2SD892Q [PANASONIC]

Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43A, 3 PIN;


型号：	2SD892Q
厂家：	PANASONIC
描述：	Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43A, 3 PIN 放大器晶体管
文件：	总3页 (文件大小：180K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Transistor

2SD892, 2SD892A

Silicon NPN epitaxial planer type darlington

For low-frequency amplification

Unit: mm

4.0±0.2

5.0±0.2

Features

■

●

Forward current transfer ratio h_FEis designed high, which is ap-

propriate to the driver circuit of motors and printer hammer: h_FE

= 4000 to 20000.

●

A shunt resistor is omitted from the driver.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

Ratings

Unit

0.45–⁺0⁰.^.1²

Collector to

2SD892

2SD892A

2SD892

1.27

V_CBO

base voltage

Collector to

V_CEO

1 2 3

1:Emitter

2:Collector

3:Base

JEDEC:TO–92

EIAJ:SC–43A

emitter voltage 2SD892A

Emitter to base voltage

Peak collector current

Collector current

V_EBO

I_CP

I_C

2.54±0.15

0.75

0.5

Internal Connection

Collector power dissipation

Junction temperature

Storage temperature

P_C

400

˚C

T_j

150

T_stg

–55 ~ +150

≈200Ω

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

100

Unit

Collector cutoff current

Emitter cutoff current

V_CB= 25V, I_E= 0

I_EBO

V_EB= 4V, I_C= 0

Collector to base

voltage

2SD892

2SD892A

V_CBO

I_C= 100µA, I_E= 0

Collector to emitter 2SD892

V_CEO

V_EBO

I_C= 1mA, I_B= 0

voltage

2SD892A

Emitter to base voltage

I_E= 100µA, I_C= 0

V_CE= 10V, I_C= 500mA^*2

I_C= 500mA, I_B= 0.5mA^*2

V_CB= 10V, I_E= –50mA, f = 200MHz

4000

20000

2.5

Forward current transfer ratio

h_FE

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

Transition frequency

f_T

150

MHz

^*2Pulse measurement

Rank classification

Rank

h_FE

4000 ~ 10000 8000 ~ 20000

Transistor

2SD892, 2SD892A

P_C— Ta

V_CE(sat)— I_C

V_BE(sat)— I_C

500

400

300

200

100

I_C/I_B=1000

25˚C

Ta=–25˚C

25˚C

Ta=75˚C

–25˚C

75˚C

0.3

0.1

0.3

0.1

0.03

0.01

0.03

0.01

100 125 150

0.01 0.03

0.1

0.3

0.01 0.03

0.1

0.3

(

)

(

)

( )

Collector current I_CA

Ambient temperature Ta ˚C

Collector current I_C

h_FE— I_C

C_ob— V_CB

10⁵

10⁴

10³

10²

V_CE=10V

I_E=0

f=1MHz

Ta=25˚C

Ta=75˚C

25˚C

–25˚C

0.01 0.03

0.1

0.3

100

( )

Collector current I_C

Collector to base voltage V_CB

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples

of the products, and no license is granted under any intellectual property right or other right owned by our company or any other

company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other

company which may arise as a result of the use of technical information described in this book.

(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office

equipment, communications equipment, measuring instruments and household appliances).

Consult our sales staff in advance for information on the following applications:

– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support

systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-

ucts may directly jeopardize life or harm the human body.

– Any applications other than the standard applications intended.

(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-

provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

Standards in advance to make sure that the latest specifications satisfy your requirements.

(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita

Electric Industrial Co., Ltd.

2SD892Q [PANASONIC]

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