TF262TH-4-TL-H [ONSEMI]

N-Channel JFET;


型号：	TF262TH-4-TL-H
厂家：	ONSEMI
描述：	N-Channel JFET
文件：	总6页 (文件大小：650K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TF262TH

N-Channel JFET

www.onsemi.com

–

20V, 140 to 350 A, 0.95mS

Features

•

Low Output Noise Voltage : V = 112dB typ. (V =2V, R =2.2k , Cin=5pF)

ꢀ

•

Ultrasmall Package Facilitates Miniaturization in End Products : 1.4mm × 1.2mm × 0.34mm

Especially Suited for use in electret condenser microphone for audio equipments and telephones

Adoption of FBET process

Halogen Free compliance

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Gate to Drain Voltage

Gate Current

Symbol

Conditions

Ratings

Unit

--20

GDO

Drain Current

Allowable Power Dissipation

Junction Temperature

Storage Temperature

100

150

Tstg

--55 to +150

This product is designed to “ESD immunity < 200V ”, so please take care when handling.

Machine Model

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

Packing Type : TL

Electrical Connection

Marking

TF262TH-4-TL-H

TF262TH-5-TL-H

1 : Drain

2 : Source

3 : Gate

SOT-623 / VTFP

ORDERING INFORMATION

See detailed ordering and shipping information on page 6 of this data sheet.

©Semiconductor Components Industries, LLC, 2015

Publication Order Number:

March 2015 - Rev. 1

TF262TH/D

TF262TH

at Ta=25°C

Electrical Characteristics

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

--20

max

Gate to Drain Breakdown Voltage

Cutoff Voltage

=--100 A

(BR)GDO

GS(off)

=2V, I =1 A

--0.2

140*

0.5

--0.5

--1.0

Drain Current

=2V, V =0V

350*

DSS

Forward Transfer Admittance

Input Capacitance

yfs

=2V, V =0V, f=1kHz

0.95

3.5

Ciss

Crss

=2V, V =0V, f=1MHz

Reverse Transfer Capacitance

=2V, V =0V, f=1MHz

0.65

[Ta=25°C, V =2.0V, R =2.2k , Cin=5pF, See speciﬁed Test Circuit.]

Voltage Gain

=10mV, f=1kHz

--1.5

--0.8

Reduced Voltage Characteristic

Frequency Characteristic

Total Harmonic Distortion

Output Noise Voltage

GVV

=10mV, f=1kHz, V =2.0V

1.5V

→

--2.0

--1.0

Gvf

f=1kHz to 110Hz

THD

=30mV, f=1kHz

=0V, A Curve

0.5

-- 112

*ꢀ:ꢀTheꢀTF262THꢀisꢀclassiﬁedꢀbyꢀI

as follows : (unit : A)

DSS

Marking

Rank

140 to 240

210 to 350

DSS

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be

indicated by the Electrical Characteristics if operated under different conditions.

Test Circuit

Voltage gain

Frequency Characteristic

Distortion

Reduced Voltage Characteristic

2.2kΩ

=2.0V

=1.5V

33µF

5pF

THD

VTVM

OSC

-- V

400

350

300

250

200

150

100

300

250

200

150

100

=2V

--0.8

--0.7

--0.6

--0.5

--0.4

--0.3

--0.2

--0.1

Drain to Source Voltage, V

-- V

IT16225

Gate to Source Voltage, V

-- V

IT16226

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TF262TH

-- V

| yfs | -- I

DSS

1.2

1.1

1.0

0.9

0.8

400

350

300

250

200

150

100

=2V

=0V

=2V

f=1kHz

0.7

0.6

--0.7

--0.6

--0.5

--0.4

--0.3

--0.2

--0.1

100

150

200

250

300

350

400

IT16228

Gate to Source Voltage, V

-- V

IT16227

DrainꢀCurrent,ꢀI

-- µA

DSS

(off) -- I

Ciss -- V

DSS

0.8

0.7

0.6

0.5

0.4

=2V

=1µA

=0V

f=1MHz

0.3

0.2

1.0

0.1

100

150

200

250

300

350

400

1.0

IT16230

DrainꢀCurrent,ꢀI

DSS

-- µA

Drain to Source Voltage, V -- V

IT16229

-- I

Crss -- V

DSS

--0.5

--1.0

--1.5

--2.0

--2.5

=0V

: V =2V

f=1kHz

f=1MHz

=10mV

R =2.2kΩ

Cin=5pF

: V =2V

DSS DS

1.0

--3.0

--3.5

0.1

100

150

200

250

300

350

400

IT16232

1.0

IT16231

Drain to Source Voltage, V

-- V

DrainꢀCurrent,ꢀI

DSS

-- µA

-- V

-- Cin

--2

--4

--6

--2

--4

--6

--8

--10

: V =10mV

f=1kHz

G : V =2V

V CC

=10mV

--8

--12

--14

R =2.2kΩ

f=1kHz

Cin=5pF

R =2.2kΩ

--10

Supply Voltage, V

-- V

IT16233

Electret Capacitance, Cin -- pF

IT16234

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TF262TH

-- I

THD -- V

DSS

--0.5

--1.0

--1.5

THD : V =2V

f=1kHz

R =2.2kΩ

Cin=5pF

1.0

: V =2V→1.5V

VV CC

=10mV

f=1kHz

--2.0

--2.5

R =2.2kΩ

Cin=5pF

: V =2V

DSS DS

0.1

100

150

200

100

150

200

250

300

350

400

IT16235

DrainꢀCurrent,ꢀI

DSS

-- µA

Input Voltage, V

-- mV

IT16236

THD -- I

-- Ta

DSS

1.0

0.8

0.6

0.4

120

100

THD : V =2V

=30mV

f=1kHz

R =2.2kΩ

Cin=5pF

: V =2V

DSS DS

0.2

100

150

200

250

300

350

400

IT16237

100

120

140

160

DrainꢀCurrent,ꢀI

-- µA

AmbientꢀTemperature, Ta -- °C

IT16238

DSS

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TF262TH

Package Dimensions

unit : mm

TF262TH-4-TL-H, TF262TH-5-TL-H

SOT-623 / VTFP

CASE 631AD

ISSUE O

Recommended Soldering

Footprint

0.5

0.45

0.45 0.45

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TF262TH

ORDERING INFORMATION

Device

Package

Shipping

8,000pcs. / Tape and Reel

memo

TF262TH-4-TL-H

SOT-623 / VTFP

Pb-Free and Halogen Free

TF262TH-5-TL-H

ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States

and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of

SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without

further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,

nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without

limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do

vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not

designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or

sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,

employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,

directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was

negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable

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