2SC3526(H) [PANASONIC]
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | TO-92 ; 晶体管| BJT | NPN | 50V V（ BR ） CEO | 150MA I（C ） | TO- 92\n
| 型号： | 2SC3526(H) |
| 厂家： | 
PANASONIC |
| 描述： | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | TO-92
|
| 文件： | 总2页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistor
2SC3526(H)
Silicon NPN epitaxial planer type
For display video output
Unit: mm
5.9±0.2
4.9±0.2
Features
High transition frequency fT.
■
●
●
Small collector output capacitance Cob.
●
Wide current range.
0.7±0.1
2.54±0.15
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Symbol
Ratings
110
Unit
V
VCBO
*
0.45+–00..12
0.45+–00..12
VCER
100
V
1.27
1.27
VCEO
VEBO
ICP
50
V
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
3.5
V
1
2
3
300
mA
mA
W
IC
150
Collector power dissipation
Junction temperature
Storage temperature
*REB = 470Ω
PC
1.0
Tj
150
˚C
˚C
Tstg
–55 ~ +150
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICEO
Conditions
min
typ
max
Unit
µA
V
Collector cutoff current
VCE = 35V, IB = 0
10
Collector to base voltage
Collector to emitter voltage
Collector to emitter voltage
Emitter to base voltage
VCBO
VCER
VCEO
VEBO
hFE
IC = 100µA, IE = 0
110
100
50
IC = 500µA, RBE = 470Ω
IC = 1mA, IB = 0
V
V
IE = 100µA, IC = 0
3.5
20
V
Forward current transfer ratio
VCE = 5V, IC = 100mA*
IC = 150mA, IB = 15mA*
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = –110mA, f = 200MHz
VCB = 30V, IE = 0, f = 1MHz
Collector to emitter saturation voltage VCE(sat)
0.5
V
fT1
300
350
3
MHz
MHz
pF
Transition frequency
fT2
Collector output capacitance
* Pulse measurement
Cob
1
Transistor
2SC3526(H)
PC — Ta
IC — VCE
IC — VBE
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
240
200
160
120
80
120
100
80
60
40
20
0
Ta=25˚C
VCE=5V
25˚C
IB=5.0mA
4.5mA
Ta=75˚C
–25˚C
4.0mA
3.5mA
3.0mA
2.5mA
2.0mA
1.5mA
40
1.0mA
0.5mA
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0
0.2
0.4
0.6
0.8
1.0
(
)
( )
V
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IE
100
120
600
500
400
300
200
100
0
IC/IB=10
VCE=5V
VCB=10V
Ta=25˚C
30
10
100
80
60
40
20
0
3
1
Ta=75˚C
Ta=75˚C
0.3
0.1
25˚C
25˚C
–25˚C
–25˚C
0.03
0.01
1
3
10
30
100 300 1000
0.1
0.3
1
3
10
30
100
–1
–3
–10 –30 –100 –300 –1000
(
)
(
)
(
)
Collector current IC mA
Collector current IC mA
Emitter current IE mA
Cob — VCB
6
5
4
3
2
1
0
IE=0
f=1MHz
Ta=25˚C
1
3
10
30
100
( )
V
Collector to base voltage VCB
2
相关型号：
2SC3526H|2SC3526(H
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
ETC
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