PN2907ATF [ONSEMI]

General Purpose Transistor PNP Silicon;


型号：	PN2907ATF
厂家：	ONSEMI
描述：	General Purpose Transistor PNP Silicon 开关晶体管
文件：	总4页 (文件大小：99K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

www.onsemi.com

PNP General-Purpose

Transistor

PN2907

TO−92 3 4.825x4.76

CASE 135AN

Description

This device is designed for use with general−purpose amplifiers and

switches requiring collector currents to 500 mA.

These devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free

and are RoHS compliant.

MARKING DIAGRAM

APN

2907

YWW

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

(Note 1, 2)

Symbol

Parameter

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Value

−40

Unit

CEO

CBO

EBO

−60

−5.0

PN2907 = Specific Device Code

Collector Current − Continuous

−800

°C

= Assembly Site

= Year of Production

= Work Week Number

T , T

Operating and Storage Junction

Temperature Range

−55 to +150

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady−state limits. onsemi should be consulted on applications

involving pulsed or low−duty cycle operations.

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Max

(Note 3)

Symbol

Parameter

Total Device Dissipation

Unit

625

Derate Above 25°C

5.0

mW/°C

°C/W

Thermal Resistance, Junction to Case

83.3

200

Thermal Resistance, Junction to Ambient

3. PCB size: FR−4 76 x 114 x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with

minimum land pattern size.

Publication Order Number:

August, 2022 − Rev. 4

PN2907/D

PN2907

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 4)

Collector−Base Breakdown Voltage

Emitter−Base Breakdown Voltage

Collector Cut−Off Current

= −10 mA, I = 0

−40

−60

−5.0

−

(BR)CEO

(BR)CBO

(BR)EBO

= −10 mA, I = 0

−

I = −10 mA, I = 0

−

= −30 V, V = −0.5 V

−50

−20

CEX

Base Cut−Off Current

= −30 V, V = −0.5 V

−

Collector Cut−Off Current

= −50 V, I = 0

−

CBO

= −50 V, I = 0, T = 150°C

−

ON CHARACTERISTICS (Note 4)

DC Current Gain

= −10 V, I = −0.1 mA

100

−

= −10 V, I = −1.0 mA

= −10 V, I = −10 mA

−

= −10 V, I = −150 mA

300

−

= −10 V, I = −500 mA

(sat)

Collector−Emitter Saturation Voltage

Base−Emitter Saturation Voltage

= −150 mA, I = −15 mA

−0.4

−1.6

−1.3

−2.6

= −500 mA, I = −50 mA

−

= −150 mA, I = −15 mA

−

= −500 mA, I = −50 mA

−

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Input Capacitance

= −10 V, f = 1.0 MHz

= −2.0 V, f = 1.0 MHz

−

Small−Signal Current Gain

I = −50 mA, V = −20 V, f = 100 MHz

C CE

SWITCHING CHARACTERISTICS

Turn−On Time

Delay Time

Rise Time

= −30 V, I = −150 mA,

= −15 mA

−

Turn−Off Time

Storage Time

Fall Time

= −6.0 V, I = −150 mA,

100

off

= I = −15 mA

4. Pulse test: pulse width ≤ 300 ms, duty cycle ≤ 2.0%.

ORDERING INFORMATION

Part Number

PN2907BU

Top Mark

PN2907

Package

Shipping

10000 Units / Bulk

TO−92 3 4.825x4.76

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

www.onsemi.com

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

TO−92 3 4.825x4.76

CASE 135AN

ISSUE O

DATE 31 JUL 2016

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON13880G

TO−92 3 4.825X4.76

PAGE 1 OF 1

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