2SD874A [PANASONIC]
Silicon PNP epitaxial planer type(For low-frequency output amplification); PNP硅外延平面型（对于低频输出放大）
| 型号： | 2SD874A |
| 厂家： | 
PANASONIC |
| 描述： | Silicon PNP epitaxial planer type(For low-frequency output amplification) |
| 文件： | 总2页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistor
2SB766, 2SB766A
Silicon PNP epitaxial planer type
For low-frequency output amplification
Unit: mm
Complementary to 2SD874 and 2SD874A
Features
Large collector power dissipation PC.
■
●
1.5±0.1
4.5±0.1
1.6±0.2
●
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
45°
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Symbol
Ratings
Unit
0.4±0.08
0.4±0.04
0.5±0.08
1.5±0.1
Collector to
base voltage
Collector to
2SB766
–30
–60
VCBO
V
3.0±0.15
2SB766A
2SB766
3
2
1
–25
VCEO
V
emitter voltage 2SB766A
Emitter to base voltage
Peak collector current
Collector current
–50
marking
VEBO
ICP
–5
V
A
–1.5
–1
IC
A
1:Base
*
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Collector power dissipation
Junction temperature
Storage temperature
PC
1
W
˚C
˚C
Tj
150
(2SB766)
Tstg
–55 ~ +150
Marking symbol : A
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
*
(2SB766A)
B
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
VCB = –20V, IE = 0
min
typ
max
Unit
Collector cutoff current
– 0.1
µA
Collector to base
voltage
2SB766
2SB766A
–30
–60
–25
–50
–5
VCBO
IC = –10µA, IE = 0
V
Collector to emitter 2SB766
VCEO
VEBO
IC = –2mA, IB = 0
V
V
voltage
2SB766A
Emitter to base voltage
IE = –10µA, IC = 0
VCE = –10V, IC = –500mA*2
VCE = –5V, IC = –1A*2
85
340
*1
hFE1
hFE2
Forward current transfer ratio
50
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = –500mA, IB = –50mA*2
IC = –500mA, IB = –50mA*2
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
– 0.2
– 0.4
–1.2
V
V
– 0.85
200
Transition frequency
fT
MHz
pF
Collector output capacitance
Cob
20
30
*2 Pulse measurement
*1
h
Rank classification
FE1
Rank
hFE1
Q
R
S
85 ~ 170
AQ
120 ~ 240
AR
170 ~ 340
AS
2SB766
Marking
Symbol
2SB766A
BQ
BR
BS
1
Transistor
2SB766, 2SB766A
PC — Ta
IC — VCE
VCE(sat) — IC
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
–1.50
–1.25
–1.00
– 0.75
– 0.50
– 0.25
0
–100
IC/IB=10
Printed circut board: Copper
foil area of 1cm2 or more, and
the board thickness of 1.7mm
for the collector portion.
Ta=25˚C
–30
–10
IB=–10mA
–9mA
–8mA
–7mA
–6mA
–3
–1
–5mA
Ta=75˚C
25˚C
–4mA
–3mA
–2mA
– 0.3
– 0.1
–25˚C
–1mA
– 0.03
– 0.01
0
20 40 60 80 100 120 140 160
0
–2
–4
–6
–8
–10
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
(
)
(
V
)
( )
Collector current IC A
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VBE(sat) — IC
hFE — IC
fT — IE
–100
600
200
180
160
140
120
100
80
VCB=–10V
Ta=25˚C
IC/IB=10
VCE=–10V
–30
–10
500
400
300
200
100
0
–3
–1
25˚C
Ta=75˚C
Ta=–25˚C
75˚C
25˚C
– 0.3
– 0.1
60
–25˚C
40
– 0.03
– 0.01
20
0
1
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
3
10
30
100
(
A
)
(
A
)
(
)
Collector current IC
Collector current IC
Emitter current IE mA
Cob — VCB
Area of safe operation (ASO)
50
45
40
35
30
25
20
15
10
5
–10
Single pulse
Ta=25˚C
IE=0
f=1MHz
Ta=25˚C
–3
–1
ICP
IC
t=10ms
– 0.3
– 0.1
t=1s
– 0.03
– 0.01
– 0.003
– 0.001
0
–1
–3
–10
–30
–100
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
(
V
)
( )
Collector to emitter voltage VCE V
Collector to base voltage VCB
2
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