RURG3060CC-F085 [ONSEMI]
600V，30A，1.26V，TO-247，Ultrafast 双整流器;
| 型号： | RURG3060CC-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 600V，30A，1.26V，TO-247，Ultrafast 双整流器 超快软恢复二极管 快速软恢复二极管 局域网 |
| 文件： | 总7页 (文件大小：484K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ultrafast Rectifier
30 A, 600 V
RURG3060CC-F085
Description
The RURG3060−F085 is an dual ultrafast diode with soft recovery
characteristics (trr < 80 ns). It has low forward voltage drop and is
silicon nitride passivated ionimplanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping diode
and rectifier in a variety of switching power supplies and other power
switching applications. Its low stored charge and ultrafast recovery
with soft recovery characteristic minimizes ringing and electrical
noise in many power switching circuits, thus reducing power loss in
the switching transistors.
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CATHODE
(BOTTOM SIDE METAL)
ANODE 1
CATHODE
ANODE 2
Features
• High Speed Switching (t = 60 ns (Typ.) @ I = 30 A)
rr
F
TO−247−3LD
CASE 340CK
• Low Forward Voltage (V = 1.5 V (Max) @ I = 30 A)
F
F
• Avalanche Energy Rated
• AEC−Q101Qualified and PPAP Capable
• This is a Pb−Free Device
K
Applications
• Automotive DC/DC Converter
• Automotive On Board Charger
• Switching Power Supply
• Power Switching Circuits
A
A
2
1
MARKING DIAGRAM
$Y&Z&3&K
RURG3060C
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
RURG3060C
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
February, 2020 − Rev. 4
RURG3060CC−F085/D
RURG3060CC−F085
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Ratings
Unit
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
RWM
600
V
600
V
V
R
600
V
Average Rectified Forward Current (T = 25°C)
I
30
90
A
C
F(AV)
Non−repetitive Peak Surge Current (Halfwave 1 Phase 50 Hz)
Avalanche Energy (1 A, 40 mH)
I
A
FSM
E
20
mJ
°C
AVL
Operating Junction and Storage Temperature
T
T
−55 to +175
J, STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
PACKAGE MARKING AND ORDERING INFORMATION
Device
Device Marking
Package
Tube
Quantity
RURG3060CC−F085
RURG3060C
TO−247
−
30
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Parameter
Maximum Thermal Resistance, Junction to Case (Single Anode)
Maximum Thermal Resistance, Junction to Ambient
Symbol
Max
1
Unit
°C/W
°C/W
R
q
JC
R
45
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Conditions
Min
−
Typ
Max
250
1.0
1.5
1.3
55
Unit
mA
mA
V
Instantaneous Reverse Current
I
R
V
= 600 V
T
C
T
C
T
C
T
C
T
C
= 25°C
−
−
R
= 175°C
= 25°C
= 175°C
= 25°C
−
Instantaneous Forward Voltage
Reverse Recovery Time
V
FM
I = 30 A
F
−
1.26
1.06
35
(Note 1)
−
V
t
rr
−
ns
I = 1 A, di/dt = 100 A/ms,
F
(Note 2)
V
CC
= 390 V
I = 30 A, di/dt = 100 A/ms,
CC
T
C
T
C
T
C
= 25°C
= 175°C
= 25°C
−
−
60
231
31
29
92
−
80
−
ns
ns
F
V
= 390 V
Reverse Recovery Time
t
t
I = 30 A, di/dt = 100 A/ms,
−
−
ns
a
F
CC
V
= 390 V
−
−
ns
b
Reverse Recovery Charge
Avalanche Energy
Q
−
−
nC
mJ
rr
E
AVL
I
AV
= 1.0 A, L = 40 mH
20
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Test Pulse Width = 300 ms, Duty Cycle = 3%
2. Guaranteed by design.
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2
RURG3060CC−F085
TEST CIRCUIT AND WAVEFORMS
V
AMPLITUDE AND
GE
G
R
CONTROL dI /dt
F
L
t AND t Control I
1
2
F
dI
dt
DUT CURRENT
SENSE
t
rr
F
I
F
R
t
a
t
b
G
+
0
V
DD
V
GE
−
IGBT
t
1
0.25 I
RM
t
2
I
RM
Figure 2. trr Waveforms and Definitions
Figure 1. trr Test Circuit
I
= 1 A
MAX
L = 40 mH
R < 0.1 W
2
E
= 1/2LI [V
/(V
− V )]
R(AVL
AVL
1
R(AVL)
CES
R(AVL) DD
Q = IGBT (BV
> DUT V
)
V
AVL
R
L
+
V
I
L
CURRENT
SENSE
I
L
DD
I V
Q
1
V
DD
DUT
−
t
t
1
t
2
t
0
Figure 4. Avalanche Current and Voltage
Waveforms
Figure 3. Avalanche Energy Test Circuit
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3
RURG3060CC−F085
TYPICAL PERFORMANCE CHARACTERISTICS (Single Anode)
1000
400
100
T
= 175°C
C
100
10
1
T
C
= 125°C
T
C
= 175°C
10
T
C
= 125°C
0.1
1
0.01
1E−3
1E−4
T
= 25°C
T = 25°C
C
C
0.1
0.5
2.0
0.1
1.0
1.5
400 500 600
Reverse Voltage, V [V]
0
100
200
300
Forward Voltage, V [V]
F
R
Figure 6. Typical Reverse Current
vs. Reverse Voltage
Figure 5. Typical Forward Voltage Drop
vs. Forward Current
250
400
I
F
= 30 A
Typical Capacitance
at 10 V = 103 pF
200
150
T
C
= 175°C
300
200
100
T
= 125°C
C
100
50
T
= 25°C
C
0
400
500
100
100
200
300
1
10
0.1
Reverse Voltage, V [V]
R
di/dt [A/ms]
Figure 7. Typical Junction Capacitance
Figure 8. Typical Reverse Recovery Time
vs. di/dt
35
30
40
30
20
10
0
T
= 175°C
25
20
15
10
C
T
= 125°C
C
5
0
T
= 25°C
C
I
= 30 A
F
175
125 150
Case Temperature, T [°C]
500
25
50
75
100
100
200
300
di/dt [A/ms]
400
C
Figure 10. Forward Current Derating Curve
Figure 9. Typical Reverse Recovery Current
vs. di/dt
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4
RURG3060CC−F085
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
2500
I
F
= 30 A
T
= 175°C
2000
1500
C
T
= 125°C
C
1000
T
C
= 25°C
500
0
400
500
200
300
100
di/dt [A/ms]
Figure 11. Reverse Recovery Charge
2
1
D = 0.5
P
DM
t
1
0.2
0.1
t
2
0.1
0.05
0.02
0.01
*Notes:
1. Z (t) = 1.0°C/W Typ.
q
JC
2. Duty Factor, D = t /t
1
2
JC
3. T − T = P
* Z (t)
q
JM
C
DM
Single Pulse
0.001
2
−2
−1
1
−3
0
−4
−5
10
10
10
10
10
10
10
10
t , Square Wave Pulse Duration [sec]
1
Figure 12. Transient Thermal Response Curve
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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相关型号：
RURG3060CC_F085
Rectifier Diode, Avalanche, 1 Phase, 2 Element, 15A, 600V V(RRM), Silicon, TO-247AB, TO-247, 3 PIN
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RURG3060CC_NL
Rectifier Diode, Avalanche, 1 Phase, 2 Element, 30A, 600V V(RRM), Silicon, TO-247
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