NVMYS005N10MCLTWG [ONSEMI]
MOSFET – Power, Single N-Channel 100 V, 5.1 mΩ, 108 A;
| 型号： | NVMYS005N10MCLTWG |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET – Power, Single N-Channel 100 V, 5.1 mΩ, 108 A |
| 文件： | 总6页 (文件大小：221K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – Power, Single
N-Channel
100 V, 5.1 mW, 108 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
5.1 mW @ 10 V
7.1 mW @ 4.5 V
100 V
108 A
NVMYS005N10MCL
D (5)
Features
• Small Footprint (5x6 mm) for Compact Design
G (4)
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free
and are RoHS Compliant
S (1,2,3)
N−CHANNEL MOSFET
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
MARKING
DIAGRAM
J
Parameter
Drain−to−Source Voltage
Symbol
Value
100
20
Unit
V
D
V
DSS
Gate−to−Source Voltage
V
GS
V
005N10
MCL
AWLYW
Continuous Drain
T
= 25°C
= 100°C
= 25°C
I
108
76
A
C
D
LFPAK4
CASE 760AB
Current R
(Note 1)
q
JC
T
C
Steady
State
1
Power Dissipation
(Note 1)
T
C
P
131
65
W
A
D
S
S
S
G
R
q
JC
T
C
= 100°C
005N10MCL = Specific Device Code
A
= Assembly Location
= Wafer Lot
Continuous Drain
Current R
T = 25°C
I
18.4
13.0
3.8
A
D
WL
Y
q
JA
T = 100°C
A
(Notes 1, 2)
= Year
Steady
State
W
= Work Week
Power Dissipation
T = 25°C
A
P
W
D
R
(Notes 1, 2)
q
JA
T = 100°C
A
1.9
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
736
A
A
p
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
100
365
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 6.5 A)
L(pk)
Lead Temperature Soldering Reflow for Solder-
ing Purposes (1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
1.15
40
Unit
Junction−to−Case − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using 1 in pad size, 2 oz. Cu pad.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
June, 2022 − Rev. 1
NVMYS005N10MCL/D
NVMYS005N10MCL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
100
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 250 mA, ref to 25°C
52
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
DS
= 0 V,
T = 25°C
1
mA
DSS
GS
J
V
= 100 V
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
Gate Threshold Voltage
V
V
GS
= V , I = 192 mA
1
3
V
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
I = 192 mA, ref to 25°C
D
−5.6
4.2
mV/°C
mW
GS(TH)
J
R
V
GS
GS
= 10 V, I = 34 A
5.1
7.1
DS(on)
D
V
= 4.5 V, I = 27 A
5.6
D
Forward Transconductance
Gate−Resistance
g
V
DS
= 10 V, I = 50 A
155
0.85
S
FS
D
R
T = 25°C
A
W
G
CHARGES & CAPACITANCES
Input Capacitance
C
V
= 0 V, f = 1 MHz, V = 50 V
4100
1350
22
26
55
11
pF
ISS
GS
DS
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
V
GS
= 4.5 V, V = 50 V, I = 34 A
nC
nC
G(TOT)
G(TOT)
DS
D
Total Gate Charge
Q
V
= 10 V, V = 50 V, I = 34 A
GS DS D
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
Q
GS
GD
GP
5
V
3
V
Threshold Gate Charge
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Q
6
nC
G(TH)
t
V
= 10 V, V = 50 V,
17
6.7
57
ns
d(ON)
GS
D
DS
I
= 34 A, R = 6 W
G
Rise Time
t
r
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
12.3
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
S
= 0 V,
T = 25°C
0.85
0.73
56
1.3
V
SD
RR
GS
J
I
= 34 A
T = 125°C
J
Reverse Recovery Time
Reverse Recovery Charge
Charge Time
t
V
= 0 V, dI /dt = 100 A/ms,
ns
nC
ns
ns
GS
S
I
S
= 17 A
Q
54
RR
t
25
a
b
Discharge Time
t
31
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures
www.onsemi.com
2
NVMYS005N10MCL
TYPICAL CHARACTERISTICS
100
80
100
V
= 10 to 3.2 V
GS
V
DS
= 10 V
3.0 V
2.8 V
80
60
40
60
T = 25°C
J
40
2.6 V
2.4 V
20
0
20
0
T = 150°C
J
T = −55°C
J
0
1
2
3
4
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
18
16
14
12
10
8
7
6
T = 25°C
J
T = 25°C
D
J
I
= 34 A
V
= 4.5 V
= 10 V
GS
5
4
V
GS
6
4
3
2
2
0
1
2
3
4
5
6
7
8
9
10
10
15
20
25
30
35
40
45
50
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
100
10
1
2.5
2.0
1.5
T = 175°C
V
= 10 V
= 34 A
J
GS
I
D
T = 150°C
J
T = 125°C
J
T = 85°C
J
0.1
T = 25°C
J
1.0
0.5
0.01
0.001
−50 −25
0
25
50
75
100 125 150 175
10 20
30
40
50
60
70
80
90 100
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
www.onsemi.com
3
NVMYS005N10MCL
TYPICAL CHARACTERISTICS
10K
1K
10
C
iss
9
8
7
6
5
4
3
2
C
oss
100
Q
GD
Q
GS
C
rss
10
1
V
I
= 50 V
= 34 A
V
= 0 V
DS
GS
T = 25°C
D
J
1
0
T = 25°C
J
f = 1 MHz
0
10 20 30 40 50 60 70 80
, DRAIN−TO−SOURCE VOLTAGE (V)
90 100
0
10
20
30
40
50
60
V
DS
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
1000
100
V
GS
= 0 V
t
t
d(off)
10
d(on)
10
1
t
t
f
V
= 10 V
= 50 V
= 34 A
r
GS
V
DS
I
D
T = 125°C
T = 25°C
T = −55°C
J
J
J
1
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1
10
R , GATE RESISTANCE (W)
G
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10
1000
100
10
10 ms
T (initial) = 25°C
J
T
V
= 25°C
C
T (initial) = 125°C
J
≤ 10 V
GS
Single Pulse
1
0.5 ms
1 ms
10 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.1
0.1
1
10
100
1000
0.0001
0.001
TIME IN AVALANCHE (sec)
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
www.onsemi.com
4
NVMYS005N10MCL
TYPICAL CHARACTERISTICS
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Single Pulse
0.00001 0.0001
0.01
0.000001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (sec)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMYS005N10MCLTWG
005N10MCL
LFPAK4
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
NVMYS005N10MCL
PACKAGE DIMENSIONS
LFPAK4 5x6
CASE 760AB
ISSUE C
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
onsemi Website: www.onsemi.com
◊
www.onsemi.com
相关型号：
©2020 ICPDF网 联系我们和版权申明