RURP1560-F085 [ONSEMI]

600 V、15 A、1.24 V、TO-220(2 引脚)超快速整流器;
RURP1560-F085
型号: RURP1560-F085
厂家: ONSEMI    ONSEMI
描述:

600 V、15 A、1.24 V、TO-220(2 引脚)超快速整流器

二极管
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RURP1560-F085  
15A, 600V Ultrafast Rectifier  
Features  
15A, 600V Ultrafast Rectifier  
High Speed Switching ( trr=52ns(Typ.) @ IF=15A )  
Low Forward Voltage( VF=1.5V(Max.) @ IF=15A )  
Avalanche Energy Rated  
The RURP1560-F085 is an ultrafast diode with soft  
recovery characteristics(trr < 70ns). It has a low forward  
voltage drop and is of planar, silicon nitride assivated,  
ion-implanted, epitaxial construction.  
This device is intended for use as an energy steering /  
clamping diode and rectifier in a variety of switching  
power supplies and other power switching applications.  
Its low stored charge and ultrafast recovery with soft  
recovery characteristics minimizes ringing and electrical  
noise in many power switching circuits, thus reducing  
power loss in the switching transistor.  
AEC-Q101 Qualified  
Applications  
Automotive DCDC converter  
Automotive On Board Charger  
Switching Power Supply  
Power Switching Circuits  
Pin Assignments  
TO-220-2L  
1
2
1. Cathode  
2. Anode  
Cathode  
Anode  
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Ratings  
Units  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
600  
600  
V
V
Working Peak Reverse Voltage  
DC Blocking Voltage  
600  
V
IF(AV)  
IFSM  
EAVL  
Average Rectified Forward Current  
Non-repetitive Peak Surge Current  
Avalanche Energy (1A, 40mH)  
Operating Junction and Storage Temperature  
@ TC = 25°C  
15  
A
200  
A
20  
mJ  
°C  
T
J, TSTG  
- 55 to +175  
Thermal Characteristics  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Max  
1
Units  
°C/W  
°C/W  
RθJC  
RθJA  
Maximum Thermal Resistance, Junction to Case  
Maximum Thermal Resistance, Junction to Ambient  
85  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
Tape Width  
Quantity  
RURP1560  
RURP1560-F085  
TO-220-2L  
-
-
50  
Publication Order Number:  
RURP1560-F085/D  
©2013 Semiconductor Components Industries, LLC.  
August-2017, Rev. 3  
Electrical Characteristics  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Conditions  
Min. Typ. Max Units  
IR  
Instantaneous Reverse Current VR = 600V  
TC = 25 °C  
-
-
-
-
100  
1
uA  
TC = 175 °C  
mA  
1
VFM  
Instantaneous Forward Voltage IF = 15A  
TC = 25 °C  
TC = 175 °C  
-
-
1.24  
1.0  
1.5  
1.2  
V
V
2
trr  
Reverse Recovery Time  
Reverse Recovery Time  
IF =1A, di/dt = 100A/μs,  
VCC= 390V  
T
C = 25 °C  
-
32  
55  
ns  
IF =15A, di/dt = 100A/μs,  
VCC= 390V  
-
-
52  
220  
70  
-
ns  
ns  
T
C = 25 °C  
TC = 175 °C  
C = 25 °C  
ta  
tb  
IF =15A, di/dt = 100A/μs,  
VCC= 390V  
T
-
-
-
28  
24  
73  
-
-
-
ns  
ns  
nC  
Qrr  
Reverse Recovery Charge  
Avalanche Energy  
EAVL  
IAV=1.0A,L = 40mH  
20  
-
-
mJ  
Notes:  
1. Pulse : Test Pulse width = 300μs, Duty Cycle = 2%  
2. Guaranteed by design  
Test Circuit and Waveforms  
www.onsemi.com  
2
Typical Performance Characteristics  
Figure 2. Typical Reverse Current vs.  
Reverse Voltage  
Figure 1. Typical Forward Voltage Drop  
vs. Forward Current  
1000  
400  
TC = 175oC  
100  
100  
10  
TC = 175oC  
TC = 125oC  
TC = 125oC  
1
10  
0.1  
TC = 25oC  
0.01  
1
TC = 25oC  
1E-3  
1E-4  
0.1  
0.0  
0
100  
200  
300  
400  
500  
600  
0.5  
1.0  
1.5  
2.0  
2.5  
Forward Voltage, VF [V]  
Reverse Voltage, VR [V]  
Figure 3.Typical Junction Capacitance  
Figure 4. Typical Reverse Recovery Time  
vs. di/dt  
250  
300  
Typical Capacitance  
at 10V = 63pF  
IF = 15A  
200  
150  
100  
50  
240  
TC = 175oC  
180  
120  
TC = 125oC  
60  
TC = 25oC  
0
0.1  
0
100  
1
10  
100  
200  
300  
400  
500  
Reverse Voltage, VR [V]  
di/dt [A/μs]  
Figure 6. Forward Current Derating Curve  
Figure 5. Typical Reverse Recovery  
Current vs. di/dt  
25  
80  
70  
60  
50  
40  
30  
20  
10  
0
IF = 15A  
TC = 175oC  
20  
TC = 125oC  
15  
10  
5
TC = 25oC  
0
100  
25  
50  
75  
100  
125o 150  
175  
200  
300  
di/dt [A/μs]  
400  
500  
Case temperature, TC [ C]  
www.onsemi.com  
3
Typical Performance Characteristics (Continued)  
Figure 7. Reverse Recovery Charge  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
IF = 15A  
TC = 175oC  
TC = 125oC  
TC = 25oC  
100  
200  
300  
di/dt [A/μs]  
400  
500  
Figure 8. Transient Thermal Response Curve  
2
1
D=0.5  
0.2  
0.1  
0.05  
0.02  
0.1  
0.01  
PDM  
t1  
t2  
0.01  
single pulse  
* Notes :  
o
1. Z  
(t) = 1 C/W Typ.  
thJC  
2. Duty Factor, D=t /t  
1 2  
3. T  
JM  
- T = P  
C
* Z  
(t)  
DM thJC  
101  
0.001  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
102  
t , SquareWave Pulse Duration [sec]  
1
www.onsemi.com  
4
Mechanical Dimensions  
4.036  
3.636  
0.36  
10.360  
10.109  
A
M
B A  
C
8.89  
6.86  
B
2.860  
2.660  
1.400  
1.146  
6.477  
6.121  
7°  
3°  
3
12.878  
12.190  
15.215  
14.757  
8.787  
8.587  
5°  
3°  
5°  
3°  
1
2
0.60 MAX  
2.755  
2.555  
13.894  
12.941  
3.962  
3.720  
1.65  
1.25  
1.91  
0.889  
0.787  
M
0.36  
C A B  
0.457  
0.357  
2.640  
2.440  
5.180  
4.980  
NOTES:  
5°  
3°  
5°  
3°  
A. PACKAGE REFERENCE: JEDEC TO220  
VARIATION AC.  
B. ALL DIMENSIONS ARE IN MILLIMETERS.  
C. DIMENSION AND TOLERANCE AS PER ASME  
Y14.5-2009.  
4.672  
4.472  
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,  
MOLD FLASH AND TIE BAR PROTRUSIONS.  
E. DRAWING FILE NAME:  
TO220B02REV5FAIRCHILD  
Dimensions in Millimeters  
www.onsemi.com  
5
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
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