2SC3824TX [PANASONIC]

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2SC3824TX
型号: 2SC3824TX
厂家: PANASONIC    PANASONIC
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晶体 晶体管 功率双极晶体管 开关 光电二极管
文件: 总4页 (文件大小:100K)
中文:  中文翻译
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Power Transistors  
2SC3824, 2SC3824A  
Silicon NPN triple diffusion planar type  
For high breakdown voltage high-speed switching  
Unit: mm  
7.0 0.3  
3.5 0.2  
0˚ to 0.15˚  
3.0 0.2  
2.0 0.2  
Features  
High-speed switching  
High collector-base voltage (Emitter open) VCBO  
I type package enabling direct soldering of the radiating fin to the  
printed circuit board, etc. of small electronic equipment  
1.1 0.1  
0.75 0.1 0.4 0.1  
0.9 0.1  
0˚ to 0.15˚  
2.3 0.2  
Absolute Maximum Ratings TC = 25°C  
4.6 0.4  
2
Parameter  
Symbol  
Rating  
Unit  
V
1
3
Collector-base voltage (Emitter open) VCBO  
900  
Collector-emitter voltage (E-B short)  
VCES  
VCEO  
900  
V
2SC3824  
800  
V
Collector-emitter voltage  
(Base open)  
1: Base  
2: Collector  
3: Emitter  
I-G1 Package  
2SC3824A  
900  
Emitter-base voltage (Collector open) VEBO  
7
V
A
Collector current  
Peak collector current  
Collector power  
IC  
ICP  
PC  
1
Note) Self-supported type package is also prepared.  
2
15  
A
W
dissipation  
Ta = 25°C  
1.3  
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
55 to +150  
Electrical Characteristics TC = 25°C 3°C  
Parameter  
Symbol  
Conditions  
Min  
800  
900  
Typ  
Max  
Unit  
2SC3824  
VCEO  
IC = 1 mA, IB = 0  
V
Collector-emitter voltage  
(Base open)  
2SC3824A  
Collector-base cutoff current (Emitter open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
ICBO  
IEBO  
hFE1  
hFE2  
VCB = 900 V, IE = 0  
VEB = 7 V, IC = 0  
50  
50  
µA  
µA  
VCE = 5 V, IC = 0.05 A  
VCE = 5 V, IC = 0.5 A  
6
3
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
Turn-on time  
VCE(sat) IC = 0.2 A, IB = 0.04 A  
VBE(sat) IC = 0.2 A, IB = 0.04 A  
1.5  
1.0  
V
V
fT  
ton  
tstg  
tf  
VCE = 10 V, IC = 0.05 A, f = 1 MHz  
4
MHz  
µs  
IC = 0.2 A  
1.0  
3.0  
1.0  
Storage time  
IB1 = 0.04 A, IB2 = − 0.08 A  
VCC = 250 V  
µs  
Fall time  
µs  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: March 2003  
SJD00113AED  
1
2SC3824, 2SC3824A  
PC Ta  
IC VCE  
VCE(sat) IC  
20  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
TC=100˚C  
TC=25˚C  
100mA  
IC/IB=5  
(1)TC=Ta  
(3)Without heat sink  
(PC=1.3W)  
IB=200mA  
25˚C  
(1)  
15  
1
90mA  
80mA  
70mA  
–25˚C  
10  
5
60mA  
50mA  
0.1  
40mA  
30mA  
20mA  
10mA  
(2)  
0.01  
0
0.01  
0.1  
1
0
40  
80  
120  
160  
0
2
4
6
8
10  
12  
Collector current IC (A)  
Ambient temperature Ta (°C)  
Collector-emitter voltage VCE (V)  
VBE(sat) IC  
hFE IC  
fT IC  
1000  
100  
10  
VCE=10V  
f=1MHz  
TC=25˚C  
VCE=5V  
IC/IB=5  
100  
10  
1
25˚C  
25˚C  
1
TC=–25˚C  
TC=100˚C  
100˚C  
–25˚C  
0.1  
1
0.1  
0.01  
0.1  
0.01  
0.01  
0.1  
1
103  
102  
101  
1
0.1  
1
Collector current IC (A)  
Collector current IC (A)  
Collector current IC (A)  
ton , tstg , tf IC  
Safe operation area  
10  
100  
Non repetitive pulse  
TC=25˚C  
Pulsed tw=1ms  
Duty cycle=1%  
IC/IB=5  
ICP  
IC  
(2IB1=–IB2  
)
t=10ms  
t=1ms  
VCC=250V  
1
101  
102  
103  
10  
1
TC=25˚C  
t=300ms  
tstg  
ton  
tf  
0.1  
0.01  
1
10  
100  
1000  
0
0.2  
0.4  
0.6  
0.8  
1.0  
Collector current IC (A)  
Collector-emitter voltage VCE (V)  
SJD00113AED  
2
2SC3824, 2SC3824A  
Safe operation area (Reverse bias)  
4
Safe operation area (Reverse bias) measurement circuit  
L=100µH  
IC/IB=5  
(2IB1=–IB2  
)
TC=25˚C  
L
3
2
1
0
T.U.T  
IC  
IB1  
ICP  
VIN  
IB2  
VCC  
IC  
VCLAMP  
tw  
0
400  
800  
1200  
1600  
Collector-emitter voltage VCE (V)  
Rth t  
103  
102  
10  
(1)Without heat sink  
(2)With a 50×50×2mm Al heat sink  
(1)  
(2)  
1
101  
103  
102  
101  
1
10  
102  
103  
Time t (s)  
SJD00113AED  
3
Request for your special attention and precautions in using the technical information  
and semiconductors described in this material  
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government  
if any of the products or technologies described in this material and controlled under the "Foreign  
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.  
(2) The technical information described in this material is limited to showing representative characteris-  
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-  
tual property right or any other rights owned by our company or a third party, nor grants any license.  
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the  
product or technologies as described in this material.  
(4) The products described in this material are intended to be used for standard applications or general  
electronic equipment (such as office equipment, communications equipment, measuring instru-  
ments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,  
combustion equipment, life support systems and safety devices) in which exceptional quality and  
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or  
harm the human body.  
Any applications other than the standard applications intended.  
(5) The products and product specifications described in this material are subject to change without  
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of  
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that  
the latest specifications satisfy your requirements.  
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-  
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-  
wise, we will not be liable for any defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of  
incidence of break down and failure mode, possible to occur to semiconductor products. Measures  
on the systems such as redundant design, arresting the spread of fire or preventing glitch are  
recommended in order to prevent physical injury, fire, social damages, for example, by using the  
products.  
(7) When using products for which damp-proof packing is required, observe the conditions (including  
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets  
are individually exchanged.  
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written  
permission of Matsushita Electric Industrial Co., Ltd.  
2002 JUL  

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