NVTYS020N08HLTWG [ONSEMI]
MOSFET – Power, Single, N-Channel,;
| 型号： | NVTYS020N08HLTWG |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET – Power, Single, N-Channel, |
| 文件： | 总7页 (文件大小：262K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET - Power, Single
N-Channel
80 V, 20 mW, 30 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
20 mW @ 10 V
25 mW @ 4.5 V
80 V
30 A
NVTYS020N08HL
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design
N−Channel
D (5 − 8)
• Low R
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• AEC−Q101 Qualified and PPAP Capable
DS(on)
G (4)
• These Devices are Pb−Free and are RoHS Compliant
S (1, 2, 3)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
80
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
30
A
C
D
LFPAK8
3.3x3.3
CASE 760AD
q
JC
T
C
21
(Notes 1, 2, 3, 4)
Steady
State
Power Dissipation
T
C
P
42
W
A
D
R
(Notes 1, 2, 3)
q
JC
T
C
= 100°C
21
MARKING DIAGRAM
Continuous Drain
Current R
T = 25°C
A
I
D
8.1
5.7
3.2
1.6
123
q
JA
T = 100°C
A
(Notes 1, 3, 4)
020N
08HL
AWLYW
Steady
State
Power Dissipation
T = 25°C
A
P
W
D
R
(Notes 1, 3)
q
JA
T = 100°C
A
020N08HL = Specific Device Code
= Assembly Location
WL = Wafer Lot
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
A
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Y
= Year
W
= Work Week
Source Current (Body Diode)
I
35.2
254
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 1.5 A)
L(pk)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol
Value
3.6
Unit
Junction−to−Case − Steady State (Note 3)
Junction−to−Ambient − Steady State (Note 3)
R
°C/W
q
JC
R
47.6
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which substantially
less than 100% of the heat flows to single case surface.
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
May, 2023 − Rev. 1
NVTYS020N08HL/D
NVTYS020N08HL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
80
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
59.9
V/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
T = 25°C
10
mA
DSS
J
V
= 0 V,
GS
DS
V
= 80 V
T = 125°C
J
100
100
Gate−to−Source Leakage Current
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
V
= V , I = 30 mA
1.2
2.0
V
mV/°C
mW
mW
S
GS(TH)
GS
DS
D
Threshold Temperature Coefficient
V
/T
−5.6
15.5
19.6
35
GS(TH)
J
Drain−to−Source On Resistance
R
V
= 10 V
I
I
= 10 A
= 10 A
20
25
DS(on)
GS
D
V
= 4.5 V
GS
D
Forward Transconductance
g
FS
V
= 5 V, I = 10 A
DS D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
610.5
85.3
5.2
12
6
ISS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
OSS
C
RSS
V
= 0 V, f = 1 MHz, V = 40 V
pF
GS
DS
Q
Q
V
GS
= 10 V, V = 64 V; I = 15 A
DS D
G(TOT)
G(TOT)
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
1
nC
V
G(TH)
Q
2
V
GS
= 4.5 V, V = 40 V; I = 15A
GS
GD
GP
DS
D
Q
V
2
3
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
t
8.8
24.3
15.3
5.6
d(ON)
t
r
V
= 4.5 V, V = 64 V,
DS
GS
D
ns
V
I
= 15 A, R = 6 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.84
0.71
26
1.2
SD
RR
J
V
S
= 0 V,
= 10 A
GS
I
T = 125°C
J
Reverse Recovery Time
Charge Time
t
t
a
17
ns
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 15 A
Discharge Time
t
b
9
Reverse Recovery Charge
Q
16
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NVTYS020N08HL
TYPICAL CHARACTERISTICS
80
70
60
50
40
30
20
60
V
GS
= 10 V to 5 V
V
DS
= 5 V
4.5 V
50
4.0 V
40
3.6 V
30
3.2 V
20
T = 25°C
J
10
0
2.8 V
10
0
T = 125°C
J
T = −55°C
J
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
9
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
60
55
50
45
40
50
40
30
20
T = 25°C
D
T = 25°C
J
J
I
= 10 A
35
30
25
20
V
= 4.5 V
= 10 V
GS
V
GS
10
0
15
10
1
2
3
4
5
6
7
8
9
10
5
10
15
20
25
30
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
3
100K
10K
1K
V
= 10 V
= 10 A
T = 175°C
J
GS
I
D
T = 150°C
J
T = 125°C
J
2
T = 85°C
J
100
10
1
0
T = 25°C
J
1
0.1
−50 −25
0
25
50
75 100 125 150 175
10
20
30
40
50
60
70
80
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
www.onsemi.com
3
NVTYS020N08HL
TYPICAL CHARACTERISTICS
1000
100
10
9
8
7
6
5
4
3
2
C
ISS
C
OSS
Q
Q
GD
GS
10
1
C
RSS
V
I
= 64 V
= 15 A
V
= 0 V
DS
GS
T = 25°C
D
J
1
0
T = 25°C
J
f = 1 MHz
0
10
20
30
40
50
60
70
80
0
2
4
6
8
10
12
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
100
10
V
GS
= 0 V
T = 175°C
J
T = 150°C
J
T = 125°C
J
t
r
T = 25°C
J
t
t
10
1
1
d(off)
d(on)
V
V
= 4.5 V
= 64 V
= 15 A
GS
DS
t
f
I
D
T = −55°C
J
0.1
1
10
R , GATE RESISTANCE (W)
60
0.3 0.5 0.7
0.9
1.1
1.3
1.5
1.7
1.9
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
100
10
T
= 25°C
C
Single Pulse
V
≤ 10 V
GS
T
= 25°C
J(initial)
10
T
= 150°C
J(initial)
1
10 ms
1
R
Limit
DS(on)
0.5 ms
1 ms
10 ms
Thermal Limit
Package Limit
0.1
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
www.onsemi.com
4
NVTYS020N08HL
TYPICAL CHARACTERISTICS
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVTYS020N08HLTWG
020N
08HL
LFPAK8
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
NVTYS020N08HL
PACKAGE DIMENSIONS
LFPAK8 3.3x3.3, 0.65P
CASE 760AD
ISSUE E
www.onsemi.com
6
NVTYS020N08HL
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
onsemi Website: www.onsemi.com
◊
www.onsemi.com
相关型号：
NVVR26A120M1WSS
Silicon Carbide (SiC) Module - EliteSiC Power Module for Traction Inverter, Single-Side Cooling, 2.6mΩ Rds_on, 1200V, Half-Bridge, Straight Power Tabs
ONSEMI
NVVR26A120M1WST
Silicon Carbide (SiC) Module - EliteSiC Power Module for Traction Inverter, Single-Side Cooling, 2.6mΩ Rds_on, 1200V, Half-Bridge, 90° Power Tabs
ONSEMI
©2020 ICPDF网 联系我们和版权申明