RHRD660S9A-F085 [ONSEMI]
Hyperfast Diode, 600 V, 6 A, 2.1 V, DPAK;
| 型号： | RHRD660S9A-F085 |
| 厂家： | 
ONSEMI |
| 描述： | Hyperfast Diode, 600 V, 6 A, 2.1 V, DPAK 软恢复二极管 超快速软恢复二极管 软恢复能力电源 超快速软恢复能力电源 光电二极管 |
| 文件： | 总6页 (文件大小：712K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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RHRD660S9A-F085
Data Sheet
May 2013
6A, 600V Hyperfast Diodes
Features
The RHRD660S9A-F085 is hyperfast diodes with
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <30ns
soft recovery characteristics (t < 30ns). It has half the
o
rr
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . .175 C
recovery time of ultrafast diodes and are silicon nitride
passivated ion-implanted epitaxial planar construction.
• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
This device is intended for use as freewheeling/
• Planar Construction
• Qualified to AEC Q101
• RoHS Compliant
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Its low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Formerly developmental type TA49057.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RHRD660S9A-F085
TO-252
RHR660
Symbol
Packaging
JEDEC STYLE TO-252
K
A
CATHODE
(FLANGE)
CATHODE
ANODE
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
RHRD660S9A-F085
UNITS
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
600
600
600
6
V
V
V
A
RRM
RWM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
o
(T = 152 C)
C
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
12
60
A
A
FRM
FSM
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
50
10
W
D
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
mJ
AVL
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering
, T
STG
-55 to 175
C
J
o
(Leads at 0.063 in. (1.6mm) from case for 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
300
260
C
L
o
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
C
PKG
Publication Order Number:
©2011Semiconductor Components Industries, LLC.
September-2017, Rev 3
RHRD660S9A-F085/D
RHRD660S9A-F085
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
SYMBOL
TEST CONDITION
= 6A
MIN
TYP
MAX
2.1
1.7
100
500
30
35
-
UNITS
V
V
I
I
-
-
-
-
-
-
-
-
-
-
-
-
-
F
F
o
= 6A, T = 150 C
V
F
C
I
V
V
= 600V
-
µA
µA
ns
R
R
R
o
= 600V, T = 150 C
-
C
t
I
I
I
I
I
= 1A, dI /dt = 200A/µs
-
rr
F
F
F
F
F
F
= 6A, dI /dt = 200A/µs
-
ns
F
t
t
= 6A, dI /dt = 200A/µs
16
8.5
45
20
-
ns
a
F
= 6A, dI /dt = 200A/µs
-
ns
b
F
Q
= 6A, dI /dt = 200A/µs
-
nC
pF
RR
F
C
V
= 10V, I = 0A
-
J
R
F
o
R
3
C/W
θJC
DEFINITIONS
V
= Instantaneous forward voltage (pw = 300µs, D = 2%).
F
I
= Instantaneous reverse current.
R
t
= Reverse recovery time (See Figure 9), summation of t + t .
a b
rr
t = Time to reach peak reverse current (See Figure 9).
a
t = Time from peak I
to projected zero crossing of I
based on a straight line from peak I
through 25% of I (See Figure 9).
RM
b
RM
= Reverse recovery charge.
RM
RM
Q
RR
C = Junction capacitance.
J
R
= Thermal resistance junction to case.
θJC
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
30
1000
100
10
o
175 C
10
o
100 C
1
o
o
o
25 C
175 C
100 C
0.1
o
1
25 C
0.5
0.01
0
0.5
1
1.5
2
2.5
3
0
100
200
V , REVERSE VOLTAGE (V)
R
300
400
500
600
V , FORWARD VOLTAGE (V)
F
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE
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2
RHRD660S9A-F085
Typical Performance Curves (Continued)
30
25
50
40
30
20
10
0
o
o
T
= 25 C, dI /dt = 200A/µs
F
T
= 100 C, dI /dt = 200A/µs
C
C
F
t
t
rr
rr
20
15
t
a
t
a
10
5
t
b
t
b
0
0.5
1
6
0.5
1
6
I , FORWARD CURRENT (A)
I , FORWARD CURRENT (A)
F
F
FIGURE 3. t , t AND t CURVES vs FORWARD CURRENT
rr
FIGURE 4. t , t AND t CURVES vs FORWARD CURRENT
a
b
rr
a
b
75
60
45
30
15
0
6
5
4
3
2
1
0
o
T
= 175 C, dI /dt = 200A/µs
F
C
DC
t
rr
SQ. WAVE
t
a
t
b
140
145
150
155
160
165
o
170
175
0.5
1
6
I , FORWARD CURRENT (A)
T
, CASE TEMPERATURE ( C)
F
C
FIGURE 5. t , t AND t CURVES vs FORWARD CURRENT
rr
FIGURE 6. CURRENT DERATING CURVE
a
b
50
40
30
20
10
0
0
50
100
150
200
V
, REVERSE VOLTAGE (V)
R
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
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3
RHRD660S9A-F085
Test Circuits and Waveforms
V
AMPLITUDE AND
GE
R
CONTROL dI /dt
F
G
L
t
t CONTROL I
1 AND
2 F
DUT
CURRENT
SENSE
dI
F
t
rr
R
I
F
G
dt
t
t
b
+
a
0
V
V
DD
GE
-
IGBT
t
1
0.25 I
RM
t
2
I
RM
FIGURE 8. t TEST CIRCUIT
rr
FIGURE 9. t WAVEFORMS AND DEFINITIONS
rr
I
= 1A
MAX
L = 20mH
R < 0.1Ω
2
E
= 1/2LI [V
/(V
- V )]
DD
AVL
= IGBT (BV
R(AVL) R(AVL)
V
AVL
Q
> DUT V )
R(AVL)
1
CES
L
R
+
V
CURRENT
SENSE
I
I
L
L
DD
I
V
Q
1
V
DD
DUT
-
t
t
t
2
t
0
1
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT ANDVOLTAGE
WAVEFORMS
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4
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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❖
相关型号：
RHRD660S9A_F085
Rectifier Diode, 1 Phase, 1 Element, 6A, 600V V(RRM), Silicon, TO-252, TO-252, 3 PIN
FAIRCHILD
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