NZ8P24VMX2WT5G [ONSEMI]
Zener Protection Diode;
| 型号： | NZ8P24VMX2WT5G |
| 厂家： | 
ONSEMI |
| 描述： | Zener Protection Diode |
| 文件： | 总3页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Zener Protection Diode
NZ8P24VMX2WT5G
1
2
Cathode
Anode
The NZ8P24V is designed for applications requiring transient
overvoltage ESD protection. They are intended for use to protect
voltage sensitive components from ESD and other harmful transient
voltage events. This device provides a single channel of
uni−directional protection in an, ultra−compact X2DFNW2 1.0 x
0.6 mm package.
X2DFNW2
CASE 711BG
DEVICE MARKING INFORMATION
XX M
Features
• Precise Clamping Voltage
• High ESD Ratings
• Wettable Flank Package for Optimal Automated Optical Inspection
XX = Specific Device Code
M
= Date Code
(AOI)
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
ORDERING INFORMATION
†
Device
Package Shipping
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
NZ8P24VMX2WT5G
SZNZ8P24VMX2WT5G
X2DFNW2 8000 / Tape
(Pb−Free)
& Reel
Typical Applications
• Automotive ECU’s
• IVN – In Vehicle Networking
• Voltage Sensitive Circuits
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Rating
Symbol
Value
Unit
IEC 61000−4−2 Contact
ESD
30
30
30
30
30
kV
IEC 61000−4−2 Air
ISO 10605 Contact (330 pF / 330 W)
ISO 10605 Contact (330 pF / 2 kW)
ISO 10605 Contact (150 pF / 2 kW)
Maximum Reverse Peak Pulse Current
(8 x 20 ms)
Maximum Reverse Peak Pulse Current
(10 x 1000 ms)
I
PP
4.5
1.0
A
Junction and Storage Temperature Range
T , T
−55 to
°C
°C
J
stg
+150
Lead Solder Temperature − Maximum
(10 Second Duration)
T
L
260
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
April, 2023 − Rev. 0
NZ8P24VMX2/D
NZ8P24VMX2WT5G
ELECTRICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
A
Symbol
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
I
PP
V
C
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
Breakdown Voltage @ I
Test Current
BR
T
I
T
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Parameter
Reverse Working Voltage
Breakdown Voltage
Symbol
Condition
Min
Typ
Max
Unit
V
V
RWM
(Note 1)
24
V
BR
I = 5 mA (Note 2)
I = 5 mA @ 150°C
26.3
27
10
27.7
31.2
V
T
T
Reverse Leakage Current
Clamping Voltage (8/20 ms)
Clamping Voltage (8/20 ms)
Clamping Voltage (10/1000 ms)
Junction Capacitance
I
R
V
RWM
= 24 V
100
35
nA
V
V
I
PP
I
PP
I
PP
= 1.0 A
C
C
C
V
V
= 4.5 A
56
V
= 0.87 A
44
V
C
V
R
= 0 V, f = 1 MHz
22
pF
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Surge protection devices are normally selected according to the working peak reverse voltage (V
than the DC or continuous peak operating voltage level.
), which should be equal or greater
RWM
2. V is measure at pulse test current I .
BR
T
www.onsemi.com
2
NZ8P24VMX2WT5G
PACKAGE DIMENSIONS
X2DFNW2 1.0x0.6, 0.65P
CASE 711BG
ISSUE C
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