PZT3906 [ONSEMI]
PNP 通用放大器;
| 型号： | PZT3906 |
| 厂家： | 
ONSEMI |
| 描述： | PNP 通用放大器 放大器 开关 光电二极管 晶体管 |
| 文件： | 总12页 (文件大小：565K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
2N3906 / MMBT3906 / PZT3906
PNP General-Purpose Amplifier
Description
This device is designed for general-purpose amplifier
and switching applications at collector currents of 10 mA
to 100 mA.
PZT3906
2N3906
MMBT3906
C
C
E
E
C
B
TO-92
SOT-23
Mark:2A
SOT-223
B
EBC
Ordering Information
Part Number
2N3906BU
2N3906TA
2N3906TAR
2N3906TF
2N3906TFR
MMBT3906
PZT3906
Marking
2N3906
2N3906
2N3906
2N3906
2N3906
2A
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
SOT-23 3L
SOT-223 4L
Packing Method
Bulk
Pack Quantity
10000
2000
Ammo
Ammo
2000
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
2000
2000
3000
3906
2500
© 2010 Semiconductor Components Industries, LLC.
October-2017, Rev. 2
Publication Order Number:
PZT3906/D
Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCEO
VCBO
VEBO
IC
Parameter
Value
-40
Unit
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
-40
V
-5.0
V
Collector Current - Continuous
-200
mA
°C
TJ, TSTG Operating and Storage Junction Temperature Range
Note:
1. These ratings are based on a maximum junction temperature of 150°C.
-55 to +150
These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or
low-duty cycle operations.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Maximum
MMBT3906(2) PZT3906(3)
Symbol
Parameter
Unit
2N3906(3)
625
Total Device Dissipation
350
2.8
1,000
8.0
mW
mW/°C
°C/W
PD
Derate Above 25°C
5.0
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
83.3
200
357
125
°C/W
Notes:
2. Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
www.onsemi.com
2
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown
Voltage(4)
Parameter
Conditions
Min.
Max.
Unit
V(BR)CEO
IC = -1.0 mA, IB = 0
-40
V
V(BR)CBO Collector-Base Breakdown Voltage IC = -10 μA, IE = 0
V(BR)EBO Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0
-40
V
V
-5.0
IBL
Base Cut-Off Current
VCE = -30 V, VBE = 3.0 V
VCE = -30 V, VBE = 3.0 V
-50
-50
nA
nA
ICEX
Collector Cut-Off Current
ON CHARACTERISTICS
IC = -0.1 mA, VCE = -1.0 V
IC = -1.0 mA, VCE = -1.0 V
IC = -10 mA, VCE = -1.0 V
IC = -50 mA, VCE = -1.0 V
IC = -100 mA, VCE = -1.0V
IC = -10 mA, IB = -1.0 mA
IC = -50 mA, IB = -5.0 mA
IC = -10 mA, IB = -1.0 mA
IC = -50 mA, IB = -5.0 mA
60
80
hFE
DC Current Gain(4)
100
60
300
30
-0.25
-0.40
-0.85
-0.95
Collector-Emitter Saturation
Voltage
VCE(sat)
V
V
-0.65
250
VBE(sat) Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
IC = -10 mA, VCE = -20 V,
f = 100 MHz
fT
Current Gain - Bandwidth Product
Output Capacitance
MHz
pF
VCB = -5.0 V, IE = 0,
f = 100 kHz
Cobo
Cibo
4.5
VEB = -0.5 V, IC = 0,
f = 100 kHz
Input Capacitance
10.0
pF
IC = -100 μA, VCE = -5.0 V,
RS = 1.0 kΩ,
f = 10 Hz to 15.7 kHz
NF
Noise Figure
4.0
dB
SWITCHING CHARACTERISTICS
td
tr
Delay Time
Rise Time
Storage Time
Fall Time
35
35
ns
ns
ns
ns
VCC = -3.0 V, VBE = -0.5 V
IC = -10 mA, IB1 = -1.0 mA
ts
tf
225
75
VCC = -3.0 V, IC = -10 mA,
IB1 = IB2 = -1.0 mA
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
www.onsemi.com
3
Typical Performance Characteristics
250
0.3
0.25
0.2
V
= 1.0V
CE
β
= 10
125 °C
200
150
100
50
0.15
0.1
25 °C
25 °C
125°C
- 40 °C
0.05
0
- 40 °C
0.1 0.2
0.5
1
2
5
10 20
50 100
1
10
IC - COLLECTOR CURRENT (mA)
100 200
IC - COLLECTOR CURRENT (mA)
Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 1. Typical Pulsed Current Gain vs. Collector
Current
1
β = 10
1
0.8
0.6
0.4
0.2
0
- 40 °C
0.8
- 40 °C
25 °C
125 °C
25 °C
0.6
125 °C
0.4
V
= 1V
CE
0.2
0
1
10
I C - COLLECTOR CURRENT (mA)
100
200
0.1
1
10
25
IC - COLLECTOR CURRENT (mA)
Figure 4. Base-Emitter On Voltage vs.
Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs. Collector Current
100
10
V
= 25V
CB
C
obo
10
1
8
6
4
2
0
C
ibo
0.1
0.01
0.1
1
10
25
50
75
100
125
REVERSE BIAS VOLTAGE (V)
TA - AMBIE NT TEMP ERATURE ( C)
°
Figure 6. Common-Base Open Circuit Input and Out-
put Capacitance vs. Reverse Bias Voltage
Figure 5. Collector Cut-Off Current vs.
Ambient Temperature
www.onsemi.com
4
Typical Performance Characteristics (Continued)
6
12
10
8
VCE = 5.0V
f = 1.0 kHz
VCE = 5.0V
5
4
3
I
= 1.0 mA
C
6
I
= 100 μA, R = 200Ω
C
S
2
1
0
4
I
I
= 1.0 mA, R = 200Ω
I
= 100 μA
C
C
S
C
2
= 100 μA, R = 2.0 kΩ
S
0
0.1
1
10
100
0.1
1
10
100
f - FREQUENCY (kHz)
R
- SOURCE RESISTANCE (
)
kΩ
S
Figure 8. Noise Figure vs. Source Resistance
Figure 7. Noise Figure vs. Frequency
500
100
500
t
t
s
off
100
I
c
t
I B1
=
10
t
f
on
t
on
VBE(OFF)= 0.5V
I
10
1
10
1
t
r
I
c
c
t
IB1= IB2
=
10
IB1= IB2
=
off
10
t
d
1
10
- COLLECTOR CURRENT (mA)
100
1
10
- COLLECTOR CURRENT (mA)
100
I
I
C
Figure 10. Turn-On and Turn-Off Times vs.
Collector Current
Figure 9. Switching Times vs. Collector Current
1
SOT-223
0.75
TO-92
0.5
SOT-23
0.25
0
0
25
50
75
100
125
150
TEMPERATURE (oC)
Figure 11. Power Dissipation vs.
Ambient Temperature
www.onsemi.com
5
Typical Performance Characteristics (Continued)
100
10
1
V
= 10 V
CE
f = 1.0 kHz
10
1
0.1
0.1
1
10
0.1
1
10
I C- COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Figure 13. Input Impedance
Figure 12. Voltage Feedback Ratio
1000
100
10
1000
500
V
= 10 V
CE
V
= 10 V
CE
f = 1.0 kHz
f = 1.0 kHz
200
100
50
20
10
0.1
1
10
0.1
1
10
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Figure 15. Current Gain
Figure 14. Output Admittance
www.onsemi.com
6
Physical Dimensions
TO-92 (Bulk)
D
Figure 16. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3)
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and
conditions, specifically the warranty therein, which covers ON Semiconductor products.
www.onsemi.com
7
Physical Dimensions (Continued)
TO-92 (Ammo, Tape and Reel)
Figure 17. 3-LEAD, TO92, MOLDED 0.200 IN LINE SPACING LEAD FORM (J61Z OPTION)
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and
conditions, specifically the warranty therein, which covers ON Semiconductor products.
www.onsemi.com
8
Physical Dimensions (Continued)
SOT-23
0.95
2.92 0.20
3
1.40
+0.20
1.30
2.20
1.00
-0.15
1
2
0.60
0.37
(0.29)
0.95
0.20
A B
1.90
1.90
LAND PATTERN
RECOMMENDATION
SEE DETAIL A
1.20 MAX
(0.93)
0.10
0.00
0.10
C
C
2.40 0.30
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE PLANE
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
0.23
0.08
0.25
0.20 MIN
(0.55)
E) DRAWING FILE NAME: MA03DREV10
SEATING
PLANE
SCALE: 2X
Figure 18. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and
conditions, specifically the warranty therein, which covers ON Semiconductor products.
www.onsemi.com
9
Physical Dimensions (Continued)
SOT-223 4L
Figure 19. MOLDED PACKAGE, SOT-223, 4-LEAD
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and
conditions, specifically the warranty therein, which covers ON Semiconductor products.
www.onsemi.com
10
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
❖
相关型号：
PZT3906-T
TRANSISTOR 100 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, SOT-223, 4 PIN, BIP General Purpose Small Signal
NXP
PZT3906S62Z
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
FAIRCHILD
PZT3906TRL
Power Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
YAGEO
PZT3906TRL13
Power Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
YAGEO
PZT3906_NL
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SOT-223, 4 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明