2SK301Q [PANASONIC]
Small Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-92, SC-43, 3 PIN;
| 型号： | 2SK301Q |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-92, SC-43, 3 PIN |
| 文件： | 总3页 (文件大小：195K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Junction FETs (Small Signal)
2SK0301 (2SK301)
Silicon N-Channel Junction FET
For low-frequency amplification
For switching
unit: mm
5.0±0.2
4.0±0.2
ꢀ Features
ꢁ Low noies, high gain
ꢁ High gate to drain voltage VGDO
ꢀ Absolute Maximum Ratings (Ta = 25°C
+0.15
–0.1
+0.15
0.45
0.45
–0.1
+0.6
–0.2
+0.6
2.5
2.5
–0.2
Parameter
Drain to Source voltage
Gate to Drain voltage
Gate to Source voltage
Drain current
Symol
VDSX
DO
VGSO
ID
Ratis
55
Unit
V
1: Drain
2: Gate
3: Source
1
2 3
−55
V
−5
V
JEDEC: TO-92
EIAJ: SC-43
TO-92-A1 Package
±0
mA
mA
mW
°C
Gate curren
IG
10
Allowable powr disspation
Junction empratur
orage teme
PD
50
Tj
125
Tstg
5 to +125
°C
ꢀ Elctrical Characteristics (Ta = 25°C)
r
Symbol
Conditions
min
typ
max
20
Unit
mA
nA
V
*
Drain to current
Gate to Sourcurrent
Gate to Drain voge
IDSS
VDS = 10V, VGS = 0
VGS = −30V, VDS = 0
G = −100µA, VDS = 0
1
IGSS
VGDC
VGSC
gm
−10
I
−55
2.5
−80
Gate to Source cut-off voltage
Mutual conductance
VDS = 10V, ID = 10µA
−5
V
VDS = 10V, VGS = 0, f = 1kHz
7.5
6.5
1.9
mS
pF
Input capacitance (Common Source) Ciss
VDS = 10V, VGS = 0, f = 1MHz
Reverse transfer capacitance (Common Source) Crss
pF
VDS = 10V, VGS = 0, Rg = 100kΩ
Noise figure
NF
0.5
dB
f = 100Hz
* IDSS rank classification
Runk
P
Q
R
S
IDSS (mA)
1 to 3
2 to 6.5
5 to 12
10 to 20
Note) The part number in the parenthesis shows conventional part number.
247
Silicon Junction FETs (Small Signal)
2SK0301
PD Ta
ID VDS
ID VDS
320
280
240
200
160
120
80
5
4
3
2
1
0
10
8
Ta=25˚C
Ta=25˚C
VGS=0V
– 0.2V
6
VGS=0
– 0.2V
– 0.4V
– 0.6V
– 0.8V
4
– 0.6V
– 0.8V
2
40
– 1.0V
– 1.2V
10
–1.0V
0
0
20 40 60 80 100 120 140 160
0
0
0.2
0
0.4
0.5
0
2
4
6
8
12
(
)
(
V
)
Ambient temperature Ta ˚C
n to surce voltage VDS
Drain to source voltage VDS
ID VGS
gm VGS
gm ID
16
14
12
10
8
12
10
8
12
10
8
VDS=10V
a=25˚C
VDS=10V
Ta=25˚C
VDS=1V
IDSS=7.5mA
6
Ta=25˚C
25˚C
6
4
4
2
2
2
0
0
0
– 0.2 – 0.4 – 0.6 –1.0 1.2
–2.
–1.6
–1.2
– 0.8 – 0.4
0
)
0
2
4
6
8
10
V
)
(
V
(
)
Gate tce volage V
Gate to source voltage VGS
Drain current ID mA
VDS
Coss VDS
Crss VDS
16
14
12
10
8
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
VG=0
Ta=25˚C
VGS=0
Ta=25˚C
VGS=0
Ta=25˚C
6
4
2
0
0
2
4
6
8
10
12
0
2
4
6
8
10
12
0
2
4
6
8
10
12
(
V
)
(
V
)
( )
Drain to source voltage VDS V
Drain to source voltage VDS
Drain to source voltage VDS
248
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic contrl equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability equired, or if the failure or malfunction of the prod-
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– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book re subjet to change wnotice for modification and/or im-
provement. At the final stage of your design, purchasingouse f the roducts, therfor the most up-to-date Product
Standards in advance to make sure that the latest specifictions saisfy your requirements.
(5) When designing your equipment, comply with the rnge f absolute maximuing nd the guaranteed operating conditions
(operating power supply voltage and operating nvirnt etc.). Especiallyplee be creful not to exceed the range of absolute
maximum rating on the transient state, such as powpower-off and mode-witching. Otherwise, we will not be liable for any
defect which may arise later in your equpment
Even when the products are used withthe guarnteed values, ake nto te cosideration of incidence of break down and failure
mode, possible to occur to semicuctor roducts. Mesures the syems such as redundant design, arresting the spread of fire
or preventing glitch are recomin ordeto prevent pysicainjury, fire, social damages, for example, by using the products.
(6) Comply with the instructionfor ue in rder to prevent reakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mcanical stress) at the time of handlin, mounting or at customer's process. When using products for which
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(7) This book may e noreprinted or repwhther wholly or partially, without the prior written permission of Matsushita
Electric ndurial Co., Ltd.
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