UESDXXDT5G [ONSEMI]

ESD Protection Diodes; ESD保护二极管


型号：	UESDXXDT5G
厂家：	ONSEMI
描述：	ESD Protection Diodes ESD保护二极管二极管
文件：	总4页 (文件大小：58K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

mESD3.3DT5G SERIES

ESD Protection Diodes

In Ultra Small SOT−723 Package

The mESD Series is designed to protect voltage sensitive components

from ESD. Excellent clamping capability, low leakage, and fast response

time, make these parts ideal for ESD protection on designs where board

space is at a premium. Because of its small size, it is suited for use in

cellular phones, portable devices, digital cameras, power supplies and

many other portable applications.

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PIN 1. CATHODE

2. CATHODE

3. ANODE

Specification Features:

• Small Body Outline Dimensions:

0.047″ x 0.032″ (1.20 mm x 0.80 mm)

• Low Body Height: 0.020″ (0.5 mm)

• Stand−off Voltage: 3.3 V − 6.0 V

• Low Leakage

MARKING

DIAGRAM

• Response Time is Typically < 1 ns

• ESD Rating of Class 3 (> 16 kV) per Human Body Model

• IEC61000−4−2 Level 4 ESD Protection

• IEC61000−4−4 Level 4 EFT Protection

• These are Pb−Free Devices

xx M

SOT−723

CASE 631AA

STYLE 4

xx = Device Code

= Date Code

Mechanical Characteristics:

CASE: Void-free, transfer-molded, thermosetting plastic

Epoxy Meets UL 94 V−0

LEAD FINISH: 100% Matte Sn (Tin)

MOUNTING POSITION: Any

QUALIFIED MAX REFLOW TEMPERATURE: 260°C

Device Meets MSL 1 Requirements

ORDERING INFORMATION

†

Device

mESDxxDT5G

Package

Shipping

SOT−723 8000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MAXIMUM RATINGS

Rating

IEC 61000−4−2 (ESD)

Symbol

Value

Unit

Air

Contact

DEVICE MARKING INFORMATION

IEC 61000−4−4 (EFT)

See specific marking information in the device marking

column of the table on page 2 of this data sheet.

ESD Voltage

Per Human Body Model

Per Machine Model

400

Total Power Dissipation on FR−5 Board

⎪

mW/°C

°C/W

(Note 1) @ T = 25°C

240

1.9

525

Derate above 25°C

Thermal Resistance Junction−to−Ambient

Junction and Storage Temperature Range

T , T

−55 to

+150

°C

stg

Lead Solder Temperature − Maximum

(10 Second Duration)

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 x 0.75 x 0.62 in.

Publication Order Number:

October, 2006 − Rev. 1

mESD3.3DT5G/D

mESD3.3DT5G SERIES

ELECTRICAL CHARACTERISTICS

(T = 25°C unless otherwise noted)

Symbol

Parameter

Maximum Reverse Peak Pulse Current

Clamping Voltage @ I

RWM

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ V

BR RWM

RWM

Breakdown Voltage @ I

Test Current

Forward Current

Forward Voltage @ I

Peak Power Dissipation

Max. Capacitance @V = 0 and f = 1 MHz

Uni−Directional TVS

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 0.9 V Max. @ I = 10 mA for all types)

(V) @ I

(Note 2)

(V)

(mA) @ V

Max

1.0

C (pF)

Typ

RWM

Device

Marking

Max

3.3

5.0

6.0

Min

1.0

Device*

mESD3.3DT5G

5.0

mESD5.0DT5G

mESD6.0DT5G

0.1

6.2

0.1

7.0

*Other voltages available upon request.

2. V is measured with a pulse test current I at an ambient temperature of 25°C.

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mESD3.3DT5G SERIES

TYPICAL CHARACTERISTICS

7.4

7.3

7.2

7.1

7.0

6.9

6.8

6.7

6.6

6.5

6.4

6.3

mESDxxDT5G

−55

+25

+150

+25

+150

TEMPERATURE (°C)

Figure 1. Typical Breakdown Voltage

versus Temperature

Figure 2. Typical Leakage Current

versus Temperature

300

250

200

mESDxxDT5G

150

100

FR−5 BOARD

100

125

150

175

BIAS VOLTAGE (V)

TEMPERATURE (°C)

Figure 3. Typical Capacitance versus Bias Voltage

Figure 4. Steady State Power Derating Curve

Figure 5. Positive 8 kV contact per IEC 6100−4−2

Figure 6. Negative 8 kV contact per IEC 61000−4−2

− mESD5.0DT5G

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mESD3.3DT5G SERIES

PACKAGE DIMENSIONS

SOT−723

CASE 631AA−01

ISSUE A

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

−X−

−Y−

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS OR GATE BURRS.

H_E

MILLIMETERS

INCHES

NOM MAX

0.018 0.020 0.022

DIM MIN

NOM

0.50

0.20

0.3

0.12

MAX

0.55

0.27 0.0059 0.0079 0.0106

0.35 0.010 0.012 0.014

0.17 0.0028 0.0047 0.0067

MIN

b 2X

H E

0.45

0.15

0.25

0.07

1.15

0.75

0.08 (0.0032) X Y

1.20

0.80

1.25

0.85

0.045 0.047 0.049

0.03 0.032 0.034

0.016 BSC

0.40 BSC

1.20

0.20

1.15

0.15

1.25

0.045 0.047 0.049

0.25 0.0059 0.0079 0.0098

STYLE 4:

PIN 1. CATHODE

2. CATHODE

3. ANODE

SOLDER FOOTPRINT*

0.40

0.0157

0.40

0.0157

1.0

0.039

0.40

0.0157

0.40

0.0157

0.40

0.0157

inches

SCALE 20:1

SOT−723

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5773−3850

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

mESD3.3DT5G/D

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UESDXXDT5G [ONSEMI]

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