NVMTS1D0N04CLTXG [ONSEMI]
Power MOSFET, Single, N-Channel Logic Level, 40 V, 1.0 mO, 291 A;
| 型号： | NVMTS1D0N04CLTXG |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, Single, N-Channel Logic Level, 40 V, 1.0 mO, 291 A |
| 文件： | 总7页 (文件大小：241K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel, Logic Level
40 V, 1.0 mW, 291 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
1.0 mW @ 10 V
1.5 mW @ 4.5 V
40 V
291 A
NVMTS1D0N04CL
D (5−8)
Features
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
G
• AEC−Q101 Qualified and PPAP Capable
• New Power 88 Package
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
G (1)
S (2−4)
N−CHANNEL MOSFET
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
MARKING
DIAGRAM
V
DSS
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
291
206
153
76.5
51.3
36.3
4.7
A
C
D
1D0N04CL
AWLYWW
TDFNW8
CASE 507AP
q
JC
T
C
(Notes 1, 3)
Steady
State
Power Dissipation
T
C
P
W
A
D
R
(Note 1)
q
JC
T
C
= 100°C
A
= Assembly Location
WL = Wafer Lot Code
= Year Code
Continuous Drain
Current R
T = 25°C
A
I
D
q
JA
Y
T = 100°C
A
(Notes 1, 2, 3)
Steady
State
WW = Work Week Code
Power Dissipation
T = 25°C
A
P
W
D
R
(Notes 1 & 2)
q
JA
T = 100°C
A
2.4
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 2 of this data sheet.
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
900
A
A
p
Operating Junction and Storage Temperature
T , T
−55 to
+ 175
°C
J
stg
Source Current (Body Diode)
I
128
721
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 22 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.98
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
31.6
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
September, 2021 − Rev. 1
NVMTS1D0N04CL/D
NVMTS1D0N04CL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
21.3
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
1
DSS
GS
DS
J
V
= 40 V
mA
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 210 mA
1.0
1.5
−5.0
0.77
1.1
3.0
V
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
J
mV/°C
GS(TH)
R
V
GS
= 10 V
I
I
= 50 A
= 25 A
1.0
1.5
DS(on)
D
mW
V
GS
= 4.5 V
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
7408
3025
77
ISS
Output Capacitance
C
OSS
C
RSS
V
V
= 0 V, f = 1 MHz, V = 25 V
pF
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
122
7.0
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
G(TH)
nC
V
Q
18.7
20.6
2.7
= 10 V, V = 20 V; I = 50 A
GS
GD
GP
GS
DS
D
Q
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
16
18
d(ON)
Rise Time
t
r
V
= 10 V, V = 20 V,
DS
GS
D
ns
V
I
= 50 A, R = 6 W
G
Turn−Off Delay Time
t
133
48
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.78
0.64
78
1.2
SD
J
V
S
= 0 V,
GS
I
= 50 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
41
ns
a
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 50 A
Discharge Time
t
37
b
Reverse Recovery Charge
Q
96
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
DEVICE ORDERING INFORMATION
†
Device
Marking
Package
Shipping
NVMTS1D0N04CLTXG
1D0N04CL
TDFNW8
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NVMTS1D0N04CL
TYPICAL CHARACTERISTICS
600
500
400
600
V
= 10 V to 5 V
GS
T = −55°C
J
V
DS
= 5 V
T = 175°C
J
500
400
300
200
4.0 V
T = 25°C
J
300
200
100
0
3.0 V
100
0
0
0.5
1.0
1.5
2.0
2.5
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
1.6
1.4
1.2
1.0
0.8
3.0
2.5
2.0
1.5
T = 25°C
J
I
D
= 50 A
V
= 4.5 V
= 10 V
T = 175°C
J
GS
V
GS
1.0
0
0.6
0.4
T = 25°C
J
3
4
5
6
7
8
9
10
0
50
100
I , DRAIN CURRENT (A)
150
200
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
1.8
1.6
1.4
1.2
1.0
1000
100
10
V
I
= 10 V
= 50 A
GS
D
T = 175°C
J
T = 150°C
J
T = 125°C
J
T = 85°C
J
1.0
0.1
0.8
0.6
−75 −50 −25
0
25 50 75 100 125 150 175 200
5
10
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVMTS1D0N04CL
TYPICAL CHARACTERISTICS
10000
1000
10
9
8
7
6
5
4
3
2
C
ISS
Q
G(TOT)
C
OSS
Q
Q
GD
GS
100
10
V
= 0 V
V
I
= 20 V
= 50 A
GS
DS
C
RSS
T = 25°C
J
D
1
0
f = 1 MHz
T = 25°C
J
0
10
20
30
40
0
25
50
75
100
125
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
300
100
1000
100
V
GS
= 0 V
V
V
= 10 V
= 20 V
= 50 A
GS
t
d(off)
DS
I
D
10
1
t
f
T = 175°C
J
t
r
t
d(on)
0.1
10
1
T = 25°C
J
T = −55°C
J
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
10
R , GATE RESISTANCE (W)
100
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
400
100
10 ms
T
= 25°C
T
= 25°C
T
= 150°C
J(initial)
C
J(initial)
10
1
Single Pulse
≤ 10 V
10
1
V
GS
R
Limit
DS(on)
0.5 ms
1 ms
Thermal Limit
Package Limit
10 ms
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t , TIME IN AVALANCHE (ms)
AV
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NVMTS1D0N04CL
TYPICAL CHARACTERISTICS
100
10
Duty Cycle = 0.5
0.2
0.1
0.05
1
0.02
0.01
0.1
0.01
0.001
Single Pulse
0.0001
0.0000001 0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Thermal Characteristics
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5
NVMTS1D0N04CL
PACKAGE DIMENSIONS
TDFNW8 8.3x8.4, 2.0P, SINGLE COOL
CASE 507AP
ISSUE D
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6
NVMTS1D0N04CL
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