
Vno
60
µV
Output voltage temperature coefficient
Tj = −30 to +125°C
∆VO/Ta
0.1
mV/°C
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 3V, IO = 20mA and CO = 10µF.
•
AN8025, AN8025M (2.5V type)
Parameter
Output voltage
Symbol
VO
Conditions
Min
Typ
2.5
2.5
8
Max
2.6
50
Unit
Tj = 25°C
2.4
V
Line regulation
REGIN
VI = 3 to 8.5V, Tj = 25°C
IO = 1 to 40mA, Tj = 25°C
IO = 1 to 50mA, Tj = 25°C
VI = 2.4V, IO = 20mA, Tj = 25°C
VI = 2.4V, IO = 50mA, Tj = 25°C
IO = 0mA, Tj = 25°C
mV
mV
mV
V
20
Load regulation
REGL
12.5
0.07
0.12
0.6
72
25
0.2
0.3
1
Minimum input/output voltage difference
VDIF(min)
V
Bias current
IBias
RR
mA
dB
Ripple rejection ratio
Output noise voltage
VI = 3.5 to 5.5V, f = 120Hz
f = 10Hz to 100kHz
60
Vno
65
µV
Output voltage temperature coefficient
Tj = −30 to +125°C
∆VO/Ta
0.13
mV/°C
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 3.5V, IO = 20mA and CO = 10µF.
SFF00007CEB
2
AN80xx/AN80xxM Series
I Electrical Characteristics at Ta = 25°C (continued)
•
AN8003, AN8003M (3V type)
Parameter
Symbol
VO
Conditions
Min
Typ
3
Max
3.12
50
Unit
Output voltage
Tj = 25°C
2.88
V
Line regulation
REGIN
VI = 3.5 to 9V, Tj = 25°C
IO = 1 to 40mA, Tj = 25°C
IO = 1 to 50mA, Tj = 25°C
VI = 2.9V, IO = 20mA, Tj = 25°C
VI = 2.9V, IO = 50mA, Tj = 25°C
IO = 0mA, Tj = 25°C
3
mV
mV
mV
V
9
25
Load regulation
REGL
15
30
0.07
0.12
0.6
70
0.2
0.3
1
Minimum input/output voltage difference
VDIF(min)
V
Bias current
IBias
RR
mA
dB
Ripple rejection ratio
Output noise voltage
VI = 4 to 6V, f = 120Hz
f = 10Hz to 100kHz
58
Vno
70
µV
Output voltage temperature coefficient
Tj = −30 to +125°C
∆VO/Ta
0.15
mV/°C
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 4V, IO = 20mA and CO = 10µF.
•
AN8035(3.5V type)
Parameter
Symbol
VO
Conditions
Min
Typ
3.5
3.5
10
Max
3.64
50
Unit
Output voltage
Tj = 25°C
3.36
V
Line regulation
REGIN
VI = 4 to 9.5V, Tj = 25°C
IO = 1 to 40mA, Tj = 25°C
IO = 1 to 50mA, Tj = 25°C
VI = 3.4V, IO = 20mA, Tj = 25°C
VI = 3.4V, IO = 50mA, Tj = 25°C
IO = 0mA, Tj = 25°C
mV
mV
mV
V
30
Load regulation
REGL
20
40
0.07
0.12
0.6
69
0.2
0.3
1
Minimum input/output voltage difference
VDIF(min)
V
Bias current
IBias
RR
mA
dB
Ripple rejection ratio
Output noise voltage
VI = 4.5 to 6.5V, f = 120Hz
f = 10Hz to 100kHz
57
Vno
75
µV
Output voltage temperature coefficient
Tj = −30 to +125°C
∆VO/Ta
0.2
mV/°C
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 4.5V, IO = 20mA and CO = 10µF.
•
AN8004, AN8004M (4V type)
Parameter
Symbol
VO
Conditions
Min
Typ
4
Max
4.16
50
Unit
Output voltage
Tj = 25°C
3.84
V
Line regulation
REGIN
VI = 4.5 to 10V, Tj = 25°C
IO = 1 to 40mA, Tj = 25°C
IO = 1 to 50mA, Tj = 25°C
VI = 3.8V, IO = 20mA, Tj = 25°C
VI = 3.8V, IO = 50mA, Tj = 25°C
IO = 0mA, Tj = 25°C
3.5
10
mV
mV
mV
V
30
Load regulation
REGL
20
40
0.07
0.12
0.6
67
0.2
0.3
1
Minimum input/output voltage difference
VDIF(min)
V
Bias current
IBias
RR
mA
dB
Ripple rejection ratio
Output noise voltage
VI = 5 to 7V, f = 120Hz
f = 10Hz to 100kHz
56
Vno
80
µV
Output voltage temperature coefficient
Tj = −30 to +125°C
∆VO/Ta
0.2
mV/°C
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 5V, IO = 20mA and CO = 10µF.
SFF00007CEB
3
AN80xx/AN80xxM Series
I Electrical Characteristics at Ta = 25°C (continued)
•
AN8045, AN8045M (4.5V type)
Parameter
Symbol
VO
Conditions
Min
Typ
4.5
4
Max
4.68
50
Unit
Output voltage
Tj = 25°C
4.32
V
Line regulation
REGIN
VI = 5 to 10.5V, Tj = 25°C
IO = 1 to 40mA, Tj = 25°C
IO = 1 to 50mA, Tj = 25°C
VI = 4.3V, IO = 20mA, Tj = 25°C
VI = 4.3V, IO = 50mA, Tj = 25°C
IO = 0mA, Tj = 25°C
mV
mV
mV
V
11
35
Load regulation
REGL
23
45
0.07
0.12
0.7
66
0.2
0.3
1
Minimum input/output voltage difference
VDIF(min)
V
Bias current
IBias
RR
mA
dB
Ripple rejection ratio
Output noise voltage
VI = 5.5 to 7.5V, f = 120Hz
f = 10Hz to 100kHz
54
Vno
85
µV
Output voltage temperature coefficient
Tj = −30 to +125°C
∆VO/Ta
0.23
mV/°C
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 5.5V, IO = 20mA and CO = 10µF.
•
AN8005, AN8005M (5V type)
Parameter
Symbol
VO
Conditions
Min
Typ
5
Max
5.2
50
Unit
Output voltage
Tj = 25°C
4.8
V
Line regulation
REGIN
VI = 5.5 to 11V, Tj = 25°C
IO = 1 to 40mA, Tj = 25°C
IO = 1 to 50mA, Tj = 25°C
VI = 4.8V, IO = 20mA, Tj = 25°C
VI = 4.8V, IO = 50mA, Tj = 25°C
IO = 0mA, Tj = 25°C
4.5
12
mV
mV
mV
V
40
Load regulation
REGL
25
50
0.07
0.12
0.7
64
0.2
0.3
1
Minimum input/output voltage difference
VDIF(min)
V
Bias current
IBias
RR
mA
dB
Ripple rejection ratio
Output noise voltage
VI = 6 to 8V, f = 120Hz
f = 10Hz to 100kHz
52
Vno
95
µV
Output voltage temperature coefficient
Tj = −30 to +125°C
∆VO/Ta
0.25
mV/°C
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 6V, IO = 20mA and CO = 10µF.
•
AN8006, AN8006M (6V type)
Parameter
Output voltage
Symbol
VO
Conditions
Min
5.76
Typ
Max
6.24
Unit
Tj = 25°C
6
V
Line regulation
REGIN
VI = 6.5 to 12V, Tj = 25°C
IO = 1 to 40mA, Tj = 25°C
IO = 1 to 50mA, Tj = 25°C
VI = 5.8V, IO = 20mA, Tj = 25°C
VI = 5.8V, IO = 50mA, Tj = 25°C
IO = 0mA, Tj = 25°C
5.5
13
60
45
mV
mV
mV
V
Load regulation
REGL
28
55
0.07
0.13
0.7
63
0.2
0.3
1.2
Minimum input/output voltage difference
VDIF(min)
V
Bias current
IBias
RR
mA
dB
Ripple rejection ratio
Output noise voltage
VI = 7 to 9V, f = 120Hz
f = 10Hz to 100kHz
51
Vno
105
0.3
µV
Output voltage temperature coefficient
Tj = −30 to +125°C
∆VO/Ta
mV/°C
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 7V, IO = 20mA and CO = 10µF.
SFF00007CEB
4
AN80xx/AN80xxM Series
I Electrical Characteristics at Ta = 25°C (continued)
•
AN8007, AN8007M (7V type)
Parameter
Symbol
VO
Conditions
Min
Typ
7
Max
7.28
70
Unit
Output voltage
Tj = 25°C
6.72
V
Line regulation
REGIN
VI = 7.5 to 13V, Tj = 25°C
IO = 1 to 40mA, Tj = 25°C
IO = 1 to 50mA, Tj = 25°C
VI = 6.8V, IO = 20mA, Tj = 25°C
VI = 6.8V, IO = 50mA, Tj = 25°C
IO = 0mA, Tj = 25°C
6.5
14
mV
mV
mV
V
50
Load regulation
REGL
31
60
0.07
0.13
0.7
62
0.2
0.3
1.3
Minimum input/output voltage difference
VDIF(min)
V
Bias current
IBias
RR
mA
dB
Ripple rejection ratio
Output noise voltage
VI = 8 to 10V, f = 120Hz
f = 10Hz to 100kHz
50
Vno
120
0.35
µV
Output voltage temperature coefficient
Tj = −30 to +125°C
∆VO/Ta
mV/°C
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 8V, IO = 20mA and CO = 10µF.
•
AN8008, AN8008M (8V type)
Parameter
Symbol
VO
Conditions
Min
Typ
8
Max
8.32
80
Unit
Output voltage
Tj = 25°C
7.68
V
Line regulation
REGIN
VI = 8.5 to 14V, Tj = 25°C
IO = 1 to 40mA, Tj = 25°C
IO = 1 to 50mA, Tj = 25°C
VI = 7.8V, IO = 20mA, Tj = 25°C
VI = 7.8V, IO = 50mA, Tj = 25°C
IO = 0mA, Tj = 25°C
7.5
15
mV
mV
mV
V
55
Load regulation
REGL
34
65
0.07
0.14
0.7
61
0.2
0.3
1.3
Minimum input/output voltage difference
VDIF(min)
V
Bias current
IBias
RR
mA
dB
Ripple rejection ratio
Output noise voltage
VI = 9 to 11V, f = 120Hz
f = 10Hz to 100kHz
49
Vno
135
0.4
µV
Output voltage temperature coefficient
Tj = −30 to +125°C
∆VO/Ta
mV/°C
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 9V, IO = 20mA and CO = 10µF.
•
AN8085, AN8085M (8.5V type)
Parameter
Symbol
VO
Conditions
Min
Typ
8.50
8.3
Max
8.84
90
Unit
Output voltage
Tj = 25°C
8.16
V
Line regulation
REGIN
VI = 9 to 14.5V, Tj = 25°C
IO = 1 to 40mA, Tj = 25°C
IO = 1 to 50mA, Tj = 25°C
VI = 8.3V, IO = 20mA, Tj = 25°C
VI = 8.3V, IO = 50mA, Tj = 25°C
IO = 0mA, Tj = 25°C
mV
mV
mV
V
16
60
Load regulation
REGL
36
70
0.07
0.14
0.8
0.2
0.3
1.4
Minimum input/output voltage difference
VDIF(min)
V
Bias current
IBias
RR
mA
dB
Ripple rejection ratio
Output noise voltage
VI = 9.5 to 11.5V, f = 120Hz
f = 10Hz to 100kHz
48
60
Vno
140
0.43
µV
Output voltage temperature coefficient
Tj = −30 to +125°C
∆VO/Ta
mV/°C
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 9.5V, IO = 20mA and CO = 10µF.
SFF00007CEB
5
AN80xx/AN80xxM Series
I Electrical Characteristics at Ta = 25°C (continued)
•
AN8009, AN8009M (9V type)
Parameter
Output voltage
Symbol
VO
Conditions
Min
Typ
9
Max
9.36
100
70
Unit
Tj = 25°C
8.64
V
Line regulation
REGIN
VI = 9.5 to 15V, Tj = 25°C
IO = 1 to 40mA, Tj = 25°C
IO = 1 to 50mA, Tj = 25°C
VI = 8.8V, IO = 20mA, Tj = 25°C
VI = 8.8V, IO = 50mA, Tj = 25°C
IO = 0mA, Tj = 25°C
9
mV
mV
mV
V
17
Load regulation
REGL
37
75
0.07
0.14
0.8
59
0.2
0.3
1.4
Minimum input/output voltage difference
VDIF(min)
V
Bias current
IBias
RR
mA
dB
Ripple rejection ratio
Output noise voltage
VI = 10 to 12V, f = 120Hz
f = 10Hz to 100kHz
47
Vno
150
0.45
µV
Output voltage temperature coefficient
Tj = −30 to +125°C
∆VO/Ta
mV/°C
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 10V, IO = 20mA and CO = 10µF.
•
AN8010, AN8010M (10V type)
Parameter
Output voltage
Symbol
VO
Conditions
Min
Typ
10
Max
10.4
100
75
Unit
Tj = 25°C
9.6
V
Line regulation
REGIN
VI = 10.5 to 16V, Tj = 25°C
IO = 1 to 40mA, Tj = 25°C
IO = 1 to 50mA, Tj = 25°C
VI = 9.8V, IO = 20mA, Tj = 25°C
VI = 9.8V, IO = 50mA, Tj = 25°C
IO = 0mA, Tj = 25°C
10
mV
mV
mV
V
18
Load regulation
REGL
40
85
0.07
0.14
0.8
58
0.2
0.3
1.4
Minimum input/output voltage difference
VDIF(min)
V
Bias current
IBias
RR
mA
dB
Ripple rejection ratio
Output noise voltage
VI = 11 to 13V, f = 120Hz
f = 10Hz to 100kHz
46
Vno
165
0.5
µV
Output voltage temperature coefficient
Tj = −30 to +125°C
∆VO/Ta
mV/°C
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 11V, IO = 20mA and CO = 10µF.
SFF00007CEB
6
AN80xx/AN80xxM Series
I Main Characteristics
PD Ta (AN80xx series)
PD Ta (AN80xxM series)
800
700
600
500
400
300
200
100
0
800
700
600
500
400
300
200
100
0
Mounted on standard board
glass epoxy: 20 × 20 × t1.7mm3
with Cu foil of 1cm2 or more
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
RR f
VO VI
12
10
8
AN8005
CO = 10µF
IO = 0mA
80
70
60
50
40
30
AN8010/M
6
AN8005/M
AN8002/M
15
4
2
0
50 100
300
1k
3k
10k
30k 100k
50k
0
5
10
20
500
5k
Frequency f (Hz)
Input voltage VI (V)
VO IO
VO Ta
5.3
5.2
5.1
5.0
4.9
4.8
4.7
5.3
5.2
5.1
5.0
4.9
4.8
4.7
AN8005
VI = 6V
CO = 10µF
IO = 0mA
AN8005
VI = 6V
CO = 10µF
0
10
20
30
40
50
60
70
80
90
100
−40 −20
0
20
40
60
80
100 120 140 160
Output current IO (mA)
Ambient temperature Ta (°C)
SFF00007CEB
7
AN80xx/AN80xxM Series
I Application Circuit Example
VI
VO
AN80xx
AN80xxM
Series
+
−
0.33µF
10µF
• AN80xx and AN80xxM series have their internal gain increased in order to improve performance. When the power
line on the output side is long, use a capacitor of 10µF.
Also, the capacitor on the output side should be attached as close to the IC as possible.
• When using at a low temperature, it is recommended to use the capacitors with low internal impedance (for example,
tantalum capacitor) for output capacitors.
I New Package Dimensions (Unit: mm)
•
SSIP003-P-0000S (Lead-free package)
4.00 0.20
5.00 0.20
0.60 0.15
0.40 0.10
2.30 0.20
+0.10
0.40
-
0.05
1
3
1.27
1.27
•
HSIP003-P-0000Q (Lead-free package)
4.50 0.10
1.55 0.20
1
3
+0.10
+0.10
+0.10
0.40
0.40
-0.05
0.42
-
0.05
-
0.05
M
0.15
+0.10
0.50
-
0.05
1.50
3.00
(0.75)
0.10
SFF00007CEB
8
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2001 MAR
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