QRE1113 [ONSEMI]
Miniature Reflective Object Sensor;
| 型号： | QRE1113 |
| 厂家： | 
ONSEMI |
| 描述： | Miniature Reflective Object Sensor PC 传感器 换能器 |
| 文件： | 总9页 (文件大小：332K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QRE1113, QRE1113GR,
QRE1114GR
Miniature Reflective
Object Sensor
Features
www.onsemi.com
• Phototransistor Output
• No Contact Surface Sensing
• Miniature Package
• Lead Form Style: Gull Wing
Pin 1: Anode
Pin 2: Cathode
Pin 3: Collector
Pin 4: Emitter
• Two Leadform Options:
♦ Through Hole (QRE1113)
♦ SMT Gull Wing (QRE1113GR & QRE1114GR)
• Two Packaging Options:
1
2
3
4
♦ Tube (QRE1113)
♦ Tape and Reel (QRE1113GR & QRE1114GR)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Operating Temperature
Storage Temperature
Value
Unit
°C
T
OPR
−40 to +85
−40 to +90
240 for 5 s
REFLECTIVE RECTANGULAR SURFACE MOUNT
CASE 100CY
T
STG
°C
T
SOL−I
Soldering Temperature (Iron)
(Notes 2, 3, 4)
°C
T
Soldering Temperature (Flow)
(Notes 3, 4)
260 for 10 s
°C
SOL−F
EMITTER
I
Continuous Forward Current
Reverse Voltage
50
5
mA
V
F
V
R
I
Peak Forward Current (Note 5)
Power Dissipation (Note 1)
1
A
FP
P
75
mW
REFLECTIVE RECTANGULAR THROUGH HOLE
CASE 100AQ
D
SENSOR
V
V
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
30
5
V
V
CEO
ECO
ORDERING INFORMATION
I
C
20
50
mA
mW
†
Device
Package
Shipping
P
Power Dissipation (Note 1)
D
QRE1113
Reflective
Rectangular
(Through Hole)
1600 / Tube
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Derate power dissipation linearly 1.00 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16″ (1.6 mm) from housing.
5. Pulse conditions: tp = 100 ms; T = 10 ms.
QRE1113GR
&
QRE1114GR
Reflective
Rectangular
(Surface Mount)
1000 /
Tape & Reel
†For information on tape and reel specifications, in-
cluding part orientation and tape sizes, please refer
to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
This document, and the information contained herein, is CONFIDENTIAL AND
PROPRIETARY and the property of Semiconductor Components Industries,
LLC., dba ON Semiconductor. It shall not be used, published, disclosed or
disseminated outside of the Company, in whole or in part, without the written
permission of ON Semiconductor. Reverse engineering of any or all of the
information contained herein is strictly prohibited.
E 2020, SCILLC. All Rights Reserved.
© Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
February, 2020 − Rev. 7
QRE1113/D
QRE1113, QRE1113GR, QRE1114GR
ELECTRICAL/OPTICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Conditions
Min
Typ
1.2
Max
Unit
INPUT DIODE
V
F
Forward Voltage
I = 20 mA
1.6
10
V
F
l
R
Reverse Leakage Current
V
R
= 5 V
mA
nm
l
PE
Peak Emission
Wavelength
I = 20 mA
F
940
OUTPUT TRANSISTOR
l
D
Collector-Emitter Dark
Current
I = 0 mA, V = 20 V
100
nA
F
CE
COUPLED
l
On-State Collector
Current
I = 20 mA, V = 5 V
QRE1113 & QRE1113GR
QRE1114GR
0.10
0.30
0.90
mA
mA
mA
C(ON)
F
CE
(Note 6)
0.60
1
I
Cross-Talk Collector
Current
I = 20 mA, V = 5 V (Note 7)
F CE
CX
V
Saturation Voltage
Rise Time
I = 20 mA, I = 50 mA (Note 6)
0.3
V
CE(SAT)
F
C
t
r
V
CC
= 5 V, l
= 100 mA, R = 1 kW
20
20
ms
ms
C(ON)
L
t
f
Fall Time
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Measured using an aluminum alloy mirror at d = 1 mm.
7. No reflective surface at close proximity.
REFLOW PROFILE
260°C max. for 10 sec. max.
1°C to 5°C/sec
260°C
220°C
Pre−heating
180°C to 200°C
60 sec. max.
above 220°C
1°C to 5°C/sec
120 sec. max.
Time (seconds)
Figure 1. Reflow Profile
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2
QRE1113, QRE1113GR, QRE1114GR
TYPICAL PERFORMANCE CURVES
1.0
0.8
0.6
0.4
0.2
0.0
1.0
I
V
T
= 10 mA
F
QRE1113 & QRE1113GR
= 5 V
CE
= 25˚C
A
0.8
0.6
0.4
0.2
0.0
d 0
Sensing Object:
White Paper (90% reflective)
QRE1114GR
Mirror
0
1
2
3
4
5
0
4
8
12
16
20
d−DISTANCE (mm)
I
F
− FORWARD CURRENT (mA)
Figure 2. Normalized Collector Current vs.
Distance between Device and Reflector
Figure 3. Collector Current vs. Forward Current
2.0
102
d = 1 mm, 90% reflection
Normalized to:
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
CE
= 10 V
T
A
= 25˚C
V
= 10 V
CE
= 25˚C
T
A
V
= 5 V
CE
101
I
= 25mA
=20mA
F
I
F
100
I
=15mA
=10mA
=5mA
F
F
F
I
10−1
10−2
I
0.1
1
10
25
40
55
70
85
V
CE
− COLLECTOR EMITTER VOLTAGE (V)
− AMBIENT TEMPERATURE (˚C)
T
A
Figure 4. Normalized Collector Current vs.
Collector to Emitter Voltage
Figure 5. Collector Emitter Dark Current
(Normalized) vs. Ambient Temperature
www.onsemi.com
3
QRE1113, QRE1113GR, QRE1114GR
TYPICAL PERFORMANCE CURVES (Continued)
100
50
40
30
20
10
0
V
t
= 10 V
CC
= 100 us
T
= 25˚C
A
pw
T=1ms
T
= 25˚C
A
I
= 0.3 mA
C
C
t
t
f
r
10
t
t
f
I
= 1 mA
r
1
0.1
1.0
1.1
1.2
1.3
1.4
1.5
1
10
R
L
− LOAD RESISTANCE (kW)
V
F
− FORWARD VOLTAGE (V)
Figure 6. Forward Current vs. Forward Voltage
Figure 7. Rise and Fall Time vs. Load Resistance
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
0.9
0.8
IF = 50 mA
IF = 20 mA
IF = 10 mA
0.7
0.6
0.4
0.2
0
0.2
0.4
0.6
−40
−20
0
20
40
60
80
ANGULAR DISPLACEMENT
T
A
− AMBIENT TEMPERATURE (˚C)
Figure 8. Forward Voltage vs. Ambient
Temperature
Figure 9. Radiation Diagram
www.onsemi.com
4
QRE1113, QRE1113GR, QRE1114GR
TAPING DIMENSIONS FOR GR OPTION
Progressive Direction
2.0±0.05
4.0
ø1.5
0.25
1.75
5.5±0.05
12.0±0.3
4.75
3.73
8.0
1.98
General tolerance 0.1
Dimensions in mm
Figure 10. Taping Dimensions for GR Option
REEL DIMENSIONS
2.2 ± 0.5
ø178.0 ± 1.0
ø60.0 ± 0.5
ø13.0 ± 0.5
12.0 ± 0.15
9.0 ± 0.5
Figure 11. Reel Dimensions
www.onsemi.com
5
QRE1113, QRE1113GR, QRE1114GR
Precautionary Notes
1. Refer to application note AND8003/D, “Storage and Handling of Dry Packed Surface Mounted Devices” for details of handling procedure.
2. Product soldering terminals are silver plated and oxidization may occur with prolonged exposure to ambient environment. Oxidized terminal
may have poor solderability performance. Keep unsealed devices in moisture barrier bag sealed with desiccant or in dry cabinet at <5%
relative humidity.
3. Store PCB in sealed moisture barrier bag together with desiccant or store in dry cabinet at <5% relative humidity. Mounted device that has
been exposed to ambient environment for long period of time may suffer moisture related damage if PCB is subjected to subsequent high
temperature processes.
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
REFLECTIVE RECTANGULAR THROUGH HOLE
CASE 100AQ
ISSUE O
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13409G
REFLECTIVE RECTANGULAR THROUGH HOLE
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ARUSM−313 / REFLECTIVE RECTANGULAR SURFACE MOUNT
CASE 100CY
ISSUE O
DATE 31 JAN 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13407G
ARUSM−313 / REFLECTIVE RECTANGULAR SURFACE MOUNT
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
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