2SB1499AP [PANASONIC]
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, MT4, 3 PIN;
| 型号： | 2SB1499AP |
| 厂家： | 
PANASONIC |
| 描述： | Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, MT4, 3 PIN |
| 文件： | 总3页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SB1499, 2SB1499A
Silicon PNP epitaxial planar type
For low-freauency power amplification
Unit: mm
Features
■
●
High forward current transfer ratio hFE which has satisfactory linearity
●
Low collector to emitter saturation voltage VCE(sat)
5.0±0.1
●
Allowing automatic insertion with radial taping
10.0±0
1.0
Absolute Maximum Ratings (T =25˚C)
■
C
90°
Parameter
Symbol
Ratings
Unit
C1.0
Collector to
2SB1499
2SB1499A
2SB1499
–60
2.25±0.2
VCBO
V
65±0.
1.05±0.1
base voltage
Collector to
–80
0.35±0
–60
VCEO
V
0.55±0.1
5±0.1
emitter voltage 2SB1499A
Emitter to base voltage
Peak collector current
Collector current
–80
VEBO
ICP
–5
A
A
1.0
–8
1
2 3
IC
–4
2.5±0.2
2.5±0.2
Collector power TC=25°C
1:Base
PC
W
2:Collector
3:Emitter
MT4 Type Package
dissipation
Ta=25°C
2
Junction temperature
Storage temperature
Tj
150
˚C
Tstg
5 to +150
Electrical Characeristcs (T =25˚C)
■
C
Parameter
Collectutoff
Symbol
ICES
Condition
min
typ
max
–400
–400
–700
–700
–1
Unit
1499
B1499A
2S1499
2SB149A
CE = –60V, VBE = 0
µA
current
CE = –80V, VBE = 0
VCE = –30V, IB = 0
VCE = –60V, IB = 0
VEB = –5V, IC = 0
llector ctoff
crent
CEO
IEBO
VCEO
µA
mA
V
Emittcutoff cu
Collector to e
voltage 9A
–60
–80
70
IC = –30mA, IB = 0
*
hFE1
VCE = –4V, IC = –1A
250
Forward current transfer ratio
Base to emitter voltage
hFE2
VBE
VCE = –4V, IC = –3A
15
VCE = –4V, IC = –3A
–2
V
V
Collector to emitter saturation voltage VCE(sat)
IC = –4A, IB = – 0.4A
–1.5
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
VCE = –10V, IC = – 0.1A, f = 10MHz
30
0.2
0.5
0.2
MHz
µs
IC = –4A, IB1 = – 0.4A, IB2 = 0.4A
µs
µs
*hFE1 Rank classification
Rank
hFE1
Q
P
70 to 150
120 to 250
1
Power Transistors
2SB1499, 2SB1499A
PC — Ta
IC — VCE
IC — VBE
20
–6
–5
–4
–3
–2
–1
0
–10
TC=25˚C
VCE=–4V
IB=–120mA
(1) TC=Ta
(2) Without heat sink
(PC=2.0W)
–100mA
–80mA
–60mA
–8
–
–4
–2
0
15
10
5
25˚C
–25˚C
TC=100˚C
(1)
–40mA
–20mA
–10mA
–8mA
–5A
(2)
0
0
20 40 60 80 100 120 140 160
0
–2
–4
–6
–8
10 2
0
– 0.4
–1.6
–2.0
(
)
( )
V
( )
Base to emge VBE V
Ambient temperature Ta ˚C
Collector to emitter voltge VC
VCE(sat) — IC
FE —
fT — IC
–100
10000
10000
IC/IB=10
VCE=–4V
VCE=–5V
f=10MHz
TC=25˚C
–30
–10
3000
300
1000
0
5˚C
–3
–1
00
300
100
C=100˚C
–25˚
25˚C
TC=100˚C
– 0.3
– 0.1
30
10
30
10
25˚C
– 0.03
– 0.01
3
1
3
1
– 0.0– 3 – 0.1
1
–3
–10
– 0.0– 0.03 – 0.1 – 0.3
–1
–3
10
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
( )
A
( )
( )
Collector current IC A
Colctor cIC
Collector current IC
Area of safe operation ASO)
Rth(t) — t
–100
10000
1000
100
10
ve pul
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) Without heat sink
–30
–10
(2) With a 50 × 50 × 2mm Al heat sink
ICP
t=1s
IC
–3
–1
(1)
(2)
10ms
DC
– 0.3
– 0.1
1
– 0.03
– 0.01
0.1
–1
–3
–10 –30 –100 –300 –1000
10–4
10–3
10–2
10–1
1
10
102
103
104
( )
V
( )
s
Collector to emitter voltage VCE
Time
t
2
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
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– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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