Q65110A2091 [OSRAM]
IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung; IR- Lumineszenzdiode （ 850纳米），麻省理工学院达赫Ausgangsleistung
| 型号： | Q65110A2091 |
| 厂家： | 
OSRAM GMBH |
| 描述： | IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung |
| 文件： | 总8页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung
High Power Infrared Emitter (850 nm)
Lead (Pb) Free Product - RoHS Compliant
SFH 4350
Features
Wesentliche Merkmale
• High Power Infrared LED
• Emission angle ± 13°
• Very high radiant intensity
• Short switching times
• UL version available
• Infrarot LED mit hoher Ausgangsleistung
• Abstrahlwinkel ± 13°
• Sehr hohe Strahlstärke
• Kurze Schaltzeiten
• UL Version erhältlich
Applications
Anwendungen
• Infrared Illumination for cameras
• Sensor technology
• Infrarotbeleuchtung für Kameras
• Sensorik
• Data transmission
• Smoke detectors
• Datenübertragung
• Rauchmelder
Safety Advices
Sicherheitshinweise
Depending on the mode of operation, these
devices emit highly concentrated non visible
infrared light which can be hazardous to the
human eye. Products which incorporate these
devices have to follow the safety precautions
given in IEC 60825-1 and IEC 62471.
Je nach Betriebsart emittieren diese Bauteile
hochkonzentrierte, nicht sichtbare Infrarot-
Strahlung, die gefährlich für das menschliche
Auge sein kann. Produkte, die diese Bauteile
enthalten, müssen gemäß den Sicherheits-
richtlinien der IEC-Normen 60825-1 und 62471
behandelt werden.
Typ
Type
Bestellnummer
Ordering Code
Strahlstärkegruppierung1) (IF = 100 mA, tp = 20 ms)
Radiant Intensity Grouping1)
Ie (mW/sr)
SFH 4350
Q65110A2091
≥ 40 (typ. 110)
1) gemessen bei einem Raumwinkel Ω = 0.01 sr / measured at a solid angle of Ω = 0.01 sr
2009-08-21
1
SFH 4350
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Top , Tstg
– 40 … + 100
°C
Operating and storage temperature range
Sperrspannung
Reverse voltage
VR
5
V
Vorwärtsgleichstrom
Forward current
IF
100
1.5
180
450
mA
A
Stoßstrom, tp = 10 μs, D = 0
Surge current
IFSM
Ptot
Verlustleistung
Power dissipation
mW
K/W
Wärmewiderstand Sperrschicht - Umgebung bei RthJA
Montage auf FR4 Platine, Padgröße je 16 mm2
Thermal resistance junction - ambient mounted
on PC-board (FR4), padsize 16 mm2 each
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 100 mA
λpeak
860
850
42
nm
nm
nm
Centroid-Wellenlänge der Strahlung
Centroid wavelength
IF = 100 mA
λcentroid
Spektrale Bandbreite bei 50% von Imax
Spectral bandwidth at 50% of Imax
IF = 100 mA
Δλ
Abstrahlwinkel
Half angle
ϕ
± 13
Grad
deg.
Aktive Chipfläche
Active chip area
0.09
mm2
A
Abmessungen der aktiven Chipfläche
Dimension of the active chip area
L × B
L × W
0.3 × 0.3
mm²
2009-08-21
2
SFH 4350
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Schaltzeiten, Ie von 10% auf 90% und von 90% tr, tf
auf 10%, bei IF = 100 mA, RL = 50 Ω
12
ns
Switching times, Ιe from 10% to 90% and from
90% to 10%, IF = 100 mA, RL = 50 Ω
Durchlassspannung
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
VF
VF
1.5 (< 1.8)
2.4 (< 3.0)
V
V
Sperrstrom
Reverse current
IR
not designed for μA
reverse
operation
Gesamtstrahlungsfluss
Total radiant flux
IF = 100 mA, tp = 20 ms
Φe typ
TCI
50
mW
Temperaturkoeffizient von Ie bzw. Φe,
IF = 100 mA
– 0.5
%/K
Temperature coefficient of Ie or Φe, IF = 100 mA
Temperaturkoeffizient von VF, IF = 100 mA
Temperature coefficient of VF, IF = 100 mA
TCV
TCλ
– 0.7
+ 0.3
mV/K
nm/K
Temperaturkoeffizient von λ, IF = 100 mA
Temperature coefficient of λ, IF = 100 mA
2009-08-21
3
SFH 4350
Strahlstärke Ie in Achsrichtung1)
gemessen bei einem Raumwinkel Ω = 0.01 sr
Radiant Intensity Ie in Axial Direction
at a solid angle of Ω = 0.01 sr
Bezeichnung
Parameter
Symbol
Werte
Values
Einheit
Unit
SFH 4350
-U
SFH 4350
-V
SFH 4350
-AW
SFH 4350
-BW
Strahlstärke
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie min
Ie max
40
80
63
125
100
200
160
320
mW/sr
mW/sr
Strahlstärke
Ie typ
500
700
900
1100
mW/sr
Radiant intensity
IF = 1 A, tp = 100 μs
1) Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) /
Only one group in one packing unit (variation lower 2:1)
Abstrahlcharakteristik
Radiation Characteristics Irel = f (ϕ)
40˚
30˚
20˚
10˚
0˚
OHF02499
1.0
50˚
0.8
0.6
0.4
60˚
70˚
0.2
0
80˚
90˚
100˚
1.0
0.8
0.6
0.4
0˚
20˚
40˚
60˚
80˚
100˚
120˚
2009-08-21
4
SFH 4350
Ie
= f (IF)
Relative Spectral Emission
Irel = f (λ)
Radiant Intensity
Max. Permissible Forward Current
IF = f (TA), RthJA = 450 K/W
Ie 100 mA
Single pulse, tp = 20 μs
OHR00880
125
OHF04135
OHL01715
101
100
%
Ι F mA
Ie
Irel
Ie (100 mA)
100
80
60
40
20
0
100
5
75
50
25
0
10-1
5
10-2
5
10-3
100
5
101
5
102
103
mA
0
20
40
60
80 ˚C 100
700
750
800
850
nm 950
IF
T
λ
Forward Current IF = f (VF)
Single pulse, tp = 20 μs
Permissible Pulse Handling
Capability IF = f (τ), TA = 25 °C,
duty cycle D = parameter
OHF02505
1.6
A
tP
OHL01713
100
tP
IF
IF
D
= T
A
1.4
IF
T
1.2
1.0
0.8
0.6
0.4
0.2
0
10-1
5
D
=
0.005
0.01
0.02
0.033
0.05
0.1
10-2
5
0.2
0.5
1
10-3
5
10-4
0
0.5
1
1.5
2
2.5 V 3
VF
10-5 10-4 10-3 10-2 10-1 100 101 s 102
tp
2009-08-21
5
SFH 4350
Maßzeichnung
Package Outlines
5.2 (0.205)
4.5 (0.177)
4.1 (0.161)
3.9 (0.154)
Surface
not flat
0.6 (0.024)
0.4 (0.016)
2
1
4.0 (0.157)
3.6 (0.142)
Chip position
3.3 (0.130)
6.3 (0.248)
5.9 (0.232)
1.8 (0.071)
1.2 (0.047)
GEMY6689
Maße in mm (inch) / Dimensions in mm (inch).
Gehäuse / Package
3 mm, klares Gehäuse / 1/10", clear package
Anschlussbelegung
Pin configuration
1 = Anode / anode
2 = Kathode / cathode
Empfohlenes Lötpaddesign
Wellenlöten TTW
TTW Soldering
Recommended Solder Pad Design
Anode
4 (0.157)
OHLPY985
Maße in mm (inch) / Dimensions in mm (inch).
2009-08-21
6
SFH 4350
Lötbedingungen
Soldering Conditions
Wellenlöten (TTW)
TTW Soldering
(nach CECC 00802)
(acc. to CECC 00802)
OHLY0598
300
C
10 s
Normalkurve
standard curve
250
200
150
100
50
T
235 C ... 260 C
Grenzkurven
limit curves
2. Welle
2. wave
1. Welle
1. wave
ca 200 K/s
2 K/s
5 K/s
100 C ... 130 C
Zwangskühlung
forced cooling
2 K/s
0
0
50
100
150
200
s
250
t
Published by
OSRAM Opto Semiconductors GmbH
Leibnizstraße 4, D-93055 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2009-08-21
7
Mouser Electronics
Related Product Links
720-SFH4350 - Osram Opto Semiconductor SFH 4350
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