TIG067SS-TL-2W [ONSEMI]
IGBT，400V，150A，饱和压=3.8V，单 N 沟道;
| 型号： | TIG067SS-TL-2W |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，400V，150A，饱和压=3.8V，单 N 沟道 双极性晶体管 |
| 文件： | 总6页 (文件大小：1192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TIG067SS
IGBT
400V, 150A, V
www.onsemi.com
(
);
sat 3.8V Single N-Channel
CE
Features
•
•
Low-saturation Voltage
Enhancement Type
High Speed Switching
4.0V Drive
Built-in Gate-to-Emitter Protection Diode
Pb-Free, Halogen Free and RoHS Compliance
•
•
•
•
Applications
•
Light-controlling Flash
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage (DC)
Collector-to-Emitter Voltage (Pulse)
Gate-to-Emitter Voltage (DC)
Gate-to-Emitter Voltage (Pulse)
Collector Current (Pulse)
Symbol
Conditions
Ratings
Unit
V
V
V
V
V
400
450
±6
CES
PW≤1ms
PW≤1ms
V
CESP
GES
V
±8
V
GESP
I
C
=600μF
M
150
1500
1.2
A
CP
Maximum Collector-to-Emitter dv / dt
Allowable Power Dissipation
Channel Temperature
dv / dt
V
≤320V, starting Tch=25 C
V / s
μ
°
CE
P
D
When mounted on FR4 substrate (11,680mm2 1.6mm)
W
×
Tch
150
C
C
°
°
Storage Temperature
Tstg
-40 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: SOIC8
7072-002
• JEITA, JEDEC
: SC-87, SOT-96
• Minimum Packing Quantity : 2500 pcs./reel
TIG067SS-TL-2W
4.9
0.22
8
5
Packing Type: TL
Marking
TIG
1 : Emitter
2 : Emitter
3 : Emitter
4 : Gate
067
TL
LOT No.
1
4
1.27
0.254 (GAGE PLANE)
0.445
5 : Collector
6 : Collector
7 : Collector
8 : Collector
Electrical Connection
5 to 8
SOIC8
4
1 to 3
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
Publication Order Number :
1
October 2014 - Rev. 1
TIG067SS/D
TIG067SS
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
400
max
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Cutoff Current
Gate-to-Emitter Leakage Current
Gate-to-Emitter Threshold Voltage
Collector-to-Emitter Saturation Voltage
Input Capacitance
V
I
=2mA, V =0V
C GE
V
(BR)CES
I
I
V
V
V
=320V, V =0V
GE
10
μA
μA
V
CES
CE
GE
CE
=±6V, V =0V
CE
±10
1.0
5
GES
V
V
(off)
=10V, I =1mA
0.4
GE
CE
C
(sat)
I
=150A, V =4V
GE
3.8
5100
59
V
C
Cies
pF
pF
pF
ns
Output Capacitance
Coes
Cres
V
=10V, f=1MHz
CE
Reverse Transfer Capacitance
Fall Time
43
t
f
I
C
=150A, V =320V, Resistor load
CC
V
=4V, R =36
270
W
GE
G
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Fig1 Large Current R Load Switching Circuit
R
L
C
M
+
V
CC
R
G
TIG067SS
4V
0V
100kW
Note1. Gate Series Resistance R ≥ 36 is recommended for protection purpose at the time of turn OFF. However,
W
G
if dv / dt ≤ 1500 / μs is satisfied at customer’s actual set evaluation, R < 36 can also be used.
W
G
Note2. The collector voltage gradient dv / dt must be smaller than 1500V / μs to protect the device when it is turned off.
ORDERING INFORMATION
Device
Package
SOIC8
Shipping
memo
TIG067SS-TL-2W
2,500pcs./reel
Pb-Free and Halogen Free
www.onsemi.com
2
TIG067SS
I
-- V
I
-- V
C
CE
C
GE
200
175
150
125
100
75
200
175
150
125
100
75
Tc=25°C
V
=5V
CE
50
50
25
25
0
0
0
1
2
3
4
5
6
7
8
9
10
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Collector-to-Emitter Voltage, V
CE
-- V IT15734
Gate-to-Emitter Voltage, V
-- V
IT15735
GE
V
-- V
V
-- V
CE
GE
CE
GE
10
9
10
9
Tc= --25°C
Tc=25°C
8
8
7
7
6
6
5
5
4
4
3
3
2
1
2
1
1.0
1.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Gate-to-Emitter Voltage, V
-- V
Gate-to-Emitter Voltage, V
GE
-- V
IT15736
IT15737
GE
V
-- V
V
(sat) -- Tc
CE
GE
CE
6
10
Tc= 75°C
V
GE
=4V
9
8
7
6
5
4
3
5
4
3
2
2
1
1
--50
100
1.0
1.5
--25
0
25
50
75
125
150
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Gate-to-Emitter Voltage, V
GE
-- V
Case Temperature, Tc -- °C
IT15738
IT15739
V
(off) -- Tc
Cies, Coes, Cres -- V
GE
CE
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
10000
f=1MHz
V
=10V
7
5
CE
Cies
I =1mA
C
3
2
1000
7
5
3
2
100
7
5
3
2
0.1
0
--50
10
--25
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
16
18
20
IT15741
-- V
Case Temperature, Tc -- °C
IT15540
Collector-to-Emitter Voltage, V
CE
www.onsemi.com
3
TIG067SS
SW Time -- I
SW Time -- R
G
CP
3
2
3
2
Switching test circuit Fig.1
Switching test circuit Fig.1
V
V
=4V
=320V
V
V
I
=4V
=320V
=150A
GE
CC
GE
CC
CP
1000
1000
R =36W
G
7
5
7 C =600μF
5
M
PW=50μS
t
f
3
2
3
2
100
t
r
7
5
100
7
5
3
2
3
2
10
10
2
3
5
7
2
3
0
20
40
60
80
100
120
IT15924
100
Collector Current (Pulse), I
-- A
IT15923
Gate Series Resistance, R -- W
G
CP
dv / dt -- R
G
I
-- V
CP
GE
3000
2500
2000
1500
1000
180
160
140
120
100
80
Switching test circuit Fig.1
Tc≤70°C
=600μF
V
V
I
=4V
=320V
=150A
C
GE
CC
M
CP
60
40
500
0
20
0
0
10
20
30
40
50
60
70
80
90
100
0
1
2
3
4
5
6
7
8
9
Gate Series Resistance, R -- W
Gate-to-Emitter Voltage, V
-- V
IT15745
IT15746
G
GE
C
-- I
dv / dt -- Turn OFF I
M
CP
C
800
700
600
500
400
300
200
2000
1750
1500
1250
1000
750
V
V
=4V
=320V
Tc≤70°C
GE
CE
V
=320V
CE
Tc=25°C
Tc=70°C
500
100
250
0
0
0
20
40
60
80
100
120
140
160
180
0
20
40
60
80
100
120
140
160
180
IT15747
Collector Current (Pulse), I
CP
-- A
Turn OFF Collector Current, Turn OFF I -- A IT15748
C
P
-- Ta
D
1.4
1.2
1.0
0.8
0.6
0.4
When mounted on FR4 substrate
(11,680mm2✕1.6mm)
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT16955
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4
TIG067SS
Definition of dv/dt
dv/dt is defined as the maximum slope of the below V
curve during turn-off period.
CE
dv/dt= V / t= V /100ns
Δ Δ
Δ
CE
CE
Overall waveform
Enlarged picture of turn-off period
Turn-off period
V,I
V
CE
Turn off V
CE
t=100ns
Δ
I
CP
V
Δ
CE
Turn off I
C
V
CE
I
C
t
Definition of Switching Time
V
GE
V
:90%
GE
V
:10%
GE
t
V
CE
V
:90%
CE
V
:10%
V
:10%
CE
CE
t
t (on)
t
t (off)
d
d
r
I
C
I
:90%
C
I
:10%
C
t
t
f
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5
TIG067SS
Outline Drawing
Land Pattern Example
TIG067SS-TL-2W
Mass (g) Unit
Unit: mm
0.082
mm
* For reference
0.65
1.27
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nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
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6
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