STTFS015N10MCL [ONSEMI]
Power MOSFET, N Channel, 100V, 42 A, 12.9mΩ;
| 型号： | STTFS015N10MCL |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, N Channel, 100V, 42 A, 12.9mΩ |
| 文件： | 总9页 (文件大小：320K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET - Power, Single
N-Channel
100 V, 12.9 mW, 42 A
STTFS015N10MCL
Features
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• Small Footprint (3.3x3.3 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• Primary DC−DC MOSFET
12.9 mW @ 10 V
19.8 mW @ 4.5 V
• Synchronous Rectifier in DC−DC and AC−DC
• Motor Drive
100 V
42 A
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ELECTRICAL CONNECTION
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
S
S
D
D
D
Parameter
Drain−to−Source Voltage
Symbol
Value
100
20
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
V
S
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
42
A
C
D
G
D
q
JC
T
C
27
(Notes 1, 3)
Steady
State
Power Dissipation
T
C
P
45
W
A
N-Channel MOSFET
D
R
(Note 1)
q
JC
T
C
= 100°C
18
Continuous Drain
Current R
T = 25°C
A
I
D
10
8 7 6 5
D D D D
q
JA
Steady
State
(Notes 1, 2, 3)
Power Dissipation
T = 25°C
A
P
2.5
W
D
R
(Notes 1, 2)
q
JA
Pin 1
1 2 3 4
Top
G S S S
Bottom
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
130
A
Pin 1
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+150
°C
J
stg
WDFN8
(3.3x3.3, 0.65 P)
CASE 511DY
Single Pulse Drain−to−Source Avalanche
Energy (L = 3 mH, I = 6 A)
E
AS
54
mJ
AS
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
XXXX
AYWW
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
2.8
Unit
XXXX
= Device Code
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
A
= Assembly Location
R
50
q
Y
= Year Code
JA
WW
= Work Week Code
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
August, 2020 − Rev. 0
STTFS015N10MCL/D
STTFS015N10MCL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
100
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
60
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
DS
= 0 V,
T = 25 °C
1.0
250
100
DSS
GS
J
V
= 100 V
mA
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
V
= V , I = 77 mA
1
1.45
−5.0
10.6
14.4
50
3
V
GS(TH)
GS
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
J
mV/°C
GS(TH)
R
V
GS
= 10 V
I
D
= 14 A
= 11 A
12.9
19.8
DS(on)
mW
V
GS
= 4.5 V
I
D
Forward Transconductance
g
FS
V
DS
=5 V, I = 14 A
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
1338
521
9.0
0.5
9.0
19
ISS
Output Capacitance
C
OSS
C
RSS
V
= 0 V, f = 1 MHz, V = 50 V
pF
GS
DS
Reverse Transfer Capacitance
Gate Resistance
R
0.1
1
W
G
Total Gate Charge
Q
Q
V
GS
= 4.5 V, V = 50 V; I = 14 A
nC
nC
G(TOT)
G(TOT)
DS
D
Total Gate Charge
V
GS
= 10 V, V = 50 V; I = 14 A
DS D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
2.0
3.0
3.0
2.7
35
G(TH)
Q
nC
GS
GD
GP
V
= 10 V, V = 50 V; I = 14 A
GS
DS
D
Q
V
V
Output Charge
Q
V
GS
= 0 V, V = 50 V
nC
nC
OSS
DS
Total Gate Charge Sync
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Q
V
GS
= 0 to 10 V, V = 0 V
17
SYNC
DS
t
9.0
10
d(ON)
Rise Time
t
r
V
= 10 V, V = 50 V,
DS
GS
D
ns
V
I
= 14 A, R = 6.0 W
G
Turn−Off Delay Time
t
25
d(OFF)
Fall Time
t
f
5.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Source to Drain Diode Forward Voltage
V
V
V
= 0 V, I = 2 A
(Note 7)
(Note 7)
0.7
0.83
20
1.2
1.3
SD
GS
S
= 0 V, I = 14 A
GS
S
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
t
rr
ns
nC
ns
I = 7 A, di/dt = 300 A/ms
F
Q
33
rr
t
rr
14
I = 7 A, di/dt = 1000 A/ms
F
Q
76
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
STTFS015N10MCL
NOTES:
6. R
2
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is determined
q
q
CA
JA
by the user’s board design.
a) 50°C/W when mounted on
b) 125°C/W when mounted on
a minimum pad of 2 oz copper.
2
a 1 in pad of 2 oz copper.
7. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
8. E of 54 mJ is based on starting T = 25_C; L = 3 mH, I = 6 A, V = 100 V, V = 10 V.
AS
J
AS
DD
GS
9. Pulsed I please refer to Figure 11 SOA graph for more details.
D
10.Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal
& electro−mechanical application board design.
DEVICE ORDERING INFORMATION
†
Device
Marking
Package
Shipping
STTFS015N10MCL
S15L
WDFN8 (3.3x3.3)
1500 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
STTFS015N10MCL
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
3.0
150
100
50
VGS = 3.5 V
VGS = 4.5 V
VGS = 3 V
V
GS = 10 V
V
GS = 6 V
V
GS = 8 V
2.5
V
GS = 4.5 V
VGS = 6 V
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
2.0
1.5
1.0
VGS = 3.5 V
VGS = 3 V
VGS = 8 V
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
VGS = 10 V
150
0
0
50
100
0
1
2
3
4
5
ID, DRAIN CURRENT (A)
V
DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance
vs. Drain Current and Gate Voltage
150
100
50
2.2
2.0
1.8
1.6
1.4
1.2
1.0
I
D = 14 A
ID = 14 A
VGS = 10 V
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
TJ = 150 o
C
0.8
0.6
TJ = 25 o
C
0
−75 −50 −25
0
25 50 75 100 125 150
1
2
3
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On-Resistance
vs. Gate to Source Voltage
150
100
50
100
10
1
VDS = 5 V
VGS = 0 V
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
TJ = 150 o
C
25oC
0.1
TJ = 25 o
C
0.01
TJ = 150 o
C
−55oC
TJ = −55oC
0.001
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
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4
STTFS015N10MCL
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
10
8
10000
ID = 14 A
Ciss
1000
100
10
V
DD = 25 V
Coss
6
V
DD = 50 V
4
VDD = 75 V
Crss
2
f = 1 MHz
VGS = 0 V
0
1
0
5
10
Qg, GATE CHARGE (nC)
15
20
0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain
to Source Voltage
100
10
1
60
50
40
30
20
VGS = 10 V
TJ = 25 oC
VGS = 4.5 V
TJ = 100 o
C
TJ = 150 o
C
10
0
R
qJC = 2.8 oC/W
0.001
0.01
0.1
1
10
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
1000
100
10
10000
1000
SINGLE PULSE
qJC = 2.8oC/W
T
R
C = 25oC
10 ms
100 ms
100
10
1 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
10 ms
100 ms/DC
0.1
0.1
1
10
100 200
0.00001 0.0001
0.001
0.01
0.1
1
VDS, DRAIN−SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
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5
STTFS015N10MCL
TYPICAL CHARACTERISTICS (continued)
10
DUTY CYCLE−DESCENDING ORDER
D = 0.5
1
0.2
0.1
0.05
0.02
P
DM
0.1
0.01
t
1
t
SINGLE PULSE
2
NOTES:
0.01
Z
R
(t) = r(t) x R
qJC
qJC
o
= 2.8 C/W
qJC
Peak T = P
x Z (t) + T
J
DM
qJC C
Duty Cycle, D = t / t
1
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (s)
Figure 13. Junction−to−Case Transient Thermal Response Curve
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6
STTFS015N10MCL
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DY
ISSUE A
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7
STTFS015N10MCL
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
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