SGP23N60UFDTU [ONSEMI]
600V,PT IGBT;型号: | SGP23N60UFDTU |
厂家: | ONSEMI |
描述: | 600V,PT IGBT 局域网 电动机控制 瞄准线 双极性晶体管 开关 |
文件: | 总10页 (文件大小:723K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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IGBT
SGP23N60UFD
Ultra-Fast IGBT
General Description
Features
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
•
•
•
•
High speed switching
Low saturation voltage : V
High input impedance
= 2.1 V @ I = 12A
CE(sat)
C
CO-PAK, IGBT with FRD : t = 42ns (typ.)
rr
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
E
G
TO-220
G C E
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Description
SGP23N60UFD
Units
V
V
V
Collector-Emitter Voltage
600
CES
GES
Gate-Emitter Voltage
± 20
V
Collector Current
@ T
=
25°C
23
A
C
I
C
Collector Current
@ T = 100°C
12
A
C
I
I
I
Pulsed Collector Current
92
A
CM (1)
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T = 100°C
12
92
A
F
C
A
FM
P
@ T
=
25°C
100
W
W
°C
°C
D
C
@ T = 100°C
40
C
T
-55 to +150
-55 to +150
J
T
stg
T
300
°C
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Typ.
--
Max.
Units
°C/W
°C/W
°C/W
R
R
R
(IGBT)
1.2
2.5
θJC
θJC
θJA
(DIODE)
--
Thermal Resistance, Junction-to-Ambient
--
62.5
©2002 Fairchild Semiconductor Corporation
SGP23N60UFD Rev. A1
Electrical Characteristics of the IGBT
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
V
V
= 0V, I = 250uA
600
--
--
--
--
V
CES
GE
C
∆B
/
VCES
J
= 0V, I = 1mA
0.6
V/°C
GE
C
∆T
I
I
Collector Cut-Off Current
G-E Leakage Current
V
V
= V
= V
, V = 0V
--
--
--
--
250
uA
nA
CES
GES
CE
CES
GE
, V = 0V
± 100
GE
GES
CE
On Characteristics
V
G-E Threshold Voltage
I
I
I
= 12mA, V = V
GE
3.5
--
4.5
2.1
2.6
6.5
2.6
--
V
V
V
GE(th)
C
C
C
CE
= 12A,
= 23A,
V
V
= 15V
= 15V
Collector to Emitter
Saturation Voltage
GE
GE
V
CE(sat)
--
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
720
100
25
--
--
--
pF
pF
pF
ies
V
= 30V V = 0V,
, GE
CE
Output Capacitance
oes
res
f = 1MHz
Reverse Transfer Capacitance
Switching Characteristics
t
t
t
t
Turn-On Delay Time
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
17
27
--
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
nC
nC
nC
nH
d(on)
Rise Time
r
Turn-Off Delay Time
Fall Time
60
130
150
--
V
R
= 300 V, I = 12A,
C
d(off)
f
CC
= 23Ω, V = 15V,
70
G
GE
Inductive Load, T = 25°C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
115
135
250
23
C
on
off
--
400
--
ts
t
t
t
t
d(on)
r
32
--
Turn-Off Delay Time
Fall Time
100
220
205
320
525
49
200
250
--
V
= 300 V, I = 12A,
C
d(off)
f
CC
R
= 23Ω, V = 15V,
G
GE
Inductive Load, T = 125°C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
C
on
off
ts
--
800
80
17
22
--
Q
Q
Q
g
V
V
= 300 V, I = 12A,
CE
GE
C
11
ge
gc
= 15V
14
L
Measured 5mm from PKG
7.5
e
Electrical Characteristics of DIODE
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
--
Typ.
1.4
1.3
42
Max.
1.7
--
Units
T
T
T
T
T
T
T
T
=
25°C
= 100°C
25°C
= 100°C
25°C
= 100°C
25°C
= 100°C
C
C
C
C
C
C
C
C
V
Diode Forward Voltage
I
= 12A
F
V
FM
--
=
--
60
--
t
Diode Reverse Recovery Time
ns
A
rr
--
80
=
--
3.5
5.6
80
6.0
--
Diode Peak Reverse Recovery
Current
I = 12A,
di/dt=200A/us
F
I
rr
--
=
--
180
--
Q
Diode Reverse Recovery Charge
nC
rr
--
220
©2002 Fairchild Semiconductor Corporation
SGP23N60UFD Rev. A1
100
80
60
40
20
0
50
40
30
20
10
0
Common Emitter
VGE = 15V
Common Emitter
20V
℃
TC = 25
℃
℃
TC
= 25
15V
12V
T
C = 125
VGE = 10V
0
2
4
6
8
0.5
1
10
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
4
20
VCC = 300V
Load Current : peak of square wave
Common Emitter
VGE = 15V
3
2
1
0
15
10
5
24A
12A
IC = 6A
Duty cycle : 50%
℃
T
C = 100
Power Dissipation = 21W
0
0
30
60
90
120
150
0.1
1
10
100
1000
℃
Case Temperature, TC
[
]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Fig 4. Load Current vs. Frequency
Temperature at Variant Current Level
20
20
16
12
8
Common Emitter
Common Emitter
℃
C = 125
T
℃
TC = 25
16
12
8
24A
24A
4
4
12A
8
12A
8
IC = 6A
IC = 6A
0
0
0
4
12
16
20
0
4
12
16
20
Gate - Emitter Voltage, VGE [V]
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. V
Fig 6. Saturation Voltage vs. V
GE
GE
©2002 Fairchild Semiconductor Corporation
SGP23N60UFD Rev. A1
1200
1000
800
600
400
200
0
200
100
Common Emitter
VGE = 0V, f = 1MHz
Common Emitter
±
15V
VCC = 300V, VGE
IC = 12A
=
℃
TC = 25
Ton
Tr
℃
℃
TC
= 25
Cies
TC = 125
Coes
Cres
10
1
10
Collector - Emitter Voltage, VCE [V]
30
1
10
Gate Resistance, RG [Ω]
100
200
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
1000
Common Emitter
±
15V
V
CC = 300V, VGE
=
I
C = 12A
℃
℃
TC
= 25
Eoff
Eon
T
C = 125
Toff
Eon
Eoff
Tf
Toff
100
Common Emitter
100
50
±
15V
VCC = 300V, VGE
C = 12A
=
I
Tf
℃
℃
TC
= 25
T
C = 125
30
1
10
Gate Resistance, RG [Ω]
100
200
1
10
Gate Resistance, RG [Ω]
100
200
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
200
1000
Common Emitter
Common Emitter
±
15V
VCC = 300V, VGE
=
±
15V
V
CC = 300V, VGE
=
RG = 23Ω
R
G = 23Ω
100
℃
℃
TC
TC = 125
= 25
℃
℃
TC
= 25
T
C = 125
Toff
Tf
Ton
Toff
100
50
Tr
Tf
10
4
8
12
16
20
24
4
8
12
16
20
24
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
SGP23N60UFD Rev. A1
15
12
9
1000
100
10
Common Emitter
RL = 25 Ω
℃
TC = 25
Eoff
Eon
300 V
6
200 V
VCC = 100 V
Common Emitter
Eon
Eoff
±
15V
VCC = 300V, VGE
=
3
RG = 23Ω
℃
℃
TC
TC = 125
= 25
0
4
8
12
16
20
24
0
10
20
30
40
50
Collector Current, IC [A]
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
300
200
100
IC MAX. (Pulsed)
100
50us
100us
IC MAX. (Continuous)
Single Nonrepetitive
10
10
1
㎳
1
DC Operation
1
℃
Pulse TC = 25
Curves must be derated
linearly with increase
in temperature
Safe Operating Area
℃
VGE = 20V, TC = 100
0.1
0.1
0.3
1
10
100
1000
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
5
1
0.5
0.2
0.1
0.1
0.05
Pdm
0.02
0.01
t1
t2
0.01
single pulse
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + TC
0.005
10-5
10-4
10-3
10-2
10-1
100
101
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2002 Fairchild Semiconductor Corporation
SGP23N60UFD Rev. A1
100
10
1
℃
℃
TC
= 25
VR = 200V
IF = 12A
TC = 100
100
10
1
℃
℃
TC
TC = 100
= 25
100
1000
0
1
2
3
di/dt [A/us]
Forward Voltage Drop, VFM [V]
Fig 18. Forward Characteristics
Fig 19. Reverse Recovery Current
100
600
VR = 200V
IF = 12A
VR = 200V
IF = 12A
℃
℃
TC
TC = 100
=
25
℃
℃
TC
TC = 100
= 25
500
400
300
200
100
0
80
60
40
20
0
100
1000
100
1000
di/dt [A/us]
di/dt [A/us]
Fig 20. Stored Charge
Fig 21. Reverse Recovery Time
©2002 Fairchild Semiconductor Corporation
SGP23N60UFD Rev. A1
Mechanical Dimensions
TO - 220
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
SGP23N60UFD Rev. A1
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FAST®
FASTr™
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HiSeC™
I2C™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
SLIENT SWITCHER® UHC™
SMART START™
SPM™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
UltraFET®
VCX™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™ TinyLogic™
Quiet Series™ TruTranslation™
FACT Quiet Series™ MicroPak™
STAR*POWER is used under license
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. H5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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