RHRG1560CC [ONSEMI]
30A，600V，Hyperfast 双二极管;
| 型号： | RHRG1560CC |
| 厂家： | 
ONSEMI |
| 描述： | 30A，600V，Hyperfast 双二极管 软恢复二极管 超快速软恢复二极管 局域网 PC |
| 文件： | 总6页 (文件大小：308K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Hyperfast Dual Diode
30 A, 400 V - 600 V
RHRG1560CC, RHRG1540CC
Description
The RHRG1560CC, RHRG1540CC is a hyperfast dual diode with
soft recovery characteristics. It has the half recovery time of ultrafast
diodes and is silicon nitride passivated ionimplanted epitaxial planar
construction.
www.onsemi.com
These devices are intended to be used as freewheeling/clamping
diodes and diodes in a variety of switching power supplies and other
power switching applications. Their low stored charge and hyperfast
soft recovery minimize ringing and electrical noise in many power
switching circuits reducing power loss in the switching transistors.
CATHODE
(BOTTOM SIDE METAL)
ANODE 2
CATHODE
ANODE 1
Features
TO−247−3LD
CASE 340CK
• Hyperfast Recovery t = 40 ns (@ I = 15 A)
rr
F
• Max Forward Voltage, V = 2.1 V (@ T = 25°C)
F
C
• 400 V, 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
MARKING DIAGRAM
• These Devices are Pb−Free and are RoHS Compliant
Applications
$Y&Z&3&K
RHRG15XXC
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
RHRG15XXC
XX
= Specific Device Code
= 60, 40
K
A
1
A
2
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
February, 2020 − Rev. 2
RHRG1560CC/D
RHRG1560CC, RHRG1540CC
ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise specified) (Per Leg)
J
Description
Peak Repetitive Reverse Voltage
Symbol
RHRG1560CC
RHRG1540CC
Unit
V
V
600
600
400
400
RRM
RWM
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
V
R
600
400
V
Average Rectified Forward Current (T = 140°C)
I
)
15
15
A
C
F(AV
Repetitive Peak Surge Current (Square Wave, 20 kHz)
Non−repetitive Peak Surge Current (Halfwave, 1 Phase, 60 Hz)
Maximum Power Dissipation
I
30
30
A
FRM
I
200
200
A
FSM
P
D
100
100
W
mJ
°C
Avalanche Energy (See Figures 10 and 11)
Operating and Storage Temperature
E
20
20
AVL
T
, T
−65 to 175
−65 to 175
STG
J
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
RHRG1560CC
RHRG1540CC
Top Mark
RHRG1560C
RHRG1540C
Package
TO−247−3L
TO−247−3L
Shipping
450 / Tube
450 / Tube
ELECTRICAL SPECIFICATIONS (T = 25°C, unless otherwise specified) (Per Leg)
J
RHRG1560CC
RHRG1540CC
Unit
Unit
V
Min
−
Typ
−
Max
2.1
1.7
−
Min
Typ
−
Max
Characteristic
Symbol
Test Conditions
Instantaneous Forward Voltage
(Pulse Width = 300 ms,
Duty Cycle = 2%)
V
F
I = 15 A
−
−
−
−
−
−
−
−
−
2.1
1.7
100
−
F
I = 15 A, T = 150°C
F
−
−
−
V
C
Instantaneous Reverse Current
I
R
V
= 400 V
= 600 V
−
−
−
mA
mA
mA
mA
ns
R
V
R
V
R
V
R
−
−
100
−
−
= 400 V, T = 150°C
−
−
−
500
−
C
= 600 V, T = 150°C
−
−
500
35
40
−
−
C
Reverse Recovery Time
(See Figure 9),
Summation of ta + tb.
T
rr
−
−
−
35
40
−
I = 1 A, dI /dt = 100 A/ms
F
F
I = 15 A, dI /dt = 100 A/ms
−
−
−
ns
F
F
Time to Reach Peak Reverse
Current (See Figure 9).
t
t
I = 15 A, dI /dt = 100 A/ms
−
20
20
ns
a
F
F
Time from Peak I
to Projected
Based on
I = 15 A, dI /dt = 100 A/ms
−
15
−
−
15
−
ns
RM
b
F
F
Zero Crossing of I
RM
a Straight Line from Peak I
through 25% of IRM
(See Figure 9).
RM
Reverse Recovery Charge
Junction Capacitance
Q
I = 15 A, dI /dt = 100 A/ms
−
−
−
40
60
−
−
−
−
−
−
40
60
−
−
−
nC
pF
rr
F
F
C
V = 10 V, I = 0 A
R F
J
Thermal Resistance Junction
to Case
R
1.5
1.5
°C/W
q
JC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
RHRG1560CC, RHRG1540CC
TYPICAL PERFORMANCE CURVES
100
10
1000
100
175°C
100°C
100°C
10
1
175°C
0.1
0.01
25°C
25°C
1
0.5
3
0.5
2
2.5
0
1.5
1
300
400
500
600
0
100
200
V , Forward Voltage (V)
F
V , Reverse Voltage
R
Figure 2. Reverse Current vs. Reverse Voltage
Figure 1. Forward Current vs. Forward Voltage
50
40
30
100
80
T
C
= 100°C, dI /dt = 100 A/ms
T
C
= 25°C, dI /dt = 100 A/ms
F
F
T
rr
T
rr
60
t
a
40
20
20
10
t
a
t
b
t
b
0
0
0.5
1
5
10
15
0.5
1
5
10
15
I , Forward Current (A)
F
I , Forward Current (A)
F
Figure 4. Trr, ta and tb Curves vs. Forward Current
Figure 3. Trr, ta and tb Curves vs. Forward Current
15
175
150
T
C
= 175°C, dI /dt = 100 A/ms
F
DC
12
SQ. WAVE
125
100
75
T
rr
9
6
3
0
t
b
50
25
0
t
a
175
0.5
1
5
10
15
100
115
130
145
160
I , Forward Current (A)
F
T , Case Temperature (°C)
C
Figure 6. Current Derating Curve
Figure 5. Trr, ta and tb Curves vs. Forward Current
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3
RHRG1560CC, RHRG1540CC
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
175
150
125
100
75
50
25
0
200
0
50
100
V , Reverse Voltage (V)
150
R
Figure 7. Junction Capacitance vs. Reverse Voltage
TEST CIRCUITS AND WAVEFORMS
V
AMPLITUDE AND
GE
G
R
CONTROL dI /dt
F
L
t AND t Control I
1
2
F
dI
dt
t
rr
F
I
F
t
b
t
a
DUT CURRENT
SENSE
0
R
G
+
V
DD
V
GE
0.25 I
RM
−
IGBT
t
1
I
RM
t
2
Figure 9. Trr Waveforms and Definitions
Figure 8. Trr Test Circuit
I
= 1 A
MAX
L = 40 mH
R < 0.1 W
2
E
= 1/2LI [V
/(V
− V )]
R(AVL
AVL
1
R(AVL)
CES
R(AVL) DD
V
AVL
Q = IGBT (BV
> DUT V
)
R
L
I
L
+
V
I
L
CURRENT
SENSE
DD
I V
Q
1
V
DD
DUT
−
t
t
1
t
2
t
0
Figure 11. Avalanche Current and Voltage Waveforms
Figure 10. Avalanche Energy Test Circuit
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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