NVLJWS5D0N03CLTAG [ONSEMI]
Single N−Channel Power MOSFET 30V 77A 4.2 mΩ;
| 型号： | NVLJWS5D0N03CLTAG |
| 厂家： | 
ONSEMI |
| 描述： | Single N−Channel Power MOSFET 30V 77A 4.2 mΩ |
| 文件： | 总7页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel
30 V, 4.2 mW, 77 A
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
4.2 mW @ 10 V
6.6 mW @ 4.5 V
30 V
77 A
NVLJWS5D0N03CL
ELECTRICAL CONNECTION
Features
D
• Small Footprint for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
G
G
• Wettable Flank Option for Enhanced Optical Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
S
N−CHANNEL MOSFET
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
30
Unit
V
MARKING
DIAGRAM
V
DSS
Gate−to−Source Voltage
V
GS
20
V
XXXX
ALYW
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
77
A
C
D
q
JC
WDFNW6 (2.05x2.05)
CASE 515AD
T
C
55
(Notes 1, 3)
Steady
State
Power Dissipation
T
C
P
45
W
A
D
XXXX = Specific Device Code
R
(Note 1)
q
JC
T
C
= 100°C
23
A
L
Y
W
= Assembly Location
= Wafer Lot
= Year
Continuous Drain
Current R
T = 25°C
A
I
D
18
q
JA
T = 100°C
A
13
= Work Week
(Notes 1, 2, 3)
Steady
State
Power Dissipation
T = 25°C
A
P
2.5
1.2
317
W
D
R
(Notes 1, 2)
q
JA
T = 100°C
A
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
S
37
A
Single Pulse Drain−to−Source Avalanche
E
AS
101
mJ
Energy (I
= 4.8 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
3.3
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
61
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
June, 2022 − Rev. 0
NVLJWS5D0N03CL/D
NVLJWS5D0N03CL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
30
V
(BR)DSS
D
Drain−to−Source Breakdown
Voltage Temperature Coefficient
V
/
14.4
mV/°C
(BR)DSS
I
D
= 250 mA, ref to 25°C
T
J
Zero Gate Voltage Drain Current
I
T = 25°C
1
mA
DSS
J
V
= 0 V,
= 30 V
GS
DS
V
T = 125°C
J
10
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
100
nA
GSS
DS
GS
V
V
GS
= V , I = 250 mA
1.2
2.0
V
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
R
/T
I = 250 mA, ref to 25°C
D
−4.4
3.5
5.1
44
mV/°C
mW
GS
J
V
= 10 V, I = 10 A
4.2
6.6
DS(on)
GS
GS
D
V
= 4.5 V, I = 10 A
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
V
DS
= 10 V, I = 10 A
S
FS
D
C
1350
650
20
pF
iss
V
GS
= 0 V, V = 15 V,
DS
Output Capacitance
C
oss
f = 1.0 MHz
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
Q
V
GS
= 4.5 V, V = 15 V; I = 10 A
9.0
20
G(TOT)
G(TOT)
DS
D
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
1.8
3.0
2.0
2.3
nC
G(TH)
V
GS
= 10 V, V = 15 V,
DS
Q
GS
GD
GP
I
= 10 A
D
Q
V
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
t
9.0
4.0
30
ns
d(on)
t
r
V
= 10 V, V = 15 V,
DD
GS
D
I
= 10 A, R = 6 W
G
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
6.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.78
0.64
35
1.2
V
SD
J
V
= 0 V,
GS
S
I
= 10 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
17
a
V
GS
= 0 V, dl /dt = 100 A/ms,
S
I
S
= 10 A
Discharge Time
18
b
Reverse Recovery Charge
Q
23
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVLJWS5D0N03CL
TYPICAL CHARACTERISTICS
80
70
60
50
40
30
20
80
V
GS
= 3.4 V to 10 V
3.2 V
3.0 V
V
DS
= 10 V
70
60
50
40
30
20
10
0
2.8 V
T = 25°C
J
2.6 V
2.4 V
10
0
T = 125°C
J
T = −55°C
J
0
1
2
3
4
5
1
2
3
4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
6
10
9
T = 25°C
J
T = 25°C
D
J
5.5
5
I
= 10 A
V
= 4.5 V
= 10 V
GS
8
7
4.5
4
6
5
V
GS
4
3.5
3
3
2
2.5
2
1
0
1
2
3
4
5
6
7
8
9
10
1
2
3
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
1.5
100
10
1
V
= 10 V
= 10 A
T = 175°C
GS
J
I
D
T = 150°C
J
T = 125°C
J
T = 85°C
J
0.1
1.0
0.5
0.01
0.001
T = 25°C
J
0.0001
−50 −25
0
25
50
75 100 125 150 175
10 12 14 16
18 20
22 24 26 28 30
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVLJWS5D0N03CL
TYPICAL CHARACTERISTICS
10K
1K
5
C
ISS
4
3
2
C
OSS
Q
Q
GD
GS
100
C
RSS
10
1
V
I
= 15 V
= 10 A
f = 1 MHz
= 0 V
T = 25°C
J
DS
1
0
V
D
GS
T = 25°C
J
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
9
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
100
V
V
= 10 V
= 15 V
= 10 A
V
= 0 V
t
GS
GS
d(off)
DS
t
f
I
D
t
r
T = 175°C
J
t
d(on)
T = 150°C
J
10
10
T = 125°C
J
T = 25°C
J
T = −55°C
J
1
0.1 0.2 0.3
1
1
10
R , GATE RESISTANCE (W)
100
0.4 0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6 0.7
0.8
0.9 1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10
1000
100
10
T
= 25°C
J(initial)
T
= 25°C
C
T
= 125°C
J(initial)
Single Pulse
≤ 10 V
1
V
GS
1
0.5 ms
1 ms
10 ms
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.1
0.1
1
10
100
0.00001
0.0001
t , TIME IN AVALANCHE (s)
AV
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVLJWS5D0N03CL
TYPICAL CHARACTERISTICS
100
10
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
1
Single Pulse
0.00001 0.0001
0.1
0.000001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Transient Thermal Impedance
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVLJWS5D0N03CLTAG
5D0N
WDFNW6
(Pb−Free, Wettable Flanks)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVLJWS5D0N03CL
PACKAGE DIMENSIONS
WDFNW6 2.05x2.05, 0.65P
CASE 515AD
ISSUE O
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6
NVLJWS5D0N03CL
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