SI4435DY [ONSEMI]
30V P 沟道 PowerTrench® MOSFET -8.8A,20mΩ;型号: | SI4435DY |
厂家: | ONSEMI |
描述: | 30V P 沟道 PowerTrench® MOSFET -8.8A,20mΩ |
文件: | 总8页 (文件大小:290K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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December 2018
SI4435DY
30V P-Channel PowerTrenchÒ MOSFET
General Description
Features
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
· –8.8 A, –30 V
RDS(ON) = 20 mW @ VGS = –10 V
RDS(ON) = 35 mW @ VGS = –4.5 V
· Low gate charge (17nC typical)
· Fast switching speed
Applications
· Power management
· Load switch
· High performance trench technology for extremely
low RDS(ON)
· Battery protection
· High power and current handling capability
D
5
6
7
8
4
3
2
1
D
D
D
SO-8
G
S
S
S
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–30
V
VGSS
ID
Gate-Source Voltage
±20
V
A
Drain Current – Continuous
– Pulsed
(Note 1a)
–8.8
–50
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
2.5
W
1.2
1
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +175
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1c)
(Note 1)
50
125
25
RqJA
RqJA
RqJC
°C/W
°C/W
°C/W
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device
Device Marking
Reel Size
Tape width
Quantity
SI4435DY
4435
13’’
12mm
2500 units
Ó2018 Semiconductor Components Industries, LLC.
SI4435DY Rev 4
Electrical Characteristics
TA= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 mA
–30
V
Breakdown Voltage Temperature
Coefficient
DBVDSS
DTJ
ID = –250 mA, Referenced to 25°C
VDS = –24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
–21
mV/°C
mA
IDSS
Zero Gate Voltage Drain Current
–1
IGSSF
IGSSR
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
100
–100
nA
nA
VGS = –20 V, VDS = 0 V
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VDS = VGS, ID = –250 mA
–1
–1.7
5
–3
V
DVGS(th)
DTJ
RDS(on)
ID = –250 mA, Referenced to 25°C
mV/°C
mW
VGS = –10 V,
ID = –8.8 A
15
22
19
20
35
32
VGS = –4.5 V, ID = –6.7 A
VGS= –10 V, ID = –8.8A, TJ=125°C
ID(on)
gFS
On–State Drain Current
VGS = –10 V,
VDS = –5 V,
VDS = –5 V
ID = –8.8 A
–40
A
S
Forward Transconductance
24
Dynamic Characteristics
C
Input Capacitance
1604
408
pF
pF
pF
iss
VDS = –15 V,
f = 1.0 MHz
V GS = 0 V,
Coss
Output Capacitance
C
rss
Reverse Transfer Capacitance
202
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
VDD = –15 V,
VGS = –10 V,
ID = –1 A,
RGEN = 6 W
13
13.5
42
25
17
5
23
24
68
40
24
ns
ns
ns
ns
Qg
VDS = –15 V,
VGS = –5 V
ID = –8.8 A,
nC
nC
nC
Qgs
Qgd
6
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–2.1
A
V
Drain–Source Diode Forward
VSD
VGS = 0 V, IS = –2.1 A (Note 2)
–0.73 –1.2
Voltage
Notes:
1. RqJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RqJCis guaranteed by design while RqCAis determined by the user's board design.
a) 50°C/W when
mounted on a 1in
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
2
2
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
SI4435DY Rev 4
Typical Characteristics
2
1.8
1.6
1.4
1.2
1
50
VGS = -10V
-6.0V
-4.5V
VGS=-4.5V
-4.0V
40
30
20
10
0
-4.5V
-3.5V
-5.0V
-6.0V
-7.0V
-3.0V
-8.0V
40
-10V
0.8
0
1
2
3
0
10
20
30
50
-VDS , DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.07
ID = -8.8A
VGS = -10V
ID = -4.4A
0.06
0.05
0.04
0.03
0.02
0.01
TA = 125oC
0.8
0.6
TA = 25oC
-50
-25
0
25
50
75
100
125
150
175
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
40
VGS =0V
VDS = -5V
TA = -55oC
25oC
10
TA = 125oC
30
20
10
0
125oC
1
o
25 C
0.1
-55oC
0.01
0.001
0.0001
1.5
2
2.5
3
3.5
4
0
0.2
0.4
0.6
0.8
1
1.2
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
SI4435DY Rev 4
Typical Characteristics
10
2500
2000
1500
1000
500
VDS = -5V
f = 1 MHz
VGS = 0 V
ID = -8.8A
-10V
8
6
4
2
0
-15V
CISS
COSS
CRSS
0
0
6
12
18
24
30
0
5
10
15
20
25
30
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
50
40
30
20
10
0
SINGLE PULSE
RDS(ON) LIMIT
100ms
Rq = 125°C/W
JA
TA = 25°C
1ms
10ms
100ms
1s
1
10s
DC
VGS = -10V
SINGLE PULSE
RqJA = 125oC/W
TA = 25oC
0.1
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
-VDS , DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RqJA(t) = r(t) + RqJA
RqJA = 125oC/W
0.2
0.1
0.1
0.05
0.02
P(pk)
t1
0.01
t2
0.01
TJ - TA = P * R JA(t)
q
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
SI4435DY Rev 4
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarksꢀ
â
â
SILENT SWITCHER
SMARTSTART
SPM
STAR*POWER
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
UHC
UltraFET
VCX
FAST
ACEx
Bottomless
CoolFET
CROSSVOLT
DenseTrench
DOME
MICROWIRE
OPTOLOGIC
OPTOPLANAR
PACMAN
POP
â
â
FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC
Power247
I2C
â
EcoSPARK
PowerTrench
E2CMOSTM
ISOPLANAR
LittleFET
MicroFET
MicroPak
QFET
QS
QT Optoelectronics
Quiet Series
EnSignaTM
TinyLogic
TruTranslation
FACT
FACT Quiet Series
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGNꢀ FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERSꢀ
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATIONꢀ
As used herein:
1ꢀ Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
userꢀ
2ꢀ A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectivenessꢀ
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product developmentꢀ Specifications may change in
any manner without noticeꢀ
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later dateꢀ
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
designꢀ
No Identification Needed
Obsolete
Full Production
This datasheet contains final specificationsꢀ Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve designꢀ
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductorꢀ
The datasheet is printed for reference information onlyꢀ
Revꢀ H5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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