NXH006P120MNF2PTG [ONSEMI]
Silicon Carbide (SiC) Module - EliteSiC, 6 mohm SiC MOSFET, 1200 V, Half Bridge 2-PACK, F2 Package;
| 型号： | NXH006P120MNF2PTG |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) Module - EliteSiC, 6 mohm SiC MOSFET, 1200 V, Half Bridge 2-PACK, F2 Package |
| 文件： | 总10页 (文件大小：1717K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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PACKAGE PICTURE
Silicon Carbide (SiC)
Module – EliteSiC, 6 mohm
SiC M1 MOSFET, 1200 V,
2-PACK Half Bridge
Topology, F2 Package
NXH006P120MNF2PTG
PIM36 56.7x42.5 (PRESS FIT)
CASE 180BY
The NXH006P120MNF2 is a power module containing an 6 mW /
1200 V SiC MOSFET half−bridge and a thermistor in an F2 package.
MARKING DIAGRAM
Features
• 6 mW / 1200 V SiC MOSFET Half−Bridge
• Thermistor
NXH006P120MNF2PTG
ATYYWW
• Options with Pre−Applied Thermal Interface Material (TIM) and
without Pre−Applied TIM
XXXXX = Specific Device Code
AT = Assembly & Test Site Code
YWW = Year and Work Week Code
• Options with Solderable Pins and Press−Fit Pins
• These Devices are Pb−Free, Halide Free and are RoHS Compliant
Typical Applications
• Solar Inverter
PIN CONNECTIONS
• Uninterruptible Power Supplies
• Electric Vehicle Charging Stations
• Industrial Power
See Pin Function Description for pin names
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of
this data sheet.
Figure 1. NXH006P120MNF2 Schematic Diagram
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
February, 2023 − Rev. 4
NXH006P120MNF2/D
NXH006P120MNF2PTG
PIN FUNCTION DESCRIPTION
Pin
1
Name
S1
Description
Q1 Kelvin Emitter (High side switch)
2
G1
Q1 Gate (High side switch)
Q1 Gate (High side switch)
Q1 Kelvin Emitter (High side switch)
DC Positive Bus connection
DC Positive Bus connection
DC Positive Bus connection
DC Positive Bus connection
DC Positive Bus connection
DC Positive Bus connection
DC Positive Bus connection
DC Positive Bus connection
DC Negative Bus connection
DC Negative Bus connection
DC Negative Bus connection
DC Negative Bus connection
DC Negative Bus connection
DC Negative Bus connection
DC Negative Bus connection
DC Negative Bus connection
Center point of half bridge
Center point of half bridge
Center point of half bridge
Center point of half bridge
Center point of half bridge
Q2 Kelvin Emitter (Low side switch)
Q2 Gate (Low side switch)
Thermistor Connection 1
3
G1
4
S1
5
DC+
6
DC+
7
DC+
8
DC+
9
DC+
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
DC+
DC+
DC+
DC−
DC−
DC−
DC−
DC−
DC−
DC−
DC−
PHASE
PHASE
PHASE
PHASE
PHASE
S2
G2
TH1
TH2
Thermistor Connection 2
S2
Q2 Kelvin Emitter (Low side switch)
Q2 Gate (Low side switch)
Center point of half bridge
Center point of half bridge
Center point of half bridge
Center point of half bridge
Center point of half bridge
G2
PHASE
PHASE
PHASE
PHASE
PHASE
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2
NXH006P120MNF2PTG
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
SiC MOSFET
Drain−Source Voltage
Gate−Source Voltage
V
1200
+25/−15
304
V
V
DSS
V
GS
Continuous Drain Current @ T = 80°C (T = 175°C)
I
D
A
c
J
Pulsed Drain Current (T = 175°C) (Note 2)
I
912
A
J
Dpulse
Maximum Power Dissipation (T = 175°C)
P
950
W
ms
°C
°C
J
tot
Short Circuit Withstand Time @ V = 15 V, V = 600 V, T v 150°C
T
sc
2.0
GE
CE
J
Minimum Operating Junction Temperature
T
JMIN
−40
Maximum Operating Junction Temperature
THERMAL PROPERTIES
Storage Temperature Range
TIM Layer Thickness
T
JMAX
175
T
stg
−40 to 150
°C
T
TIM
160 20
mm
INSULATION PROPERTIES
Isolation test voltage, t = 1 sec, 60 Hz
Creepage distance
V
is
4800
12.7
V
RMS
mm
CTI
600
Substrate Ceramic Material
Substrate Ceramic Material Thickness
Substrate Warpage (Note 3)
HPS
0.38
mm
mm
W
Max 0.18
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
2. Calculated for 1 ms pulse, package limitation at 400 A.
3. Height difference between horizontal plane and substrate bottom copper.
RECOMMENDED OPERATING RANGES
Rating
Symbol
Min
Max
Unit
Module Operating Junction Temperature
T
J
−40
175
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
ELECTRICAL CHARACTERISTICS
TJ = 25 °C unless otherwise noted
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
SiC MOSFET CHARACTERISTICS
Drain−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Drain−Source On Resistance
V
GS
V
GS
V
GS
V
GS
V
GS
V
GS
V
GS
= 0 V, I = 800 mA
V
(BR)DSS
1200
−
−
300
7.2
−
V
D
= 0 V, V = 1200 V
I
–
–
−
mA
DS
DSS
= 20 V, I = 200 A, T = 25°C
R
5.48
6.52
7.28
2.83
−
mW
D
J
DS(ON)
= 20 V, I = 200 A, T = 125°C
−
D
J
= 20 V, I = 200 A, T = 150°C
–
–
D
J
Gate−Source Threshold Voltage
= V , I = 80 mA
V
1.8
–1000
4.3
1000
V
DS
D
GS(TH)
Gate Leakage Current
= −10 V / 20 V, V = 0 V
I
nA
DS
GSS
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3
NXH006P120MNF2PTG
ELECTRICAL CHARACTERISTICS (continued)
TJ = 25 °C unless otherwise noted
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
SiC MOSFET CHARACTERISTICS
Input Capacitance
V
V
= 800 V, V = 0 V, f = 1 MHz
C
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
6687
49
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
6
–
–
–
pF
DS
GS
ISS
RSS
OSS
Reverse Transfer Capacitance
Output Capacitance
Total Gate Charge
C
C
1092
847
231
195
54
= 800 V, V = 20 V, I = 200 A
Q
G(TOTAL)
nC
nC
nC
ns
DS
GS
D
Gate−Source Charge
Gate−Drain Charge
Turn−on Delay Time
Rise Time
Q
Q
GS
GD
T = 25°C
t
d(on)
J
V
V
= 600 V, I = 200 A
D
DS
GS
t
r
21
= −5 V / 20 V, R = 1.8 W
G
Turn−off Delay Time
Fall Time
t
174
22
d(off)
t
f
Turn−on Switching Loss per Pulse
Turn−off Switching Loss per Pulse
Turn−on Delay Time
Rise Time
E
2.1
mJ
ns
ON
OFF
d(on)
E
2.75
48
T = 150°C
t
J
V
V
= 600 V, I = 200 A
D
DS
GS
t
r
19
= −5 V / 20 V, R = 1.8 W
G
Turn−off Delay Time
Fall Time
t
196
22
d(off)
t
f
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Diode Forward Voltage
E
2.3
mJ
V
ON
E
OFF
2.93
4.0
I
I
= 200 A, T = 25°C
V
SD
D
J
= 200 A, T = 150°C
3.6
D
J
Thermal Resistance − Chip−to−Case
Thermal Resistance − Chip−to−Heatsink
M1, M2
R
R
0.10
0.21
°C/W
°C/W
thJC
thJH
Thermal grease,
Thickness = 2 Mil +2%,
A = 2.8 W/mK
THERMISTOR CHARACTERISTICS
Nominal Resistance
T = 25°C
R
–
–
5
457
–
–
–
3
–
–
–
–
kW
W
25
T = 100°C
R
100
Deviation of R25
Power Dissipation
Power Dissipation Constant
B−value
DR/R
−3
–
%
P
50
mW
mW/K
K
D
–
5
B(25/50), tolerance 3%
B(25/100), tolerance 3%
–
3375
3455
B−value
–
K
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Orderable Part Number
Marking
Package
Shipping
NXH006P120MNF2PTG
NXH006P120MNF2PTG
F2HALFBR: Case 180BY
Press−fit Pins with pre−applied
thermal interface material (TIM)
(Pb-Free / Halide Free)
20 Units / Blister Tray
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4
NXH006P120MNF2PTG
TYPICAL CHARACTERISTICS
HALFBRIDGE MOSFET
Figure 2. MOSFET Typical Output Characteristic at
Figure 3. MOSFET Typical Output Characteristic
Figure 5. MOSFET Typical Transfer Characteristic
Figure 7. Gate−to−Source Voltage vs. Total Charge
1255C
Figure 4. MOSFET Typical Output Characteristic
Figure 6. Body Diode Forward Characteristic
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5
NXH006P120MNF2PTG
TYPICAL CHARACTERISTICS
(25°C unless otherwise noted)
Figure 8. Capacitance vs. Drain−to−Source Voltage
Figure 9. Typical Switching Loss Eon vs. IC
Figure 11. Typical Switching Loss Eoff vs. IC
Figure 10. Typical Switching Loss Eon vs. Rg
Figure 12. Typical Switching Loss Eoff vs. Rg
Figure 13. Typical Switching Loss Tdon vs. IC
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6
NXH006P120MNF2PTG
TYPICAL CHARACTERISTICS
(25°C unless otherwise noted)
Figure 14. Typical Switching Loss Tdon vs. Rg
Figure 15. Typical Switching Loss Tdoff vs. IC
Figure 17. Typical Switching Loss Tr vs. IC
Figure 16. Typical Switching Loss Tdoff vs. Rg
Figure 18. Typical Switching Loss Tr vs. Rg
Figure 19. Typical Switching Loss Tf vs. IC
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7
NXH006P120MNF2PTG
TYPICAL CHARACTERISTICS
(25°C unless otherwise noted)
Figure 20. Typical Switching Loss Tf vs. Rg
Figure 21. MOSFET Junction−to−Case Transient Thermal Impedance
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM36 56.7x42.5 (PRESS FIT)
CASE 180BY
ISSUE C
DATE 20 AUG 2021
NOTES:
D
1. CONTROLLING DIMENSION: MILLIMETERS
2. PIN POSITION TOLERANCE IS 0.4mm
PACKAGE MARKING
LOCATION
E
E1
E2
E3
E4
SIDE VIEW
ØP
D1
D2
TOP VIEW
b
25.5
24.0
20.8
17.6
25.5
24.0
20.8
A1
A3
A
14.4
11.2
8.0
11.2
END VIEW
4.8
4.8
1.6
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXX
ATYYWW
FRONTSIDE MARKING
Ø0.94~1.09
PLATED
Ø2.8
THRU HOLE
Ø9.0
2D
CODE
BACKSIDE MARKING
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
XXXXX = Specific Device Code
= Assembly & Test Site Code
YYWW = Year and Work Week Code
AT
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON19725H
PIM36 56.7x42.5 (PRESS FIT)
PAGE 1 OF 1
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