RURP1560-F085 [ONSEMI]
600 V、15 A、1.24 V、TO-220(2 引脚)超快速整流器;型号: | RURP1560-F085 |
厂家: | ONSEMI |
描述: | 600 V、15 A、1.24 V、TO-220(2 引脚)超快速整流器 二极管 |
文件: | 总7页 (文件大小:590K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
RURP1560-F085
15A, 600V Ultrafast Rectifier
Features
15A, 600V Ultrafast Rectifier
•
•
•
•
High Speed Switching ( trr=52ns(Typ.) @ IF=15A )
Low Forward Voltage( VF=1.5V(Max.) @ IF=15A )
Avalanche Energy Rated
The RURP1560-F085 is an ultrafast diode with soft
recovery characteristics(trr < 70ns). It has a low forward
voltage drop and is of planar, silicon nitride assivated,
ion-implanted, epitaxial construction.
This device is intended for use as an energy steering /
clamping diode and rectifier in a variety of switching
power supplies and other power switching applications.
Its low stored charge and ultrafast recovery with soft
recovery characteristics minimizes ringing and electrical
noise in many power switching circuits, thus reducing
power loss in the switching transistor.
AEC-Q101 Qualified
Applications
•
•
•
•
Automotive DCDC converter
Automotive On Board Charger
Switching Power Supply
Power Switching Circuits
Pin Assignments
TO-220-2L
1
2
1. Cathode
2. Anode
Cathode
Anode
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Parameter
Ratings
Units
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
600
600
V
V
Working Peak Reverse Voltage
DC Blocking Voltage
600
V
IF(AV)
IFSM
EAVL
Average Rectified Forward Current
Non-repetitive Peak Surge Current
Avalanche Energy (1A, 40mH)
Operating Junction and Storage Temperature
@ TC = 25°C
15
A
200
A
20
mJ
°C
T
J, TSTG
- 55 to +175
Thermal Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Max
1
Units
°C/W
°C/W
RθJC
RθJA
Maximum Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
85
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
RURP1560
RURP1560-F085
TO-220-2L
-
-
50
Publication Order Number:
RURP1560-F085/D
©2013 Semiconductor Components Industries, LLC.
August-2017, Rev. 3
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min. Typ. Max Units
IR
Instantaneous Reverse Current VR = 600V
TC = 25 °C
-
-
-
-
100
1
uA
TC = 175 °C
mA
1
VFM
Instantaneous Forward Voltage IF = 15A
TC = 25 °C
TC = 175 °C
-
-
1.24
1.0
1.5
1.2
V
V
2
trr
Reverse Recovery Time
Reverse Recovery Time
IF =1A, di/dt = 100A/μs,
VCC= 390V
T
C = 25 °C
-
32
55
ns
IF =15A, di/dt = 100A/μs,
VCC= 390V
-
-
52
220
70
-
ns
ns
T
C = 25 °C
TC = 175 °C
C = 25 °C
ta
tb
IF =15A, di/dt = 100A/μs,
VCC= 390V
T
-
-
-
28
24
73
-
-
-
ns
ns
nC
Qrr
Reverse Recovery Charge
Avalanche Energy
EAVL
IAV=1.0A,L = 40mH
20
-
-
mJ
Notes:
1. Pulse : Test Pulse width = 300μs, Duty Cycle = 2%
2. Guaranteed by design
Test Circuit and Waveforms
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2
Typical Performance Characteristics
Figure 2. Typical Reverse Current vs.
Reverse Voltage
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
1000
400
TC = 175oC
100
100
10
TC = 175oC
TC = 125oC
TC = 125oC
1
10
0.1
TC = 25oC
0.01
1
TC = 25oC
1E-3
1E-4
0.1
0.0
0
100
200
300
400
500
600
0.5
1.0
1.5
2.0
2.5
Forward Voltage, VF [V]
Reverse Voltage, VR [V]
Figure 3.Typical Junction Capacitance
Figure 4. Typical Reverse Recovery Time
vs. di/dt
250
300
Typical Capacitance
at 10V = 63pF
IF = 15A
200
150
100
50
240
TC = 175oC
180
120
TC = 125oC
60
TC = 25oC
0
0.1
0
100
1
10
100
200
300
400
500
Reverse Voltage, VR [V]
di/dt [A/μs]
Figure 6. Forward Current Derating Curve
Figure 5. Typical Reverse Recovery
Current vs. di/dt
25
80
70
60
50
40
30
20
10
0
IF = 15A
TC = 175oC
20
TC = 125oC
15
10
5
TC = 25oC
0
100
25
50
75
100
125o 150
175
200
300
di/dt [A/μs]
400
500
Case temperature, TC [ C]
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3
Typical Performance Characteristics (Continued)
Figure 7. Reverse Recovery Charge
1600
1400
1200
1000
800
600
400
200
0
IF = 15A
TC = 175oC
TC = 125oC
TC = 25oC
100
200
300
di/dt [A/μs]
400
500
Figure 8. Transient Thermal Response Curve
2
1
D=0.5
0.2
0.1
0.05
0.02
0.1
0.01
PDM
t1
t2
0.01
single pulse
* Notes :
o
1. Z
(t) = 1 C/W Typ.
thJC
2. Duty Factor, D=t /t
1 2
3. T
JM
- T = P
C
* Z
(t)
DM thJC
101
0.001
10-5
10-4
10-3
10-2
10-1
100
102
t , SquareWave Pulse Duration [sec]
1
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4
Mechanical Dimensions
4.036
3.636
0.36
10.360
10.109
A
M
B A
C
8.89
6.86
B
2.860
2.660
1.400
1.146
6.477
6.121
7°
3°
3
12.878
12.190
15.215
14.757
8.787
8.587
5°
3°
5°
3°
1
2
0.60 MAX
2.755
2.555
13.894
12.941
3.962
3.720
1.65
1.25
1.91
0.889
0.787
M
0.36
C A B
0.457
0.357
2.640
2.440
5.180
4.980
NOTES:
5°
3°
5°
3°
A. PACKAGE REFERENCE: JEDEC TO220
VARIATION AC.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-2009.
4.672
4.472
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DRAWING FILE NAME:
TO220B02REV5FAIRCHILD
Dimensions in Millimeters
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5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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❖
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