SZMMBZH12VAWT1G [ONSEMI]
40W 双共阳极齐纳二极管系列，+175°C;
| 型号： | SZMMBZH12VAWT1G |
| 厂家： | 
ONSEMI |
| 描述： | 40W 双共阳极齐纳二极管系列，+175°C 二极管 齐纳二极管 |
| 文件： | 总6页 (文件大小：213K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Diodes, Dual 40 Watt Peak
Power, High Temperature
SC−70 Dual Common Anode Zeners
MMBZHxxVAWT1G Series,
SZMMBZHxxVAWT1G Series
www.onsemi.com
These dual monolithic silicon Zener diodes are designed for
applications requiring transient overvoltage ESD protection capability.
They are intended for use in voltage and ESD sensitive equipment such
as computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are high temperature rated and ideal for use in high reliability
applications where board space is at a premium.
SC−70
CASE 419
STYLE 4
Features
• SC−70 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
• Standard Zener Breakdown Voltage Range: 12 − 33 V
CATHODE 1
CATHODE 2
3 ANODE
• Peak Power − 40 W @ 1.0 ms (Unidirectional),
per Figure 5 Waveform
MARKING DIAGRAM
• ESD Rating:
− Class 3B (> 16 kV) per the Human Body Model
− Class C (> 400 V) per the Machine Model
XX MG
G
• Low Leakage < 5.0 mA
1
• Flammability Rating UL 94 V−0
• 175°C T
− Rated for High Temperature, Mission Critical
J(MAX)
Applications
XX = Specific Device Code
M
= Date Code
= Pb−Free Package
G
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
(Note: Microdot may be in either location)
• These are Pb−Free Devices*
Mechanical Characteristics:
ORDERING INFORMATION
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
Package designed for optimal automated board assembly
Small package size for high density applications
Available in 8 mm Tape and Reel
†
Device
Package
Shipping
MMBZHxxVAWT1G
SC−70
(Pb−Free)
3,000 /
Tape & Reel
SZMMBZHxxVAWT1G
SC−70
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Use the Device Number to order the 7 inch/3,000 unit reel.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the table on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
October, 2019 − Rev. 2
MMBZH27VAW/D
MMBZHxxVAWT1G Series, SZMMBZHxxVAWT1G Series
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation @ 1.0 ms (Note 1)
P
pk
W
@ T ≤ 25°C
40
L
Total Power Dissipation on FR−5 Board (Note 2)
°P °
D
°
@ T = 25°C
225
1.5
mW
A
Derate above 25°C
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 2)
Junction and Storage Temperature Range
R
605
°C/W
°C
q
JA
T , T
J
− 55 to +175
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse per Figure 5 and derate above T = 25°C per Figure 6.
A
2. FR−5 = 1.0 x 0.75 x 0.62 in.
ELECTRICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
A
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
I
I
PP
Maximum Reverse Peak Pulse Current
I
F
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
V
C
V
V
BR RWM
V
I
Test Current
I
V
F
T
R
T
I
QV
Maximum Temperature Coefficient of V
Forward Current
BR
BR
I
F
V
Forward Voltage @ I
F
F
I
PP
Z
ZT
Maximum Zener Impedance @ I
Reverse Current
ZT
I
ZK
Uni−Directional Zener
Z
ZK
Maximum Zener Impedance @ I
ZK
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(V = 0.9 V Max @ I = 10 mA)
F
F
Breakdown Voltage
V
@ I (Note 4)
C
PP
I
V
@
RWM
nA
R
V
(Note 3) (V)
@ I
V
I
PP
V
RWM
QV
BR
T
C
BR
Device
mV/5C
Volts
8.5
12
Min
Nom
12
Max
mA
1.0
1.0
1.0
1.0
1.0
V
A
Marking
Device*
MMBZH12VAWT1G
MMBZH15VAWT1G
MMBZH20VAWT1G**
MMBZH27VAWT1G**
MMBZH33VAWT1G**
CK
AJ
−
200
50
50
50
50
11.40
14.25
19.00
25.65
31.35
12.60
15.75
21.00
28.35
34.65
17
21
28
40
46
2.35
1.9
7.5
15
12.3
17.2
24.3
30.4
17
20
1.4
−
22
27
1.0
−
26
33
0.87
3. V measured at pulse test current I at an ambient temperature of 25°C.
BR
T
4. Surge current waveform per Figure 5 and derate per Figure 6.
*Includes SZ prefix devices where applicable.
**AEC−Q release available upon request.
www.onsemi.com
2
MMBZHxxVAWT1G Series, SZMMBZHxxVAWT1G Series
TYPICAL CHARACTERISTICS
18
15
12
9
1000
100
10
1
6
3
0
0.1
0.01
−40
0
+50
+100
+150
−40
+25
+85
+125
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 1. Typical Breakdown Voltage
versus Temperature
Figure 2. Typical Leakage Current
versus Temperature
(Upper curve for each voltage is bidirectional mode,
lower curve is unidirectional mode)
320
300
280
240
200
160
120
80
250
200
5.6 V
150
100
50
15 V
FR−5 BOARD
40
0
0
0
1
2
3
0
25
50
75
100 125
150 175 200
BIAS (V)
TEMPERATURE (°C)
Figure 3. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
Figure 4. Steady State Power Derating Curve
www.onsemi.com
3
MMBZHxxVAWT1G Series, SZMMBZHxxVAWT1G Series
TYPICAL CHARACTERISTICS
100
PULSE WIDTH (t ) IS DEFINED
P
90
80
70
60
50
40
30
20
10
0
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
t ≤ 10 ms
r
50% OF I .
PP
100
PEAK VALUE − I
PP
I
PP
HALF VALUE −
2
50
0
t
P
0
1
2
3
4
0
25
50
75
100
125
150 175 200
t, TIME (ms)
T , AMBIENT TEMPERATURE (°C)
A
Figure 5. Pulse Waveform
Figure 6. Pulse Derating Curve
100
100
10
1
RECTANGULAR
WAVEFORM, T = 25°C
RECTANGULAR
WAVEFORM, T = 25°C
A
A
BIDIRECTIONAL
BIDIRECTIONAL
10
UNIDIRECTIONAL
UNIDIRECTIONAL
1
0.1
1
10
100
1000
0.1
1
10
100
1000
PW, PULSE WIDTH (ms)
PW, PULSE WIDTH (ms)
Figure 7. Maximum Non−repetitive Surge
Figure 8. Maximum Non−repetitive Surge
Power, Ppk versus PW
Power, Ppk(NOM) versus PW
Power is defined as V
x I (pk) where V
is
Power is defined as V (NOM) x I (pk) where
Z Z
RSM
Z
RSM
the clamping voltage at I (pk).
V (NOM) is the nominal Zener voltage measured at
Z
Z
the low test current used for voltage classification.
www.onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419
ISSUE R
DATE 11 OCT 2022
SCALE 4:1
GENERIC
MARKING DIAGRAM
XX MG
G
1
XX
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLE 1:
STYLE 2:
PIN 1. ANODE
2. N.C.
3. CATHODE
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 4:
STYLE 5:
PIN 1. ANODE
2. ANODE
3. CATHODE
CANCELLED
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 6:
STYLE 7:
PIN 1. BASE
STYLE 8:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 9:
STYLE 10:
STYLE 11:
PIN 1. EMITTER
PIN 1. ANODE
PIN 1. CATHODE
2. ANODE
PIN 1. CATHODE
2. CATHODE
2. BASE
2. EMITTER
2. CATHODE
3. COLLECTOR
3. COLLECTOR
3. CATHODE-ANODE
3. ANODE-CATHODE
3. CATHODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42819B
SC−70 (SOT−323)
PAGE 1 OF 1
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