TIP32ATU [ONSEMI]
PNP Bipolar Power Transistor;型号: | TIP32ATU |
厂家: | ONSEMI |
描述: | PNP Bipolar Power Transistor |
文件: | 总6页 (文件大小:349K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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TIP32 / TIP32A / TIP32C
PNP Epitaxial Silicon Transistor
Features
• Medium Power Linear Switching Applications
• Complementary to TIP31 Series
TO-220
1.Base 2.Collector 3.Emitter
1
Ordering Information
Part Number
TIP32
Top Mark
TIP32
Package
Packing Method
TO-220 3L (Single Gauge)
TO-220 3L (Single Gauge)
TO-220 3L (Single Gauge)
TO-220 3L (Single Gauge)
TO-220 3L (Single Gauge)
Bulk
Bulk
Rail
Bulk
Rail
TIP32A
TIP32A
TIP32A
TIP32C
TIP32C
TIP32ATU
TIP32C
TIP32CTU
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Value
-40
Unit
TIP32
VCBO
Collector-Base Voltage
Collector-Emitter Voltage
TIP32A
TIP32C
TIP32
-60
V
-100
-40
VCEO
TIP32A
TIP32C
-60
V
-100
-5
VEBO
IC
ICP
IB
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
V
A
-3
-5
A
-3
A
TJ
Junction Temperature
150
-65 to 150
°C
°C
TSTG
Storage Temperature Range
Publication Order Number:
TIP32C/D
© 2000 Semiconductor Components Industries, LLC.
November-2017,Rev. 2
Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
Collector Dissipation (TA = 25°C)
Collector Dissipation (TC = 25°C)
2
PC
W
40
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
-40
Max.
Unit
TIP32
Collector-Emitter Sustaining
Voltage(1)
VCEO(sus)
TIP32A
TIP32C
IC = -30 mA, IB = 0
-60
V
-100
TIP32 /
TIP32A
V
CE = -30 V, IB = 0
-0.3
ICEO
Collector Cut-Off Current
Collector Cut-Off Current
mA
TIP32C
TIP32
VCE = -60 V, IB = 0
CE = -40 V, VEB = 0
-0.3
-200
-200
-200
-1
V
ICES
TIP32A
TIP32C
VCE = -60 V, VEB = 0
VCE = -100 V, VEB = 0
VEB = -5 V, IC = 0
μA
IEBO
hFE
Emitter Cut-Off Current
DC Current Gain(1)
mA
VCE = -4 V, IC = -1 A
25
10
VCE = -4 V, IC =- 3 A
50
VCE(sat) Collector-Emitter Saturation Voltage(1) IC = -3 A, IB = -375 mA
-1.2
-1.8
V
V
VBE(on)
Base-Emitter On Voltage(1)
VCE = -4 V, IC = -3 A
VCE = -10 V, IC = -500 mA,
f = 1 MHz
fT
Current Gain Bandwidth Product
3.0
MHz
Note:
1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.
www.onsemi.com
2
Typical Performance Characteristics
1000
-10000
-1000
-100
VCE = -4V
IC/IB = 10
100
10
1
VBE(sat)
VCE(sat)
-10
-1
-10
-100
-1000
-10000
-1
-10
-100
-1000
-10000
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
-10
50
45
40
35
30
25
20
15
10
5
IC(MAX) (PULSE)
100μs
IC(MAX) (DC)
-1
TIP32 VCEO MAX.
TIP32A VCEO MAX.
TIP32B VCEO MAX.
TIP32C VCEO MAX.
-0.1
0
-10
-100
0
25
50
75
100
125
150
175
200
TC[oC], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Safe Operating Area
Figure 4. Power Derating
www.onsemi.com
3
Physical Dimensions
Figure 5. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
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4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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