PCRKA20075F8 [ONSEMI]
二极管裸片 750V 200A;
| 型号： | PCRKA20075F8 |
| 厂家： | 
ONSEMI |
| 描述： | 二极管裸片 750V 200A 二极管 |
| 文件： | 总3页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DIE DATA SHEET
www.onsemi.com
V
= 750V
RRM
750 V, 200 A Extremefast
Diode Die
I = Limited by T
F
j(max)
DIODE DIE
PCRKA20075F8
Features
AEC−Q101 Rev. D Qualified for Enhanced Reliability
Maximum Junction Temperature 175C
Extremefast Technology Generation 2 with Improved Soft Recovery
Low Forward Voltage: V = 1.7 V (Typ.) @ I = 200 A
F
F
DIE OUTLINE
Applications
Automotive Traction Modules
General Power Modules
MECHANICAL PARAMETERS
Parameter
Mils
mm
10,000 x 5,000
8,776 x 3,776
80
Die Size
394 x 197
346 x 149
3.14
Anode Pad Size
Scribe Lane Width
Die Thickness
Top Metal
ORDERING INFORMATION
Device
PCRKA20075F8
Inking?
Shipping
3.62
92
Yes
Sawn Wafer on Tape
6 mm AlSiCu
Back Metal
1.4 mm Ti/NiV/Ag
Silicon Nitride plus Polyimide
200 mm
Topside Passivation
Wafer Diameter
Max Possible Die Per
Wafer
467
Recommended Storage
Environment
In original container, in dry nitrogen,
< 3 months at an ambient temperature of 23C
ABSOLUTE MAXIMUM RATINGS (T = 25C Unless Otherwise Noted)
VJ
Parameter
Repetitive Peak Reverse Voltage
DC Forward Current, limited by T max
Symbol
Ratings
Unit
V
V
RRM
750
(Note 1)
600
I
F
A
VJ
Pulsed Forward Current, tp limited by T
Operating Junction Temperature
Storage Temperature Range
(Note 2)
I
A
VJ max
FM
T
VJ
−40 to +175
+18 to +28
C
C
Tstg
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Depends on the thermal properties of assembly.
2. Not subject to production test – verified by design/characterization.
Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
July, 2022 − Rev. 2
PCRKA20075F8/D
PCRKA20075F8
ELECTRICAL CHARACTERISTICS (T = 25C Unless Otherwise Noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
STATIC CHARACTERISTICS (Tested on Wafers)
Breakdown Voltage
Reverse Leakage Current
Forward Voltage
V
I
= 1 mA
750
−
−
−
−
V
mA
V
BR
R
I
V
= 750 V
30
R
R
V
I = 200 A
F
1.4
1.7
1.95
F
ELECTRICAL CHARACTERISTICS (Not Subjected to Production Test – Verified by Design/Characterization)
Breakdown Voltage
Forward Voltage
V
I
= 1 mA
T
T
T
T
= −40C
= 25C
700
−
800
1.7
−
−
−
−
−
−
−
−
−
−
−
−
−
V
V
BR
R
VJ
VJ
VJ
VJ
V
I = 200 A
F
F
= 150C
= 175C
−
1.72
1.7
V
−
V
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recover Time
Q
I = 200 A V = 400 V,
−
2.49
23
mC
A
rr
F
R
dI /dt = 500 A/ms, T = 25C
F
VJ
I
−
rr
T
−
220
9.6
nS
mC
A
rr
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recover Time
Q
I = 200 A V = 400 V,
−
rr
F
R
dI /dt = 500 A/ms, T = 150C
F
VJ
I
−
46
rr
T
−
420
11.9
49.5
483
nS
mC
A
rr
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recover Time
Q
I = 200 A V = 400 V,
−
rr
F
R
dI /dt = 500 A/ms, T = 175C
F
VJ
I
−
rr
T
−
nS
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching characteristics and thermal properties are depending strongly on module design and mounting technology.
For ordering, technique and other information on onsemi automotive bare die products, please contact
automotivebaredie@onsemi.com.
DIE LAYOUT
Figure 1. Die Layout
www.onsemi.com
2
PCRKA20075F8
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