NVMFS5H600NLT1G [ONSEMI]
单 N 沟道,功率 MOSFET,60V,250A,1.3mΩ;型号: | NVMFS5H600NLT1G |
厂家: | ONSEMI |
描述: | 单 N 沟道,功率 MOSFET,60V,250A,1.3mΩ 脉冲 光电二极管 晶体管 |
文件: | 总8页 (文件大小:222K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – Power, Single
N-Channel, DFN5/DFNW5
60 V, 1.3 mW, 250 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
1.3 mW @ 10 V
1.7 mW @ 4.5 V
60 V
250 A
NVMFS5H600NL
D (5)
Features
• Small Footprint (5x6 mm) for Compact Design
G (4)
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
DFN5
CASE 506EZ
D
V
DSS
S
S
S
G
D
D
1
5H600L
AYWZZ
Gate−to−Source Voltage
V
GS
20
V
DFNW5
CASE 507BA
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
250
160
160
63
A
C
D
q
JC
D
T
C
(Notes 1, 3)
Steady
State
5H600L = Specific Device Code
Power Dissipation
T
C
P
W
A
D
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
R
(Note 1)
q
JC
T
C
= 100°C
Continuous Drain
Current R
T = 25°C
I
35
A
D
q
JA
T = 100°C
A
22
(Notes 1, 2, 3)
Steady
State
Power Dissipation
T = 25°C
A
P
3.3
1.3
900
W
D
R
(Notes 1, 2)
q
JA
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
T = 100°C
A
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
T , T
−55 to
+ 175
°C
J
stg
Source Current (Body Diode)
I
170
338
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 26 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.80
38
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
August, 2022 − Rev. 4
NVMFS5H600NL/D
NVMFS5H600NL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
34.3
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25 °C
10
DSS
GS
DS
J
V
= 60 V
mA
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 250 mA
1.2
2.0
V
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
−5.0
1.1
mV/°C
GS(TH)
J
R
V
= 10 V
I
I
= 50 A
= 50 A
1.3
1.7
DS(on)
GS
D
mW
V
GS
= 4.5 V
1.4
D
Forward Transconductance
g
FS
V
DS
=15 V, I = 50 A
280
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
6680
1230
30
ISS
Output Capacitance
C
OSS
C
RSS
Q
OSS
V
= 0 V, f = 1 MHz, V = 30 V
pF
GS
DS
Reverse Transfer Capacitance
Output Charge
V
GS
= 0 V, V = 30 V
100
40
DD
Total Gate Charge
Q
Q
V
= 4.5 V, V = 30 V; I = 50 A
G(TOT)
G(TOT)
GS DS D
Total Gate Charge
V
GS
= 10 V, V = 30 V; I = 50 A
89
DS
D
nC
V
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
11
G(TH)
Q
20
GS
GD
GP
V
GS
= 4.5 V, V = 30 V; I = 50 A
DS D
Q
V
6.5
3.0
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
t
28
130
88
d(ON)
t
r
V
= 4.5 V, V = 30 V,
DS
GS
D
ns
V
I
= 50 A, R = 2.5 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
160
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.77
0.63
72
1.2
SD
RR
J
V
S
= 0 V,
= 50 A
GS
I
T = 125°C
J
Reverse Recovery Time
Charge Time
t
t
a
36
ns
V
= 0 V, dI /dt = 100 A/ms,
S
GS
I
S
= 50 A
Discharge Time
t
b
36
Reverse Recovery Charge
Q
60
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVMFS5H600NL
TYPICAL CHARACTERISTICS
250
225
200
175
150
125
100
75
500
10 V to 3.4 V
V
= 10 V
450
400
350
300
250
200
150
100
DS
3.2 V
3.0 V
2.8 V
T = 25°C
J
V
GS
= 2.6 V
50
T = 125°C
J
25
0
50
0
T = −55°C
J
0
0.5
, DRAIN−TO−SOURCE VOLTAGE (V)
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5 4.0
V
DS
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
1.6
3.7
T = 25°C
D
J
T = 25°C
J
1.5
1.4
1.3
1.2
1.1
1.0
I
= 20 A
3.3
2.9
2.5
2.1
1.7
1.3
V
= 4.5 V
= 10 V
GS
V
GS
0.9
0.8
0.9
0.5
2
3
4
5
6
7
8
9
10
10
30
50
70
90
110
130
150
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1000000
100000
10000
1000
2.0
1.8
1.6
1.4
1.2
1.0
T = 175°C
J
V
I
= 10 V
= 50 A
GS
D
T = 125°C
J
T = 85°C
J
100
T = 25°C
J
10
1
0.8
0.6
−50 −25
0
25
50
75
100
125 150
5
15
25
35
45
55
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVMFS5H600NL
TYPICAL CHARACTERISTICS
1E+4
1E+3
10
9
Q
T
C
ISS
8
C
OSS
7
6
5
V
= 0 V
C
GS
RSS
Q
GD
Q
T = 25°C
4
3
2
GS
J
1E+2
1E+1
f = 1 MHz
V
= 30 V
DS
T = 25°C
J
1
0
I
D
= 50 A
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
80 90
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
100
10
1000
100
10
t
d(off)
t
f
t
r
t
d(on)
1
V
V
= 4.5 V
= 30 V
= 50 A
GS
DS
I
D
T = 125°C
J
T = −55°C
J
T = 25°C
J
0.1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
500 ms
1 ms
T
= 25°C
J(initial)
10 ms
T
= 100°C
J(initial)
10
10
1
R
Limit
DS(on)
Thermal Limit
Package Limit
1
100E−6
0.1
1
10
100
1E−3
TIME IN AVALANCHE (s)
10E−3
V
DS
(V)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NVMFS5H600NL
100
10
50% Duty Cycle
20%
10%
5%
2%
1%
2
1
NVMFS5H600NL 650 mm , 2 oz., Cu Single Layer Pad
0.1
Single Pulse
0.0001 0.001
0.01
0.000001 0.00001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
†
Device
Case
Marking
Package
Shipping
NVMFS5H600NLT1G
506EZ
506EZ
507BA
5H600L
DFN5
1500 / Tape & Reel
5000 / Tape & Reel
1500 / Tape & Reel
(Pb−Free)
NVMFS5H600NLT3G
5H600L
600LWF
DFN5
(Pb−Free)
NVMFS5H600NLWFT1G
DFNW5
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVMFS5H600NL
PACKAGE DIMENSIONS
DFNW5 5x6 (FULL−CUT SO8FL WF)
CASE 507BA
ISSUE A
q
q
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P (SO−8FL)
CASE 506EZ
ISSUE A
1
DATE 25 AUG 2021
SCALE 2:1
q
q
GENERIC
MARKING DIAGRAM*
1
XXXXXX
AYWZZ
XXXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
W
ZZ
= Work Week
= Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON24855H
DFN5 5x6, 1.27P (SO−8FL)
PAGE 1 OF 1
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