NVXK2TR80WDT [ONSEMI]
EliteSiC Power Module for OBC, 80mΩ, 1200V, 20 A, Dual H-Bridge, in APM32 Series;
| 型号： | NVXK2TR80WDT |
| 厂家： | 
ONSEMI |
| 描述： | EliteSiC Power Module for OBC, 80mΩ, 1200V, 20 A, Dual H-Bridge, in APM32 Series |
| 文件： | 总8页 (文件大小：679K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
Module – EliteSiC Power
Module for OBC,
V
R
Max
I Max
D
(BR)DSS
DS(on)
1200 V
116 mW @ 20 V
20 A
80ꢀmohm, 1200ꢀV, 20 A,
Dual Half-Bridge,
in APM32 Series
NVXK2TR80WDT
Features
SiC MOSFET H−Bridge Module
• DIP Silicon Carbide H−Bridge Power Module for On−board Charger
(OBC) for xEV Applications
• Creepage and Clearance per IEC 60664−1, IEC 60950−1
• Compact Design for Low Total Module Resistance
• Module Serialization for Full Traceability
• Lead Free, ROHS and UL94V−0 Compliant
• Automotive Qualified per AEC−Q101 and AQG324
Typical Applications
• DC−DC and On−Board Charger in xEV Applications
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
APM32
Parameter
Drain−to−Source Voltage
Symbol
Value
1200
Unit
V
V
DSS
ORDERING INFORMATION
Gate−to−Source Voltage
V
GS
+25/−15
+20/−5
V
Device
Package
Shipping
Recommended Operation Values of
V
GSop
V
Gate−to−Source Voltage, T ≤ 175°C
J
NVXK2TR80WDT
APM32
(Pb−Free)
10 ea / Tube
Continuous Drain
T
= 25°C
I
20
82
A
W
A
C
D
Current (Notes 1, 2)
Power Dissipation
(Note 1)
P
D
Pulsed Drain Current
(Note 3)
T
T
p
R
= 25°C
= 25°C,
I
110
266
C
DM
Single Pulse Surge
Drain Current Capability
I
A
C
DSC
t = 10 ms,
= 4.7 W
G
Operating Junction and Storage
Temperature
T , T
−55 to
175
°C
J
stg
Source Current (Body Diode) (Note 2)
I
S
18
A
Single Pulse Drain–to−Source
Avalanche Energy (Note 4)
E
AS
180
mJ
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Particular conditions specified determine thermal resistance values shown.
Infinite heatsink with T = 100°C for R . For R
assembled to 3 mm thick
θ
Ψ
JS
C
JC
aluminum heatsink with infinite cooling bottom surface at 85°C, through 38 mm
thick TIM with 6.5 W/mK thermal conductivity.
2. Qualified per ECPE Guideline AQG 324.
3. Repetitive rating limited by maximum junction temperature and
transconductance.
4. E based on initial T = 25°C, L = 1 mH, I = 19 A, V = 120 V, V = 18 V.
AS
J
AS
DD
GS
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
February, 2023 − Rev. 2
NVXK2TR80WDT/D
NVXK2TR80WDT
THERMAL CHARACTERISTICS (Note 1)
Parameter
Thermal Resistance Junction−to−Case (Note 1)
Thermal Resistance Junction−to−Sink (Note 1)
Symbol
Typ
1.41
1.84
Max
1.84
2.26
Unit
°C/W
°C/W
R
θ
JC
R
Ψ
JS
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 1 mA
1200
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 1 mA, referenced to 25°C
500
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
V
= 0 V,
T = 25°C
100
1
mA
mA
mA
DSS
GS
DS
J
= 1200 V
T = 175°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
= +25/−15 V, V = 0 V
1
GSS
GS
GS
DS
V
V
= V , I = 10 mA
1.8
3
4.3
+20
116
V
V
GS(TH)
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
Drain−to−Source On Resistance
Forward Transconductance
V
−5
GOP
R
R
V
GS
V
GS
V
DS
= 20 V, I = 20 A, T = 25°C
80
150
11
mW
mW
S
DS(on)
DS(on)
D
J
= 20 V, I = 20 A, T = 175°C
D
J
g
= 20 V, I = 20 A
D
FS
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0 V, f = 1 MHz, V = 800 V
1154
79
pF
nC
ISS
GS
DS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
OSS
C
RSS
7.9
56
Q
V
D
= −5/20 V, V = 600 V,
DS
= 20 A
G(TOT)
GS
I
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate−Resistance
Q
10
G(TH)
Q
18
GS
Q
11
GD
R
V
V
= 0 V, f = 1 MHz
1.2
W
G
GS
INDUCTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
= −5/20 V, V = 800 V,
12
12
ns
d(ON)
GS
DS
I
= 20 A, R = 4.7 W,
D
G
Rise Time
t
r
Inductive load
Turn−Off Delay Time
t
21
d(OFF)
Fall Time
t
f
9
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
135
46
mJ
mJ
mJ
ON
E
OFF
E
181
tot
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−Source Diode Forward
I
V
GS
V
GS
V
GS
= −5 V, T = 25°C
18
A
A
V
SD
J
Current (Note 1)
Pulsed Drain−Source Diode Forward
Current (Note 3)
I
= −5 V, T = 25°C
110
SDM
J
Forward Diode Voltage
V
= −5 V, I = 10 A, T = 25°C
3.9
SD
SD
J
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2
NVXK2TR80WDT
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated) (continued)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Reverse Recovery Time
t
V
SD
= −5 V, dI /dt = 1000 A/ms,
16.2
7.6
ns
A
RR
GS
S
I
= 20 A
Peak Reverse Recovery Current
Reverse Recovery Energy
I
RRM
E
4.1
mJ
nC
REC
Reverse Recovery Charge
Q
61.6
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse test: pulse width ≤300 ms, duty ratio ≤2%.
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NVXK2TR80WDT
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
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4
NVXK2TR80WDT
TYPICAL CHARACTERISTICS (CONTINUED)
Figure 7. Gate−to−Source Voltage vs. Total Charge
Figure 8. Capacitance vs. Drain−to−Source
Voltage
Figure 9. Unclamped Inductive Switching Capability
Figure 10. Maximum Continuous Drain Current
vs. Case Temperature
Figure 11. Single Pulse Maximum Power Dissipation
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5
NVXK2TR80WDT
TYPICAL CHARACTERISTICS (CONTINUED)
Figure 12. Thermal Response
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
APM32 AUTOMOTIVE MODULE
CASE MODHL
ISSUE B
DATE 05 APR 2022
GENERIC
MARKING DIAGRAM*
XXXX = Specific Device Code
ZZZ = Lot ID
*This information is generic. Please refer to
AT
Y
W
= Assembly & Test Location
= Year
= Work Week
XXXXXXXXXXXXXXXX
ZZZ ATYWW
NNNNNNN
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
NNN = Serial Number
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON29478H
APM32 AUTOMOTIVE MODULE
PAGE 1 OF 1
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