2SC5519 [PANASONIC]

Silicon NPN triple diffusion mesa type(For horizontal deflection output); 硅NPN三重扩散台面型（水平偏转输出）


型号：	2SC5519
厂家：	PANASONIC
描述：	Silicon NPN triple diffusion mesa type(For horizontal deflection output) 硅NPN三重扩散台面型（水平偏转输出）
文件：	总2页 (文件大小：37K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Power Transistors

2SC5519

Silicon NPN triple diffusion mesa type

For horizontal deflection output

Unit: mm

15.5±0.5

3.0±0.3

5°

φ3.2±0.1

Features

■

5°

●

High breakdown voltage, and high reliability through the use of a

glass passivation layer

●

High-speed switching

5°

●

Wide area of safe operation (ASO)

5°

4.0

2.0±0.2

1.1±0.1

Absolute Maximum Ratings (T =25˚C)

■

0.7±0.1

Parameter

Symbol

V_CBO

V_CES

V_EBO

I_CP

Ratings

Unit

5.45±0.3

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

1700

5°

1:Base

2:Collector

3:Emitter

I_C

Base current

I_B

TOP–3E Full Pack Package

Collector power T_C=25°C

P_C

dissipation

Ta=25°C

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

µA

V_CB= 1000V, I_E= 0

Collector cutoff current

V_CB= 1700V, I_E= 0

I_E= 500mA, I_C= 0

V_CE= 5V, I_C= 6A

I_C= 6A, I_B= 1.2A

Emitter to base voltage

V_EBO

h_FE

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

1.5

Transition frequency

Storage time

f_T

V_CE= 10V, I_C= 0.1A, f = 0.5MHz

I_C= 6A, I_B1= 1.2A, I_B2= –2.4A

I_F= 6A

MHz

µs

t_stg

t_f

5.0

0.5

–2

Fall time

µs

Diode forward voltage

V_F

Power Transistors

2SC5519

P_C— Ta

Area of safe operation, horizontal operation ASO

100

(1) T_C=Ta

(2) With a 100 × 100 × 2mm

Al heat sink

(3) Without heat sink

f=15.75kHz, T_C<90˚C

Area of safe operation with

respect to the single pulse

overload curve at the time of

switching ON, shutting down

by the high voltage spark,

holding down and like that,

during horizontal operation.

(1)

(2)

(3)

<1mA

20 40 60 80 100 120 140 160

500

1000

1500

2000

(

)

( )

Collector to emitter voltage V_CEV

Ambient temperature Ta ˚C

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