NVMFS5C420NT1G [ONSEMI]
MOSFET â Power, Single N-Channel;
| 型号： | NVMFS5C420NT1G |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET â Power, Single N-Channel |
| 文件： | 总6页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – Power, Single
N-Channel
40 V, 1.1 mW, 268 A
NVMFS5C420N
Features
• Small Footprint (5x6 mm) for Compact Design
www.onsemi.com
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
• NVMFS5C420NWF − Wettable Flank Option for Enhanced Optical
Inspection
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
40 V
1.1 mW @ 10 V
268 A
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
D (5,6)
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
V
DSS
Gate−to−Source Voltage
V
20
V
GS
G (4)
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
268
190
150
75
A
C
D
q
JC
T
C
(Notes 1, 3)
Steady
State
S (1,2,3)
N−CHANNEL MOSFET
Power Dissipation
T
C
P
W
A
D
R
(Note 1)
q
JC
T
C
= 100°C
Continuous Drain
Current R
T = 25°C
A
I
43
D
MARKING
DIAGRAM
q
JA
T = 100°C
A
30
(Notes 1, 2, 3)
Steady
State
D
Power Dissipation
T = 25°C
A
P
3.8
1.9
900
W
D
1
R
(Notes 1, 2)
S
S
S
G
D
D
q
JA
T = 100°C
A
XXXXXX
AYWZZ
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
Range
T , T
J
−55 to
+175
°C
stg
D
XXXXXX = 5C420N
XXXXXX = (NVMFS5C420N) or
XXXXXX = 420NWF
Source Current (Body Diode)
I
125
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
1541
mJ
Energy (I
= 24 A)
L(pk)
XXXXXX = (NVMFS5C420NWF)
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
Lead Temperature for Soldering Purposes
T
260
°C
L
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Parameter
Symbol
Value
1.0
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
39
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
September, 2020 − Rev. 0
NVMFS5C420N/D
NVMFS5C420N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
20
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25 °C
10
DSS
GS
DS
J
V
= 40 V
mA
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 200 mA
2.0
4.0
1.1
V
mV/°C
mW
S
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
V
/T
J
−7.7
0.9
GS(TH)
R
V
GS
= 10 V
I = 50 A
D
DS(on)
g
FS
V
= 5 V, I = 50 A
161
DS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
5340
3500
140
82
ISS
Output Capacitance
C
OSS
C
RSS
V
= 0 V, f = 1 MHz, V = 20 V
pF
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
V
GS
= 10 V, V = 32 V; I = 50 A
DS D
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
5.3
21
G(TH)
nC
V
Q
GS
GD
GP
V
GS
= 10 V, V = 32 V; I = 50 A
DS
D
Q
V
23
4.7
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
22
19
54
20
d(ON)
Rise Time
t
r
V
= 10 V, V = 32 V,
DS
GS
D
ns
V
I
= 50 A, R = 2.5 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.8
0.65
113
52
1.2
SD
J
V
S
= 0 V,
GS
I
= 50 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
ns
a
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 50 A
Discharge Time
t
61
b
Reverse Recovery Charge
Q
236
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVMFS5C420N
TYPICAL CHARACTERISTICS
500
450
400
350
300
250
200
150
500
V
GS
= 10 V to 8.0 V
450
400
350
300
6.0 V
250
200
150
5.2 V
4.8 V
T = 25°C
J
100
50
0
100
50
0
4.4 V
4.0 V
T = 125°C
T = −55°C
J
J
0
1
2
3
0
1
2
3
4
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
8
7
6
5
4
3
2
4.0
3.5
3.0
2.5
2.0
T = 25°C
J
T = 25°C
D
J
I
= 50 A
1.5
1.0
V
= 10 V
260
GS
1
0
0.5
0
5
6
7
8
9
10
20
60
100
140
180
220
300
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1M
100K
10K
1K
V
= 10 V
= 50 A
T = 175°C
GS
J
2.0
1.5
I
D
T = 125°C
J
T = 85°C
J
100
10
1
1.0
0.5
T = 25°C
J
−50 −25
0
25
50
75
100 125 150 175
5
10
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVMFS5C420N
TYPICAL CHARACTERISTICS
10
10K
1K
9
8
7
6
5
4
3
C
ISS
C
OSS
Q
Q
GS
GD
100
C
RSS
10
1
V
DS
= 32 V
V
= 0 V
2
1
0
GS
I
D
= 50 A
T = 25°C
J
T = 25°C
J
f = 1 MHz
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
80
90
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
100
10
t
d(off)
V
GS
= 0 V
t
f
t
r
100
t
d(on)
10
1
1
T = 125°C
J
V
V
= 10 V
= 32 V
= 50 A
GS
DS
I
D
T = −55°C
T = 25°C
J
J
0.1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
1000
100
10
T
= 25°C
J(initial)
10 ms
T
= 100°C
J(initial)
T
V
= 25°C
C
0.5 ms
1 ms
10 ms
10
1
≤ 10 V
GS
Single Pulse
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NVMFS5C420N
TYPICAL CHARACTERISTICS
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMFS5C420NT1G
5C420N
DFN5
1500 / Tape & Reel
1500 / Tape & Reel
(Pb−Free)
NVMFS5C420NWFT1G
420NWF
DFN5
(Pb−Free, Wettable Flanks)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVMFS5C420N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
E1
2
q
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
PLANE
DETAIL A
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
SIDE VIEW
DETAIL A
RECOMMENDED
5. DRAIN
SOLDERING FOOTPRINT*
8X b
A B
2X
0.10
0.05
C
c
0.495
4.560
e/2
e
2X
L
1.530
1
4
K
3.200
1.330
4.530
E2
PIN 5
(EXPOSED PAD)
M
L1
2X
0.905
1
D2
BOTTOM VIEW
G
0.965
4X
1.000
1.270
PITCH
DIMENSIONS: MILLIMETERS
4X
0.750
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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