2SC5885 [PANASONIC]
Silicon NPN triple diffusion mesa type; 硅NPN三重扩散台面型
| 型号： | 2SC5885 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN triple diffusion mesa type |
| 文件： | 总3页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SC5885
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV, CRT monitor
Unit: mm
9.9 0.3
4.6 0.2
2.9 0.2
I Features
• High breakdown voltage: VCBO ≥ 1500 V
• Wide safe operation area
• Built-in dumper diode
φ
3.2 0.1
0.76 0.06
1.25 0.1
2.6 0.1
1.45 0.15
1.2 0.15
I Absolute Maximum Ratings TC = 25°C
0.7 0.1
0.75 0.1
2.54 0.2
Parameter
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (E-B short) VCES
Emitter-base voltage (Collector open) VEBO
Symbol
Rating
Unit
V
1500
5.08 0.4
1500
V
7°
1
2
3
5
V
1: Base
2: Collector
3: Emitter
Base current
IB
IC
3
A
Collector current
6
A
TO-220H Package
Peak collector current *
Collector power dissipation
ICP
PC
9
A
Marking Symbol: C5885
Internal Connection
30
W
Ta = 25°C
2
Junction temperature
Storage temperature
Tj
150
°C
°C
C
Tstg
−55 to +150
B
Note) : Non-repetitive peak collector current
*
E
I Electrical Characteristics TC = 25°C 3°C
Parameter
Symbol
VEBO
VF
Conditions
Min
Typ
Max
Unit
V
Emitter-base voltage (Collector open)
Forward voltage
IE = 500 mA, IC = 0
5
IF = 3 A
−2
50
1
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 1000 V, IE = 0
VCB = 1500 V, IE = 0
VCE = 5 V, IC = 3 A
µA
mA
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
hFE
5
10
2.5
1.5
VCE(sat) IC = 3 A, IB = 0.75 A
VBE(sat) IC = 3 A, IB = 0.75 A
V
V
fT
tstg
tf
VCE = 10 V, IC = 0.1 A, f = 0.5 MHz
3
MHz
µs
Storage time
IC = 3 A, Resistance loaded
IB1 = 0.75 A, IB2 = −1.5 A
5.0
0.5
Fall time
µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2004
SJD00312AED
1
2SC5885
PC Ta
Safe operation area
Safe operation area (Horizontal operation)
50
40
30
20
10
100
10
1
10
Non repetitive pulse, TC = 25°C
fH = 15.45 kHz, TC < 90°C
(1) TC = Ta
(2) Without heat sink
A.S.O for a single
9
8
7
6
5
4
3
2
1
0
t =
pulse load caused by
EHT flash over during
horizontal operation.
One action of the device must
not use in all areas.
(area A, B and C)
ICP
IC
t
= 100 µs
10 ms
DC
t =
1 ms
But it is able to use in two areas.
(area A and B or area B and C)
(1)
A
B
10−1
10−2
C
(2)
< 1 mA
10−3
0
0
25
50
75
100 125 150
1
10
100
1000
0
500
( )
Collector-emitter voltage VCE V
1000
1500
2000
(
)
Ambient temperature Ta °C
(
)
Collector-emitter voltage VCE
V
SJD00312AED
2
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
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applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
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permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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