SS18 [ONSEMI]

1.0 A 肖特基势垒整流器;
SS18
型号: SS18
厂家: ONSEMI    ONSEMI
描述:

1.0 A 肖特基势垒整流器

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SS12 - S100  
Schottky Rectifier  
Description  
The SS12S100 series includes highefficiency, low power loss,  
generalpropose schottky rectifiers. The clip bonded leg structure  
provides high thermal performance and low electrical resistance.  
These rectifiers are suited for free wheeling, secondary rectification,  
and reverse polarity protection applications.  
www.onsemi.com  
Cathode  
(2)  
Features  
GlassPassivated Junctions  
Anode  
(1)  
HighCurrent Capability, Low V  
F
SMA  
CASE 403AE  
These Devices are PbFree, Halogen Free and are RoHS Compliant  
Applications  
Low Voltage  
Anode  
(1)  
Cathode  
(2)  
HighFrequency Inverters  
Free Wheeling  
Polarity Protection  
MARKING DIAGRAM  
$Y&Z&3  
Sxxx  
$Y  
&Z  
&3  
Sxxx  
= ON Semiconductor Logo  
= Assembly Plant Code  
= Date Code (Year & Week)  
= Specific Device Code  
ORDERING INFORMATION  
Part Number  
Top Mark  
Package  
Shipping  
SS12  
SS12  
SMA  
7500 / Tape & Reel  
7500 / Tape & Reel  
7500 / Tape & Reel  
7500 / Tape & Reel  
7500 / Tape & Reel  
7500 / Tape & Reel  
7500 / Tape & Reel  
7500 / Tape & Reel  
(PbFree/Halogen Free)  
SS13  
SS14  
SS15  
SS16  
SS18  
SS19  
S100  
SS13  
SS14  
SS15  
SS16  
SS18  
SS19  
S100  
SMA  
(PbFree/Halogen Free)  
SMA  
(PbFree/Halogen Free)  
SMA  
(PbFree/Halogen Free)  
SMA  
(PbFree/Halogen Free)  
SMA  
(PbFree/Halogen Free)  
SMA  
(PbFree/Halogen Free)  
SMA  
(PbFree/Halogen Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
January, 2019 Rev. 3  
SS19/D  
SS12 S100  
Specifications  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Value  
SS12  
SS13  
SS14  
SS15  
50  
SS16  
SS18  
SS19  
S100  
Symbol  
Parameter  
Unit  
V
V
RRM  
Peak Repetitive Reverse Voltage  
20  
30  
40  
60  
80  
90  
100  
I
Maximum Average Forward Current:  
1.0  
40  
A
F(AV)  
0.375inch Lead Length at T = 75°C  
A
I
NonRepetitive Peak Forward Surge  
Current: 8.3 ms Single HalfSine Wave  
A
FSM  
T
Operating Junction Temperature  
Storage Temperature Range  
65 to +125  
65 to +150  
°C  
°C  
J
T
STG  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Symbol  
Characteristic  
Value  
1.1  
Unit  
W
P
D
Power Dissipation  
Thermal Resistance, JunctiontoAmbient (Note 1)  
R
88  
°C/W  
q
JA  
1. Device mounted on FE4 PCB 0.013 mm.  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Value  
SS15 SS16  
SS12  
SS13  
SS14  
SS18  
SS19  
S100  
Symbol  
Parameter  
Conditions  
Unit  
V
F
Maximum Forward  
Voltage  
I
F
= 1.0 A  
500  
700  
850  
mV  
I
R
Maximum Reverse  
Current at Rated V  
T
= 25°C  
0.2  
10  
mA  
A
R
T
A
= 100°C  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
www.onsemi.com  
2
 
SS12 S100  
TYPICAL PERFORMANCE CHARACTERISTICS  
20  
1
0.75  
0.5  
SS12 SS14  
10  
5
SS15 SS16  
SINGLE PHASE  
HALF WAVE  
60 Hz  
SS18 S100  
1
RESISTIVE OR  
INDUCTIVE LOAD  
P.C.B. MOUNTED  
ON 0.2x0.2”(5.0x5.0mm)  
COPPER PAD AREAS  
0.25  
0
T
= 255C  
1% Duty Cycle  
J
Pulse Width = 300 ms  
0.1  
0
20  
40  
60  
80  
100 120  
140  
0
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
2
Lead Temperature [°C]  
Forward Voltage, V [V]  
F
Figure 1. Forward Current Derating Curve  
Figure 2. Forward Voltage Characteristics  
30  
400  
200  
25  
T
= 255C  
8.3 ms Single Half-Sine-Wave  
JEDEC Method  
J
20  
100  
15  
10  
5
50  
40  
30  
20  
0
10  
1
2
5
10  
20  
50  
100  
0.1  
0.5  
1
5
10  
50 100  
Number of Cycles at 60 Hz  
Reverse Voltage, V [V]  
R
Figure 3. NonRepetitive Surge Current  
Figure 4. Total Capacitance  
10  
S100  
TA= 125oC  
1
TA= 75oC  
TA= 25oC  
0.1  
o
TA= 20C  
0.01  
o
T = 65C  
A
1E3  
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8  
Forward Voltage, V [V]  
F
Figure 5. LowCurrent Forward Voltage  
Characteristics  
www.onsemi.com  
3
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SMA  
CASE 403AE  
ISSUE O  
DATE 31 AUG 2016  
5.60  
4.80  
M
B
B
0.13  
B
C
B
A
2.65  
2.95  
2.50  
1.65  
1.20  
1.75  
4.30  
4.75  
4.00  
B
A
LAND PATTERN RECOMMENDATION  
TOP VIEW  
2.50 MAX  
A
2.20  
1.90  
NOTES:  
A. EXCEPT WHERE NOTED, CONFORMS  
TO JEDEC DO214 VARIATION AC.  
0.30  
0.05  
B
DOES NOT COMPLY JEDEC STANDARD  
VALUE.  
0.203  
0.050  
B
C
C. ALL DIMENSIONS ARE IN MILLIMETERS.  
D. DIMENSIONS ARE EXCLUSIVE OF  
BURRS, MOLD FLASH AND TIE BAR  
PROTRUSIONS.  
E. DIMENSIONS AND TOLERANCE AS  
PER ASME Y14.52009.  
E. LAND PATTERN STD. DIOM5025X231M  
2.05  
1.95  
M
0.13  
C
B
A
SIDE VIEW  
8 °  
0 °  
R0.15 4X  
GAGE PLANE  
0.45  
0.41  
0.15  
1.52  
0.75  
8 °  
0 °  
DETAIL A  
SCALE 20 : 1  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13440G  
SMA  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. onsemi reserves the right to make changes at any time to any  
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information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use  
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information  
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ADDITIONAL INFORMATION  
TECHNICAL PUBLICATIONS:  
Technical Library: www.onsemi.com/design/resources/technicaldocumentation  
onsemi Website: www.onsemi.com  
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