SZNZ8D16V4MX2WT5G [ONSEMI]

Zener Protection Diode;
SZNZ8D16V4MX2WT5G
型号: SZNZ8D16V4MX2WT5G
厂家: ONSEMI    ONSEMI
描述:

Zener Protection Diode

文件: 总4页 (文件大小:172K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
www.onsemi.com  
Zener Protection Diode  
NZ8D16V4MX2WT5G  
The NZ8D16V4 is designed for applications requiring transient  
overvoltage ESD protection. They are intended for use to protect  
voltage sensitive components from ESD and other harmful transient  
voltage events. This device provides a single channel of bidirectional  
protection in an, ultracompact X2DFNW2 1.0 x 0.6 mm package.  
This device is ideal to replace SOT23 or other dual diode 3 pin devices  
used as single line bidirectional protection.  
X2DFNW2  
CASE 711BG  
DEVICE MARKING INFORMATION  
DC M  
Features  
Very Low Leakage 1 nA  
Precise Clamping Voltage  
High ESD Ratings  
DC = Specific Device Code  
M
= Date Code  
Wettable Flank Package for optimal Automated Optical Inspection  
(AOI)  
SZ Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AECQ101 Qualified and  
PPAP Capable  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
ORDERING INFORMATION  
Device  
Package Shipping  
NZ8D16V4MX2WT5G  
SZNZ8D16V4MX2WT5G  
X2DFNW2 8000 / Tape  
(PbFree)  
& Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Typical Applications  
Automotive ECU’s  
IVN – In Vehicle Networking  
Voltage Sensitive Circuits  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Symbol  
Value  
Unit  
IEC 6100042 Contact (Note 1)  
IEC 6100042 Air  
ISO 10605 Contact (330 pF / 330 W)  
ISO 10605 Contact (330 pF / 2 kW)  
ISO 10605 Contact (150 pF / 2 kW)  
ESD  
30  
30  
30  
30  
30  
kV  
kV  
kV  
kV  
kV  
Total Power Dissipation (Note 2) @ T = 25°C  
°P °  
300  
400  
mW  
°C/W  
A
D
Thermal Resistance, JunctiontoAmbient  
R
q
JA  
Junction and Storage Temperature Range  
T , T  
55 to  
+150  
°C  
J
stg  
Lead Solder Temperature Maximum  
(10 Second Duration)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Nonrepetitive current pulse at T = 25°C, per IEC6100042 waveform.  
A
2. Mounted with recommended minimum pad size, DC board FR4  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
September, 2021 Rev. 0  
NZ8D16V4/D  
 
NZ8D16V4MX2WT5G  
ELECTRICAL CHARACTERISTICS  
(T = 25°C unless otherwise noted)  
A
I
I
PP  
Symbol  
Parameter  
I
Maximum Reverse Peak Pulse Current  
PP  
I
T
I
V
R
BR RWM  
V
Clamping Voltage @ I  
V
C
V
C
PP  
V
I
V
V
V
R
T
RWM BR C  
V
RWM  
Working Peak Reverse Voltage  
I
I
R
Maximum Reverse Leakage Current @ V  
RWM  
V
Breakdown Voltage @ I  
Test Current  
BR  
T
I
PP  
I
T
BiDirectional  
*See Application Note AND8308/D for detailed explanations of  
datasheet parameters.  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Parameter  
Reverse Working Voltage  
Breakdown Voltage  
Symbol  
Condition  
Min  
Typ  
Max  
Unit  
V
V
RWM  
13.0  
V
BR  
I
I
= 1 mA (Note 3)  
= 1 mA (Note 3) @ 150°C  
15.9  
16.8  
1.0  
17.5  
18.7  
V
T
T
Reverse Leakage Current  
Reverse Peak Pulse Current  
Clamping Voltage (8/20 ms)  
I
R
V
= 13 V  
10.0  
nA  
A
RWM  
I
PP  
IEC 6100042 (8/20 ms)  
= 1.0 A  
4.5  
V
C
I
PP  
18.0  
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
3. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.  
www.onsemi.com  
2
 
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
X2DFNW2 1.0x0.6, 0.65P  
CASE 711BG  
ISSUE C  
SCALE 8:1  
DATE 13 SEP 2019  
GENERIC  
MARKING DIAGRAM*  
XXM  
XX = Specific Device Code  
M
= Date Code  
*This information is generic. Please refer  
to device data sheet for actual part  
marking. PbFree indicator, “G”, may  
or not be present. Some products may  
not follow the Generic Marking.  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON15241G  
X2DFNW2 1.0X0.6, 0.65P  
PAGE 1 OF 1  
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© Semiconductor Components Industries, LLC, 2019  
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