2SD2151 [PANASONIC]
Silicon NPN epitaxial planar type(For power switching); NPN硅外延平面型（适用于功率开关）
| 型号： | 2SD2151 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN epitaxial planar type(For power switching) |
| 文件： | 总3页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD2151
Silicon NPN epitaxial planar type
For power switching
Unit: mm
Features
■
10.0±0.2
5.5±0.2
4.2±0.2
2.7±0.2
●
Low collector to emitter saturation voltage VCE(sat)
●
Satisfactory linearity of foward current transfer ratio hFE
●
Large collector current IC
φ3.1±0.1
●
Full-pack package which can be installed to the heat sink with
one screw
Absolute Maximum Ratings (T =25˚C)
1.3±0.2
■
C
1.4±0.1
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
+0.2
–0.1
0.5
0.8±0.1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
130
80
V
2.54±0.25
7
V
5.08±0.5
20
A
1
2
3
IC
10
A
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Collector power TC=25°C
30
PC
W
dissipation
Ta=25°C
2
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
10
Unit
µA
µA
V
Collector cutoff current
Emitter cutoff current
VCB = 100V, IE = 0
IEBO
VCEO
hFE1
VEB = 5V, IC = 0
50
Collector to emitter voltage
IC = 10mA, IB = 0
VCE = 2V, IC = 0.1A
80
45
90
30
*
Forward current transfer ratio
hFE2
V
CE = 2V, IC = 3A
260
hFE3
VCE = 2V, IC = 6A
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
IC = 6A, IB = 0.3A
0.5
1.5
1.5
2.5
V
V
Collector to emitter saturation voltage
Base to emitter saturation voltage
IC = 10A, IB = 1A
IC = 6A, IB = 0.3A
V
IC = 10A, IB = 1A
V
Transition frequency
Turn-on time
Storage time
Fall time
VCE = 10V, IC = 0.5A, f = 1MHz
20
0.5
2.0
0.2
MHz
µs
ton
IC = 6A, IB1 = 0.6A, IB2 = – 0.6A,
VCC = 50V
tstg
µs
tf
µs
*hFE2 Rank classification
Rank
hFE2
Q
P
90 to 180
130 to 260
1
Power Transistors
2SD2151
PC — Ta
IC — VCE
VCE(sat) — IC
40
20
16
12
8
10
IC/IB=10
TC=25˚C
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=2W)
IB=400mA
3
1
30
20
10
0
(1)
250mA
200mA
160mA
TC=100˚C
0.3
0.1
120mA
100mA
80mA
60mA
25˚C
–25˚C
(2)
(3)
40mA
20mA
4
0.03
0.01
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0.1
0.3
1
3
10
(
)
( )
V
( )
Collector current IC A
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VBE(sat) — IC
hFE — IC
fT — IC
100
1000
IC/IB=10
VCE=10V
f=1MHz
TC=25˚C
VCE=2V
1000
30
10
300
100
300
100
TC=100˚C
25˚C
3
1
30
10
–25˚C
TC=–25˚C
100˚C
30
10
0.3 25˚C
3
1
0.1
3
1
0.03
0.3
0.1
0.01
0.01 0.03
0.1
0.3
1
3
10
0.1
0.3
1
3
10
30
0.01 0.03
0.1
0.3
1
3
10
(
A
)
( )
A
( )
Collector current IC A
Collector current IC
Collector current IC
ton, tstg, tf — IC
Area of safe operation (ASO)
100
100
Pulsed tw=1ms
Duty cycle=1%
IC/IB=10 (IB1=–IB2
VCC=50V
Non repetitive pulse
TC=25˚C
30
10
)
30
10
ICP
IC
t=1ms
TC=25˚C
10ms
DC
tstg
3
1
3
1
ton
tf
0.3
0.1
0.3
0.1
0.03
0.01
0.03
0.01
0
1
2
3
4
5
6
7
)
8
1
3
10
30
100 300 1000
(
A
( )
V
Collector current IC
Collector to emitter voltage VCE
2
Power Transistors
2SD2151
Rth(t) — t
10000
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.2A (2W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
1000
100
10
(1)
(2)
1
0.1
10–4
10–3
10–2
10–1
1
10
102
103
104
( )
s
Time
t
3
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