2SC6050 [PANASONIC]

Small Signal Bipolar Transistor, 0.05A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, 0.60 X 1 MM, 0.39 MM HEIGHT, ULTRAMINIATURE, LEADLESS, ML3-N2, 3 PIN;


型号：	2SC6050
厂家：	PANASONIC
描述：	Small Signal Bipolar Transistor, 0.05A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, 0.60 X 1 MM, 0.39 MM HEIGHT, ULTRAMINIATURE, LEADLESS, ML3-N2, 3 PIN 放大器晶体管
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中文：	中文翻译
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Transistors

2SC6050

Silicon NPN epitaxial planar type

For high frequency ampliﬁcation, oscillation and mixing

Unit: mm

 Features



High transition frequency f_T



Small collector output capacitance (Common base, input open circuited) C_ob

and reverse transfer capacitance (Common base) C_rb



Optimum for high-density mounting and downsizing of the equipment for

Ultraminiature leadless package

+0.01

0.39

1.00±0.05

−0.03

0.6 mm

1.0 mm (height 0.39 mm)

0.25±0.05

^0.25±0.051

 Absolute Maximum Ratings T_a= 25

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

Unit

0.65±0.01

0.05±0.03

1: Base

2: Emitter

3: Collector

ML3-N2 Package

Collector power dissipation

Junction temperature

P_C

100

Marking Symbol: 6N

T_j

125

Storage temperature

stg

−

55 to +125

 Electrical Characteristics T_a= 25

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Forward current transfer ratio

V_CEOI_C= 2 mA, I_B= 0

V_EBOI_E= 10 µA, I_C= 0

I_CBO

h_FE

V_CB= 10 V, I_E= 0

µA



V_CE= 4 V, I_C= 5 mA

400

0.5

2.7

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)I_C= 20 mA, I_B= 4 mA

f_T

V_CB= 4 V, I_E

−

5 mA, f = 200 MHz

1.4

1.9

1.4

GHz

Collector output capacitance

C_ob

C_rb

V_CB= 4 V, I_E= 0, f = 1 MHz

(Common base, input open circuited)

Reverse transfer capacitance (Common base)

Collector-base parameter

0.45

r_bb'



c_cV_CB= 4 V, I_E

−

5 mA, f = 31.9 MHz

V_CE= 4 V, I_C= 100 µA/ V_CE= 4 V, I_C

5 mA

h_FEratio

0.75

1.6

∆h_FE



Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: May 2005

SJC00335AED

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

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