3SK143O [PANASONIC]

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MINI PACKAGE-4;


型号：	3SK143O
厂家：	PANASONIC
描述：	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MINI PACKAGE-4 放大器光电二极管晶体管
文件：	总3页 (文件大小：165K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

High Frequency FETs

3SK143

Silicon N-Channel 4-pin MOS FET

For UHF high-gain and low-noise amplification

unit: mm

2.8–⁺0⁰.^.3²

1.5–⁺0⁰.^.3²

■ Features

0.65±0.15

● Low noise-figure (NF)

● Large power gain PG

0.5R

● Mini-type package, allowing downsizing of the sets and automatic

insertion through the tape/magazine packing.

■ Absolute Maximum Ratings (Ta = 25°C)

Parameter

Drain to Source voltage

Gate 1 to Source voltage

Gate 2 to Source voltage

Drain current

Symbol

V_DS

V_G1S

V_G2S

I_D

Ratings

Unit

±8

0.4±0.2

1: Source

2: Drain

3: Gate2

4: Gate1

±8

±30

°C

Allowable power dissipation

Channel temperature

Storage temperature

P_D

200

Mini Type Package (4-pin)

T_ch

150

Marking Symbol: 3D

T_stg

−55 to +150

■ Electrical Characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Drain to Source cut-off current

Gate 1 cut-off current

I_DSS

I_G1SS

I_G2SS

V_DS= 10V, V_GS= 0, V_G2S= 4V

V_DS= V_G2S= 0, V_G1S= ±8V

V_DS= V_G1S= 0, V_G2S= ±8V

I_D= 100µA, V_G1S= −5V, V_G2S= 0

V_DS= 10V, V_G2S= 4V, I_D= 100µA

0.2

±20

Gate 2 cut-off current

Drain to Source voltage

V_DSX

−3

−1

Gate 1 to Source cut-off voltage V_G1SC

Gate 2 to Source cut-off voltage V_G2SC

_DS= 10V, V_G2S= 0, I_D= 100µA

Forward transfer admittance

| Y_fs|

V_DS= 10V, I_D= 10mA, V_G2S= 4V, f = 1kHz

1.9

0.9

0.02

2.4

1.2

Input capacitance (Common Source) C_iss

Output capacitance (Common Source) C_oss

Reverse transfer capacitance (Common Source) C_rss

1.4

0.6

V_DS= 10V, V_G1S= V_G2S= −5V

f = 1MHz

Power gain

Noise figure

V_DS= 8V, I_D= 8mA, V_G2S= 3V

f = 800MHz

¹R_D= 56Ω and R_S= 270Ω

²I_DSSrank classification

Rank

I_DSS(mA)

0.2 to 1.5

3DO

0.5 to 4

3DP

3 to 13

3DQ

Marking Symbol

High Frequency FETs

3SK143

P_D

I_DV_DS

I_D

V_G1S

320

280

240

200

160

120

V_G2S=4V 3V

V_G2S=4V

Ta=25˚C

V_DS=10V

Ta=25˚C

V_G1S=0.6V

0.4V

0.2V

– 0.2V

– 0.4V

–2

20 40 60 80 100 120 140 160

–1

(

)

( )

Gate 1 to source voltage V_G1SV

Ambient temperature Ta ˚C

Drain to source voltage V_DS

| Y_fs| V_G1S

C_iss, C_oss

V_DS

V_G1S

2.4

2.0

1.6

1.2

0.8

0.4

_DS=10V

V_G1S=V_G2S=–5V

f=1MHz

Ta=25˚C

V_DS=8V

f=800MHz

Ta=25˚C

f=1kHz

Ta=25˚C

C_iss

V_G2S=4V

V_G2S=5V

C_oss

–2

–1

0.1

0.3

100

–1

(

)

( )

Gate 1 to source voltage V_G1SV

Gate 1 to source voltage V_G1S

Drain to source voltage V_DS

V_G1S

V_G2S

I_D

V_G1S

V_DS=8V

f=800MHz

Ta=25˚C

V_DS=8V

f=800MHz

Ta=25˚C

V_DS=10V

V_G2S=4V

V_G2S=1V

–10

–20

–30

Ta=75˚C

25˚C

–25˚C

–2

–2.0

–1

–2

–1.6

–1.2

– 0.8 – 0.4

( )

Gate 1 to source voltage V_G1SV

Gate 1 to source voltage V_G1S

Gate 2 to source voltage V_G2S

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples

of the products, and no license is granted under any intellectual property right or other right owned by our company or any other

company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other

company which may arise as a result of the use of technical information described in this book.

(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office

equipment, communications equipment, measuring instruments and household appliances).

Consult our sales staff in advance for information on the following applications:

– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support

systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-

ucts may directly jeopardize life or harm the human body.

– Any applications other than the standard applications intended.

(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-

provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

Standards in advance to make sure that the latest specifications satisfy your requirements.

(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita

Electric Industrial Co., Ltd.

3SK143O [PANASONIC]

相关型号：

3SK143P

3SK143Q

3SK143TX

3SK144

3SK144Q

3SK144R

3SK144TX

3SK145

3SK146

3SK146-OTE85L

3SK146-OTE85R

3SK146OTE85L