2SC5457 [PANASONIC]
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching); 硅NPN三重扩散平面类型（高击穿电压高速开关）
| 型号： | 2SC5457 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
| 文件： | 总2页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SC5457
Silicon NPN triple diffusion planar type
Unit: mm
6.5±0.1
5.3±0.1
4.35±0.1
2.3±0.1
For high breakdown voltage high-speed switching
0.5±0.1
Features
High-speed switching
■
1.0±0.1
0.1±0.05
0.93±0.1
●
0.5±0.1
0.75±0.1
●
High collector to base voltage VCBO
2.3±0.1
4.6±0.1
●
Wide area of safe operation (ASO)
●
Satisfactory linearity of foward current transfer ratio hFE
1:Base
2:Collector
3:Emitter
U Type Package
1
2
3
Absolute Maximum Ratings (T =25˚C)
■
C
Unit: mm
Parameter
Symbol
VCBO
VCES
VCEO
VEBO
ICP
Ratings
Unit
V
6.5±0.2
5.35
4.35
Collector to base voltage
500
500
V
Collector to emitter voltage
400
V
Emitter to base voltage
Peak collector current
Collector current
7
V
0.75
0.6
6
A
2.3 2.3
IC
3
1.2
A
Base current
IB
A
0.5±0.1
Collector power TC=25°C
30
PC
W
1:Base
2:Collector
3:Emitter
EIAJ:SC–63
U Type Package (Z)
dissipation
Ta=25°C
1.0
1
2
3
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
100
100
Unit
µA
µA
V
Collector cutoff current
Emitter cutoff current
VCB = 500V, IE = 0
IEBO
VCEO
hFE1
hFE2
VEB = 5V, IC = 0
Collector to emitter voltage
IC = 10mA, IB = 0
400
10
8
VCE = 5V, IC = 0.1A
VCE = 2V, IC = 1.2A
IC = 1.5A, IB = 0.3A
IC = 1.5A, IB = 0.3A
VCE = 10V, IC = 0.2A, f = 1MHz
Forward current transfer ratio
40
1.0
1.5
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
V
V
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
10
MHz
µs
1.0
3.0
0.3
IC = 1.5A, IB1 = 0.15A, IB2 = – 0.3A,
VCC = 200V
µs
µs
1
Power Transistors
2SC5457
PC — Ta
Area of safe operation (ASO)
50
100
Non repetitive pulse
TC=25˚C
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(PC=4.5W)
(3) Without heat sink
(PC=1.0W)
30
10
40
30
20
10
0
ICP
IC
t=100µs
(1)
3
1
1ms
10ms
DC
0.3
0.1
(2)
(3)
0.03
0.01
0
20 40 60 80 100 120 140 160
1
3
10
30
100 300 1000
(
)
( )
Collector to emitter voltage VCE V
Ambient temperature Ta ˚C
2
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