2SC5515 [PANASONIC]

Silicon NPN triple diffusion mesa type(For horizontal deflection output); 硅NPN三重扩散台面型（水平偏转输出）


型号：	2SC5515
厂家：	PANASONIC
描述：	Silicon NPN triple diffusion mesa type(For horizontal deflection output) 硅NPN三重扩散台面型（水平偏转输出）晶体晶体管功率双极晶体管开关局域网
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Power Transistors

2SC5515

Silicon NPN triple diffusion mesa type

For horizontal deflection output

Unit: mm

15.5±0.5

3.0±0.3

5°

φ3.2±0.1

Features

■

5°

●

High breakdown voltage, and high reliability through the use of a

glass passivation layer

●

High-speed switching

5°

●

Wide area of safe operation (ASO)

5°

4.0

2.0±0.2

1.1±0.1

Absolute Maximum Ratings (T =25˚C)

■

0.7±0.1

Parameter

Symbol

V_CBO

V_CES

V_CEO

V_EBO

I_CP

Ratings

Unit

5.45±0.3

Collector to base voltage

1500

5°

Collector to emitter voltage

600

Emitter to base voltage

Peak collector current

Collector current

1:Base

2:Collector

3:Emitter

I_C

TOP–3E Full Pack Package

Base current

I_B

Collector power T_C=25°C

P_C

dissipation

Ta=25°C

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

µA

_CB= 1000V, I_E= 0

Collector cutoff current

V_CB= 1500V, I_E= 0

V_EB= 5V, I_C= 0

µA

Emitter cutoff current

I_EBO

h_FE

Forward current transfer ratio

V_CE= 5V, I_C= 8.5A

I_C= 8.5A, I_B= 2.13A

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

1.5

Transition frequency

Storage time

f_T

t_stg

t_f

V_CE= 10V, I_C= 0.1A, f = 0.5MHz

MHz

µs

2.7

0.2

I_C= 8.5A, I_B1= 2.13A, I_B2= –4.25A

Fall time

µs

Power Transistors

2SC5515

P_C— Ta

Area of safe operation, horizontal operation ASO

100

(1) T_C=Ta

(2) With a 100 × 100 × 2mm

Al heat sink

(3) Without heat sink

f=64kHz, T_C<90˚C

Area of safe operation with

respect to the single pulse

overload curve at the time of

switching ON, shutting down

by the high voltage spark,

holding down and like that,

during horizontal operation.

(1)

(2)

(3)

<1mA

20 40 60 80 100 120 140 160

500

1000

1500

2000

(

)

( )

Collector to emitter voltage V_CEV

Ambient temperature Ta ˚C

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