RHRG3060CC [ONSEMI]
60A，600V，Hyperfast 双二极管;
| 型号： | RHRG3060CC |
| 厂家： | 
ONSEMI |
| 描述： | 60A，600V，Hyperfast 双二极管 软恢复二极管 超快速软恢复二极管 局域网 |
| 文件： | 总6页 (文件大小：306K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Hyperfast Dual Diode
60 A, 400 V - 600 V
RHRG3060CC, RHRG3040CC
Description
The RHRG3060CC, RHRG3040CC is a hyperfast dual diode
with soft recovery characteristics. It has the half recovery time
of ultrafast diodes and is silicon nitride passivated ionimplanted
epitaxial planar construction
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These devices are intended to be used as freewheeling/ clamping
diodes and diodes in a variety of switching power supplies and other
power switching applications. Their low stored charge and hyperfast
soft recovery minimize ringing and electrical noise in many power
switching circuits reducing power loss in the switching transistors.
CATHODE
(BOTTOM SIDE METAL)
ANODE 2
CATHODE
ANODE 1
Features
TO−247−3LD
CASE 340CK
• Hyperfast Recovery t = 45 ns (@ I = 30 A)
rr
F
• Max Forward Voltage, V = 2.1 V (@ T = 25°C)
F
C
• High Reverse Voltage and High Reliability
• Avalanche Energy Rated
K
• These Devices are Pb−Free and are RoHS Compliant
Applications
A
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
A
2
1
MARKING DIAGRAM
$Y&Z&3&K
RHRG30XXC
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
RHRG30XXC
XX
= Specific Device Code
= 60, 40
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
February, 2020 − Rev. 3
RHRG3060CC/D
RHRG3060CC, RHRG3040CC
ABSOLUTE MAXIMUM RATING (Per Leg) (T = 25°C, unless otherwise specified)
J
Description
Peak Repetitive Reverse Voltage
Symbol
RHRG3060CC
RHRG3040CC
Unit
V
V
600
600
400
400
RRM
RWM
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
V
R
600
400
V
Average Rectified Forward Current (T = 120°C)
I
)
30
30
A
C
F(AV
Repetitive Peak Surge Current (Square Wave, 20 kHz)
Non−repetitive Peak Surge Current (Halfwave, 1 Phase, 60 Hz)
Maximum Power Dissipation
I
70
70
A
FRM
I
325
325
A
FSM
P
D
125
125
W
mJ
°C
Avalanche Energy (See Figures 10 and 11)
Operating and Storage Temperature
E
20
20
AVL
T
, T
−65 to 175
−65 to 175
STG
J
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
RHRG3060CC
RHRG3040CC
Top Mark
RHRG3060C
RHRG3040C
Package
TO−247−3L
TO−247−3L
Shipping
450 / Tube
450 / Tube
ELECTRICAL SPECIFICATIONS (Per Leg) (T = 25°C, unless otherwise specified)
J
RHRG3060CC
RHRG3040CC
Unit
Unit
V
Min
−
Typ
−
Max
2.1
1.7
−
Min
Typ
−
Max
Characteristic
Symbol
Test Conditions
Instantaneous Forward Voltage
(Pulse Width = 300 ms,
Duty Cycle = 2%)
V
F
I = 30 A
−
−
−
−
−
−
−
−
−
2.1
1.7
250
−
F
I = 30 A, T = 150°C
F
−
−
−
V
C
Instantaneous Reverse Current
I
R
V
= 400 V
= 600 V
−
−
−
mA
mA
mA
mA
ns
R
V
R
V
R
V
R
−
−
250
−
−
= 400 V, T = 150°C
−
−
−
1.0
−
C
= 600 V, T = 150°C
−
−
1.0
40
45
−
−
C
Reverse Recovery Time
(See Figure 9),
Summation of ta + tb.
T
rr
−
−
−
40
45
−
I = 1 A, dI /dt = 200 A/ms
F
F
I = 30 A, dI /dt = 200 A/ms
−
−
−
ns
F
F
Time to Reach Peak Reverse
Current (See Figure 9).
t
t
I = 30 A, dI /dt = 200 A/ms
−
22
22
ns
a
F
F
Time from Peak I
to Projected
RM
I = 30 A, dI /dt = 200 A/ms
−
18
−
−
18
−
ns
RM
b
F
F
Zero Crossing of I
Based on
a Straight Line from Peak I
RM
through 25% of I
(See Figure 9).
RM
Reverse Recovery Charge
Junction Capacitance
Q
I = 30 A, dI /dt = 200 A/ms
−
−
−
100
85
−
−
−
−
−
−
100
85
−
−
−
nC
pF
rr
F
F
C
V = 10 V, I = 0 A
R F
J
Thermal Resistance Junction
to Case
R
1.2
1.2
°C/W
q
JC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
RHRG3060CC, RHRG3040CC
TYPICAL PERFORMANCE CURVES
300
100
2000
175°C
100°C
100
10
100°C
175°C
25°C
10
1
1
0.1
0.01
25°C
4
0
1
2
3
0
200
300
400
500
600
100
V , Forward Voltage (V)
F
V , Reverse Voltage (V)
R
Figure 2. Reverse Current vs. Reverse Voltage
Figure 1. Forward Current vs. Forward Voltage
50
40
30
100
T
C
= 25°C, dI /dt = 200 A/ms
T
C
= 100°C, dI /dt = 200 A/ms
F
F
80
T
rr
T
rr
60
40
20
t
a
t
a
20
0
t
b
t
b
10
0
1
10
I , Forward Current (A)
30
30
1
10
I , Forward Current (A)
F
F
Figure 4. Trr, ta and tb Curves vs. Forward Current
Figure 3. Trr, ta and tb Curves vs. Forward Current
150
125
100
75
30
T
C
= 175°C, dI /dt = 200 A/ms
F
25
20
15
DC
T
rr
SQ. WAVE
t
a
10
5
50
25
0
t
b
0
30
125
150
175
1
10
I , Forward Current (A)
75
100
F
T , Case Temperature (°C)
C
Figure 5. Trr, ta and tb Curves vs. Forward Current
Figure 6. Current Derating Curve
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3
RHRG3060CC, RHRG3040CC
TYPICAL PERFORMANCE CURVES (continued)
150
125
100
75
50
25
0
200
0
100
150
50
V , Reverse Voltage (V)
R
Figure 7. Junction Capacitance vs. Reverse Voltage
TEST CIRCUITS AND WAVEFORMS
V
AMPLITUDE AND
GE
G
R
CONTROL dI /dt
F
L
t AND t Control I
1
2
F
dI
dt
T
rr
F
I
F
t
b
t
a
DUT CURRENT
SENSE
0
R
G
+
0.25 I
V
DD
RM
V
GE
−
IGBT
t
I
FIGURE
1
RM
t
2
Figure 9. Trr Waveforms and Definitions
Figure 8. Trr Test Circuit
I
= 1 A
MAX
L = 40 mH
R < 0.1 W
2
E
= 1/2LI [V
/(V
− V )]
R(AVL
AVL
1
R(AVL)
CES
R(AVL) DD
V
AVL
Q = IGBT (BV
> DUT V
)
R
L
I
L
+
V
I
L
CURRENT
SENSE
DD
I V
Q
1
V
DD
DUT
−
t
t
1
t
2
t
0
Figure 11. Avalanche Current and Voltage Waveforms
Figure 10. Avalanche Energy Test Circuit
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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