TIL117VM [ONSEMI]
6 引脚 DIP 光电晶体管输出光耦合器;
| 型号： | TIL117VM |
| 厂家： | 
ONSEMI |
| 描述： | 6 引脚 DIP 光电晶体管输出光耦合器 输出元件 晶体管 光电晶体管 |
| 文件： | 总10页 (文件大小：360K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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MCT2EM, TIL111M, TIL117M
6-Pin General Purpose Phototransistor Optocouplers
Features
Description
• Minimum Current Transfer Ratio at IF = 10 mA,
VCE = 10 V:
The general purpose optocouplers consist of a gallium
arsenide infrared emitting diode driving a silicon photo-
transistor in a standard plastic six-pin dual-in-line
package.
– 20% for MCT2EM
– 50% for TIL117M
• Safety and Regulatory Approvals:
– UL1577, 4,170 VACRMS for 1 Minute
– DIN-EN/IEC60747-5-5, 850 V Peak Working
Insulation Voltage
Applications
• Power Supply Regulators
• Digital Logic Inputs
• Microprocessor Inputs
Schematic
Package Outlines
1
2
3
6
5
4
NC
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
Figure 2. Package Outlines
4. EMITTER
5. COLLECTOR
6. BASE
Figure 1. Schematic
©2005 Semiconductor Components Industries, LLC.
November-2017, Rev. 2
Publication Order Number :
MCT2EM/D
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Installation Classifications per DIN VDE
Characteristics
< 150 VRMS
< 300 VRMS
I–IV
I–IV
0110/1.89 Table 1, For Rated Mains Voltage
Climatic Classification
55/100/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
175
Symbol
Parameter
Value
Unit
Vpeak
Vpeak
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC
,
1360
VPR
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR
100% Production Test with tm = 1 s, Partial Discharge < 5 pC
,
1594
VIORM
VIOTM
Maximum Working Insulation Voltage
Highest Allowable Over-Voltage
External Creepage
850
6000
≥ 7
Vpeak
Vpeak
mm
mm
mm
mm
°C
External Clearance
≥ 7
External Clearance (for Option TV, 0.4" Lead Spacing)
Distance Through Insulation (Insulation Thickness)
Case Temperature(1)
≥ 10
≥ 0.5
175
DTI
TS
IS,INPUT
Input Current(1)
350
mA
PS,OUTPUT Output Power(1)
RIO
Insulation Resistance at TS, VIO = 500 V(1)
Note:
800
> 109
mW
Ω
1. Safety limit values – maximum values allowed in the event of a failure.
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2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified.
Symbol
Parameter
Device
Value
Unit
TOTAL DEVICE
TSTG
TOPR
TJ
Storage Temperature
Operating Temperature
All
All
All
All
All
All
-40 to +125
-40 to +100
-40 to +125
260 for 10 seconds
250
°C
°C
Junction Temperature
ºC
TSOL
Lead Solder Temperature
Total Device Power Dissipation @ TA = 25°C
Derate Above 25°C
°C
mW
mW/°C
PD
2.94
EMITTER
IF
DC/Average Forward Input Current
Reverse Input Voltage
All
60
3
mA
V
TIL111M
VR
IF(pk)
PD
MCT2EM, TIL117M
6
V
Forward Current – Peak (300 µs, 2% Duty Cycle)
LED Power Dissipation @ TA = 25°C
Derate Above 25°C
All
All
All
3
A
120
1.41
mW
mW/°C
DETECTOR
VCEO
VCBO
VECO
VEBO
Collector-to-Emitter Voltage
All
All
All
All
All
All
30
70
V
V
Collector-to-Base Voltage
Emitter-to-Collector Voltage
Emitter-to-Base Voltage
7
V
7
V
Detector Power Dissipation @ TA = 25°C
Derate Above 25°C
150
1.76
mW
mW/°C
PD
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3
Electrical Characteristics
TA = 25°C unless otherwise specified.
Individual Component Characteristics
Symbol
EMITTER
VF
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Input Forward Voltage
Reverse Leakage Current
IF = 10 mA
VR = 6.0 V
1.18
1.50
10
V
IR
0.001
µA
DETECTOR
BVCEO
BVCBO
BVEBO
BVECO
ICEO
Collector-to-Emitter Breakdown Voltage IC = 1.0 mA, IF = 0
30
70
7
100
120
10
10
1
V
V
Collector-to-Base Breakdown Voltage
Emitter-to-Base Breakdown Voltage
IC = 100 µA, IF = 0
IE = 10 uA, IF = 0
V
Emitter-to-Collector Breakdown Voltage IE = 100 µA, IF = 0
7
V
Collector-to-Emitter Dark Current
Collector-to-Base Dark Current
Capacitance
VCE = 10 V, IF = 0
VCB = 10 V
50
20
nA
nA
pF
ICBO
CCE
VCE = 0 V, f = 1 MHz
8
Transfer Characteristics
Symbol
Parameter
Test Conditions
Device
Min. Typ. Max. Unit
DC CHARACTERISTICS
MCT2EM
TIL117M
20
50
%
%
V
Current Transfer Ratio,
Collector-to-Emitter
IF = 10 mA, VCE = 10 V
CTR
IC = 2 mA, IF = 16 mA
IC = 0.5 mA, IF = 10 mA
MCT2EM, TIL111M
0.4
0.4
Collector-to-Emitter
Saturation Voltage
VCE (SAT)
TIL117M
V
AC CHARACTERISTICS
IF = 10 mA, VCC = 10 V,
MCT2EM
TIL117M
MCT2EM
TIL117M
2
2
2
2
µs
µs
µs
µs
RL = 100 Ω (Figure 13)
Non-Saturated
TON
Turn-on Time
IC = 2 mA, VCC = 10 V,
10
10
RL = 100 Ω (Figure 13)
IF = 10 mA, VCC = 10 V,
RL = 100 Ω (Figure 13)
TOFF
Turn-off Time
IC = 2 mA, VCC = 10 V,
RL = 100 Ω (Figure 13)
Isolation Characteristics
Symbol
VISO
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
Input-Output Isolation Voltage t = 1 Minute
4170
VACRMS
CISO
Isolation Capacitance
Isolation Resistance
VI-O = 0 V, f = 1 MHz
0.2
pF
RISO
VI-O = ±500 VDC, TA = 25°C
1011
Ω
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4
Typical Performance Curves
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
T
= 5.0 V
= 25°C
Normalized to
= 10 mA
CE
A
I
F
1.7
1.6
1.5
1.4
T
T
T
= -55°C
= 25°C
= 100°C
A
A
1.3
1.2
1.1
1.0
A
1
10
100
0
2
4
6
8
10
12
14
16
18
20
I
F
- LED FORWARD CURRENT (mA)
I - FORWARD CURRENT (mA)
F
Figure 4. Normalized CTR vs. Forward Current
Figure 3. LED Forward Voltage vs. Forward Current
1.4
1.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
I
F
= 20 mA
I
= 5 mA
F
I
= 10 mA
F
1.0
0.8
0.6
0.4
0.2
I
= 5 mA
F
I
= 10 mA
F
I
F
= 20 mA
V
= 5.0 V
CE
Normalized to
= 10 mA
I
F
T
= 25°C
A
-60
-40
-20
0
20
40
60
80
100
10
100
1000
R
- BASE RESISTANCE (kΩ)
BE
T
A
- AMBIENT TEMPERATURE (°C)
Figure 6. CTR vs. RBE (Unsaturated)
Figure 5. Normalized CTR vs. Ambient Temperature
100
10
1.0
0.9
T
A
= 25˚C
V
= 0.3 V
CE
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
I
= 20 mA
F
1
I
= 10 mA
F
I
= 2.5 mA
F
0.1
I
= 5 mA
F
I
= 20 mA
F
0.01
I
= 10 mA
I
F
= 5 mA
F
0.001
10
100
1000
0.01
0.1
1
10
R
BE
- BASE RESISTANCE (kΩ)
I
- COLLECTOR CURRENT (mA)
C
Figure 8. Collector-Emitter Saturation Voltage
vs. Collector Current
Figure 7. CTR vs. RBE (Saturated)
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5
Typical Performance Curves (Continued)
1000
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
I
V
T
= 10 mA
F
V
10 V
CC =
= 2 mA
= 10 V
CC
= 25°C
I
C
A
R
= 100 Ω
L
100
10
1
T
off
T
f
T
on
T
r
0.1
0.1
1
10
100
10
100
R
1000
10000
100000
R - LOAD RESISTOR (kΩ)
- BASE RESISTANCE (kΩ)
BE
Figure 9. Switching Speed vs. Load Resistor
Figure 10. Normalized t vs. R
on
BE
10000
1000
100
10
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
V
= 10 V
C
CE
= 25°
T
A
1
V
I
R
10 V
CC =
= 2 mA
C
0.1
= 100 Ω
L
0.01
0.001
0
20
40
60
80
100
10
100
1000
10000
100000
T
- AMBIENT TEMPERATURE (°C)
A
R
- BASE RESISTANCE (kΩ)
BE
Figure 12. Dark Current vs. Ambient Temperature
Figure 11. Normalized t vs. R
off
BE
Switching Time Test Circuit and Waveforms
VCC = 10 V
INPUT PULSE
IC
IF
RL
10%
INPUT
OUTPUT
OUTPUT PULSE
90%
RBE
tr
tf
toff
ton
IF to produce IC = 2 mA
Adjust
Figure 13. Switching Time Test Circuit and Waveforms
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6
Reflow Profile
300
280
260
240
220
200
180
260°C
> 24 °C = 42 s
Time above
160
°C
183°C = 90 s
140
120
100
80
60
40
20
0
1.822°C/s Ramp-up rate
33 s
0
60
120
180
270
360
Time (s)
Figure 14. Reflow Profile
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7
Ordering Information
Part Number
Package
Packing Method
Tube (50 Units)
MCT2EM
DIP 6-Pin
MCT2ESM
SMT 6-Pin (Lead Bend)
SMT 6-Pin (Lead Bend)
Tube (50 Units)
MCT2ESR2M
MCT2EVM
Tape and Reel (1000 Units)
Tube (50 Units)
DIP 6-Pin, DIN EN/IEC60747-5-5 Option
MCT2ESVM
MCT2ESR2VM
MCT2ETVM
SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option
SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option
DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option
Tube (50 Units)
Tape and Reel (1000 Units)
Tube (50 Units)
Note:
2. The product orderable part number system listed in this table also applies to the TIL111M and TIL117M devices.
Marking Information
1
2
MCT2E
6
V X YY Q
5
3
4
Figure 15. Top Mark
Table 1. Top Mark Definitions
1
2
3
4
5
6
ON Semiconductor Logo
Device Number
DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)
One-Digit Year Code, e.g., “6”
Digit Work Week, Ranging from “01” to “53”
Assembly Package Code
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8
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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