RFD16N05SM9A [ONSEMI]
N 沟道，功率 MOSFET，50V，16A，47mΩ;
| 型号： | RFD16N05SM9A |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，功率 MOSFET，50V，16A，47mΩ PC 开关 晶体管 |
| 文件： | 总10页 (文件大小：758K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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RFD16N05SM
Data Sheet
September 2013
N-Channel Power MOSFET
Features
50V, 16A, 47 mΩ
• 16A, 50V
• r = 0.047Ω
The RFD16N05 and RFD16N05SM N-channel power
MOSFETs are manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of
LSI integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use in applications such as switching regulators,
DS(ON)
®
• Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
o
switching converters, motor drivers, and relay drivers. These
transistors can be operated directly from integrated circuits.
• 175 C Operating Temperature
• Related Literature
Formerly developmental type TA09771.
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
Symbol
PART NUMBER
PACKAGE
BRAND
D16N05
D
RFD16N05SM9A
TO-252AA
G
S
Packaging
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
©2003 Fairchild Semiconductor Corporation
RFD16N05SM Rev. C0
RFD16N05SM
o
Absolute Maximum Ratings
T = 25 C, Unless Otherwise Specified
C
RFD16N05SM9A
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
50
V
V
A
DSS
DGR
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
50
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
16
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Refer to Peak Current Curve
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
±20
Refer to Figure 5
72
V
GS
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
W
D
o
o
Derate above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.48
W/ C
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
T
-55 to 175
C
J, STG
o
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
300
260
C
L
o
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
C
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
o
o
1. T = 25 C to 150 C.
J
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
TEST CONDITIONS
= 250µA, V = 0V (Figure 11)
GS
MIN
TYP
MAX
UNITS
V
Drain to Source Breakdown Voltage
Gate Threshold Voltage
BV
I
50
2
-
-
-
-
-
-
4
DSS
D
V
V
V
V
= V , I = 250µA
V
GS(TH)
GS
DS
DS
DS
D
Zero Gate Voltage Drain Current
I
= Rated BV
, V
DSS GS
= 0V
1
µA
DSS
= 0.8 x Rated BV
= 150 C
, V
= 0V,
-
25
µA
DSS GS
o
T
C
Gate to Source Leakage Current
I
V
= ±20V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
±100
nA
Ω
GSS
GS
= 16A, V = 10V (Figure 9)
GS
Drain to Source On Resistance (Note 2)
Turn-On Time
r
I
0.047
DS(ON)
D
t
V
V
= 25V, I = 8A, R = 3.125Ω,
= 10V, R
-
65
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
(ON)
DD
D
L
= 25Ω
GS
GS
Turn-On Delay Time
t
14
30
55
30
-
-
d(ON)
(Figure 13)
Rise Time
t
-
r
Turn-Off Delay Time
t
-
-
d(OFF)
Fall Time
t
f
Turn-Off Time
t
125
80
45
2.2
-
(OFF)
Total Gate Charge
Q
V
V
V
V
= 0V to 20V
= 0V to 10V
= 0V to 2V
V = 40V, ID ≈ 16A,
DD
-
g(TOT)
GS
GS
GS
DS
R
= 2.5Ω
L
Gate Charge at 10V
Q
-
g(10)
I
= 0.8mA
g(REF)
Threshold Gate Charge
Input Capacitance
Q
(Figure 13)
-
(TH)
C
= 25V, V
GS
= 0V, f = 1MHz
900
325
100
-
ISS
OSS
RSS
(Figure 12)
Output Capacitance
C
-
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
C
-
o
R
2.083
100
C/W
θJC
θJA
o
R
TO-251 and TO-252
-
C/W
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Diode Reverse Recovery Time
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
1.5
UNITS
V
I
I
= 16A
-
-
-
-
V
SD
SD
t
= 16A, dI /dt = 100A/µs
SD
125
ns
rr
SD
NOTES:
2. Pulse test: pulse width ≤250µs, duty cycle ≤2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
©2003 Fairchild Semiconductor Corporation
RFD16N05SM Rev. C0
RFD16N05SM
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
20
16
12
8
4
0
0
25
50
75
100
125
o
150
175
25
50
75
100
125
150
175
o
T
, CASE TEMPERATURE ( C)
T , CASE TEMPERATURE ( C)
C
C
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TENPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
1
0.5
0.2
P
DM
0.1
0.1
0.05
t
1
0.02
0.01
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
1
2
PEAK T = P
x Z
x R
+ T
JA A
J
DM
JA
θ
θ
0.01
10
-5
-4
10
-3
10
-2
10
-1
0
1
10
10
10
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
SINGLE PULSE
FOR TEMPERATURES
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
T
= MAX RATED
J
o
100
10
1
o
V
= 20V
T
= 25 C
200
100
GS
C
175 - T
V
= 10V
C
GS
I = I
25
150
100µs
o
T
= 25 C
C
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
10ms
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
100ms
DC
V
= 50V
DSS(MAX)
10
, DRAIN TO SOURCE VOLTAGE (V)
1
100
10
10
-5
-4
-3
-2
-1
0
1
10
10
10
10
10
10
V
DS
t, PULSE WIDTH (s)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
©2003 Fairchild Semiconductor Corporation
RFD16N05SM Rev. C0
RFD16N05SM
Typical Performance Curves Unless Otherwise Specified (Continued)
50
40
30
20
10
0
100
10
1
V
= 20V
V
= 10V
GS
V
= 8V
GS
GS
V
= 7V
GS
o
STARTING T = 25 C
J
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
o
T
= 25 C
C
V
= 6V
= 5V
GS
o
STARTING T = 150 C
J
If R = 0
= (L)(I )/(1.3*RATED BV
V
GS
t
- V
)
DD
AV
If R ≠ 0
AS
DSS
V
= 4.5V
GS
t
= (L/R)ln[(I *R)/(1.3*RATED BV
-V ) +1]
AV
AS
DSS DD
1
V , DRAIN TO SOURCE VOLTAGE (V)
DS
0
2
3
4
0.01
0.1
1
10
t
, TIME IN AVALANCHE (ms)
AV
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
2.5
2.0
50
PULSE DURATION = 80µs
V
= 15V
DD
o
o
175 C
-55 C
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= 10V, I = 16A
GS
D
40
30
20
o
25 C
1.5
1.0
0.5
0
10
0
-80
-40
0
40
80
120
160
200
0
2
V
4
6
8
10
o
, GATE TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE ( C)
GS
J
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2.0
1.5
2.0
1.5
V
= V , I = 250µA
DS
I
= 250µA
GS
D
D
1.0
1.0
0.5
0
0.5
0
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
200
160
o
o
T , JUNCTION TEMPERATURE ( C)
T , JUNCTION TEMPERATURE ( C)
J
J
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
©2003 Fairchild Semiconductor Corporation
RFD16N05SM Rev. C0
RFD16N05SM
Typical Performance Curves Unless Otherwise Specified (Continued)
10
7.5
5
50
1600
V
= 0V, f = 1MHz
GS
V
= BV
DSS
V
= BV
DSS
DD
C
C
C
= C
+ C
DD
ISS
GS
= C
GD
RSS
OSS
GD
37.5
25
1200
800
400
0
≈
C
+ C
DS
GS
C
ISS
0.75 BV
0.50 BV
0.25 BV
DSS
DSS
DSS
C
C
OSS
RSS
2.5
0
12.5
0
R
= 3.125Ω
G(REF)
L
I
= 0.8mA
V
= 10V
GS
I
I
G(REF)
G(REF)
---------------------
t, TIME (ms)
0
5
10
15
20
25
20------------------------
80
I
I
G(ACT)
G(ACT)
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Test Circuits and Waveforms
V
DS
BV
DSS
L
t
P
V
DS
I
VARY t TO OBTAIN
P
AS
+
-
V
DD
R
REQUIRED PEAK I
G
AS
V
DD
V
GS
DUT
t
P
I
AS
0V
0
0.01Ω
t
AV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
t
t
ON
OFF
t
d(OFF)
t
d(ON)
V
DS
t
t
f
r
V
DS
90%
90%
R
L
V
GS
+
10%
10%
0
0
V
DD
-
DUT
90%
50%
R
GS
V
GS
50%
PULSE WIDTH
10%
V
GS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
©2003 Fairchild Semiconductor Corporation
RFD16N05SM Rev. C0
RFD16N05SM
Test Circuits and Waveforms (Continued)
V
DS
V
Q
DD
R
g(TOT)
L
V
DS
V
= 20V
GS
V
Q
GS
g(10)
+
-
V
DD
V
= 10V
V
GS
GS
DUT
V
= 2V
GS
I
0
G(REF)
Q
g(TH)
I
G(REF)
0
FIGURE 18. GATE CHARGE TEST CIRCUIT
FIGURE 19. GATE CHARGE WAVEFORM
©2003 Fairchild Semiconductor Corporation
RFD16N05SM Rev. C0
RFD16N05SM
PSPICE Electrical Model
.SUBCKT RFD16N05 2 1 3 ;
rev 10/31/94
CA 12 8 1.788e-10
CB 15 14 1.875e-10
CIN 6 8 8.33e-10
DPLCAP
5
5
DRAIN
2
10
DBODY 7 5 DBDMOD
LDRAIN
DBREAK 5 11 DBKMOD
DPLCAP 10 5 DPLCAPMOD
RSCL1
51
+
DBREAK
RSCL2
EBREAK 11 7 17 18 64.89
EDS 14 8 5 8 1
ESCL
51
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTO 20 6 18 8 1
50
-
+
-
DBODY
6
8
11
RDRAIN
ESG
17
18
16
EBREAK
+
VTO
+
IT 8 17 1
MOS2
EVTO
GATE
1
21
+
-
6
9
20
18
8
LDRAIN 2 5 1e-9
LGATE 1 9 4.56e-9
LSOURCE 3 7 4.13e-9
MOS1
8
LGATE RGATE
RIN
CIN
LSOURCE
RSOURCE
7
MOS1 16 6 8 8 MOSMOD M = 0.99
MOS2 16 21 8 8 MOSMOD M = 0.01
3
SOURCE
S1A
S2A
RBREAK 17 18 RBKMOD 1
RDRAIN 50 16 RDSMOD 0.4e-3
RGATE 9 20 3.0
12
RBREAK
15
13
8
14
13
17
18
S1B
CA
S2B
13
RIN 6 8 1e9
RSCL1 5 51 RSCLMOD 1e-6
RSCL2 5 50 1e3
RSOURCE 8 7 RDSMOD 21.5e-3
RVTO 18 19 RVTOMOD 1
RVTO
19
CB
+
IT
14
+
-
VBAT
5
8
6
8
EGS
EDS
+
-
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 0.82
ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/94,7))}
.MODEL DBDMOD D (IS = 2.5e-13 RS = 7.1e-3 TRS1 = 3.04e-3 TRS2 = -10e-6 CJO = 1.12e-9 TT = 5.6e-8)
.MODEL DBKMOD D (RS = 2.51e-1 TRS1 = -6.57e-4 TRS2 = 1.66e-6)
.MODEL DPLCAPMOD D (CJO = 6.1e-10 IS = 1e-30 N = 10)
.MODEL MOSMOD NMOS (VTO = 3.96 KP = 16.68 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL RBKMOD RES (TC1 = 1.07e-3 TC2 = -7.19e-7)
.MODEL RDSMOD RES (TC1 = 5.45e-3 TC2 = 1.66e-5)
.MODEL RSCLMOD RES (TC1 = 1.25e-3 TC2 = 17e-6)
.MODEL RVTOMOD RES (TC1 = -5.15e-3 TC2 = -4.83e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.25 VOFF= -3.25)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.25 VOFF= -5.25)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.56 VOFF= 5.56)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 5.56 VOFF= 0.56)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; written by William J. Hepp and C. Frank Wheatley.
©2003 Fairchild Semiconductor Corporation
RFD16N05SM Rev. C0
RFD16N05SM
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
F-PFS™
FRFET
Sync-Lock™
®*
®
®
®
tm
®
Global Power ResourceSM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
Gmax™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Dual Cool™
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
EfficentMax™
ESBC™
®
TRUECURRENT *
SerDes™
SMART START™
®
Solutions for Your Success™
®
®
SPM
Fairchild
®
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
Fairchild Semiconductor
FACT Quiet Series™
®
®
UHC
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
mWSaver
OptoHiT™
OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
®
FastvCore™
FETBench™
FPS™
®
®
SupreMOS
SyncFET™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
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up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
©2003 Fairchild Semiconductor Corporation
RFD16N05SM Rev. C0
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