NVHL095N65S3F [ONSEMI]
SUPERFET III MOSFET, 36A, 95mΩ, 650V in TO-247;
| 型号： | NVHL095N65S3F |
| 厂家： | 
ONSEMI |
| 描述： | SUPERFET III MOSFET, 36A, 95mΩ, 650V in TO-247 |
| 文件： | 总12页 (文件大小：336K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Is Now
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET – Power,
N‐Channel, SUPERFET III,
FRFET
650 V, 36 A, 95 mW
NVHL095N65S3F
Description
www.onsemi.com
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on-resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET is very suitable for the
various power system for miniaturization and higher efficiency.
SUPERFET III FRFET MOSFET’s optimized reverse recovery
performance of body diode can remove additional component and
improve system reliability.
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
95 mW @ 10 V
36 A
D
G
Features
• 700 V @ T = 150°C
J
S
• Typ. R
= 78 mW
DS(on)
• Ultra Low Gate Charge (Typ. Q = 65 nC)
MARKING
DIAGRAM
g
• Low Effective Output Capacitance (Typ. C
• 100% Avalanche Tested
= 597 pF)
oss(eff.)
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS
$Y&Z&3&K
NVHL095
N65S3F
Compliant
G
D
S
Applications
TO−247 long leads
• Automotive On Board Charger HEV−EV
• Automotive DC/DC Converter HEV−EV
CASE 340CX
$Y
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
&Z
&3
&K
NVHL095N65S3F = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
October, 2020 − Rev. 0
NVHL095N65S3F/D
NVHL095N65S3F
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
C
Symbol
Parameter
Value
650
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
− DC
30
V
− AC (f > 1 Hz)
30
I
D
Drain Current
− Continuous (T = 25°C)
36
A
C
− Continuous (T = 100°C)
22.8
90
C
I
Drain Current
− Pulsed (Note 1)
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
440
AS
AS
I
4.6
E
2.72
100
mJ
V/ns
AR
dv/dt
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
50
P
(T = 25°C)
272
W
W/°C
°C
D
C
− Derate Above 25°C
2.176
−55 to +150
300
T , T
Operating and Storage Temperature Range
J
STG
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I = 4.6 A, R = 25 W, starting T = 25°C.
AS
G
J
3. I ≤ 18 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.46
40
Unit
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
_C/W
q
JC
JA
R
q
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
Quantity
30 Units
NVHL095N65S3F
NVHL095N65S3F
TO−247
Tube
N/A
N/A
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2
NVHL095N65S3F
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain to Source Breakdown Voltage
BV
650
700
V
V
V
= 0 V, I = 1 mA, T = 25_C
DSS
GS
D
J
V
GS
= 0 V, I = 10 mA, T = 150_C
D
J
Breakdown Voltage Temperature
Coefficient
DBV
/DT
I
D
= 15 mA, Referenced to 25_C
640
12
mV/_C
DSS
J
Zero Gate Voltage Drain Current
I
V
DS
= 650 V, V = 0 V
10
100
5.0
95
mA
DSS
GS
V
= 520 V, T = 125_C
DS
C
Gate to Body Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
I
V
=
30 V, V = 0 V
nA
GSS
GS
DS
V
GS(th)
V
V
= V , I = 0.86 mA
3.0
V
mV/_C
mW
S
GS
DS
D
Threshold Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
DV
/DT
= V , I = 0.86 mA
−7
78
19
GS(th)
J
GS
DS
D
R
V
GS
V
DS
= 10 V, I = 18 A
D
DS(on)
g
FS
= 20 V, I = 18 A
D
C
3020
61
pF
iss
Output Capacitance
C
oss
V
DS
= 400 V, V = 0 V, f = 1 MHz
GS
Reverse Transfer Capacitance
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
C
7.0
597
107
66
rss
oss(eff.)
C
V
V
= 0 V to 400 V, V = 0 V
pF
pF
nC
DS
GS
C
= 0 V to 400 V, V = 0 V
GS
oss(er.)
DS
Q
g(tot)
Q
13
g(th)
V
= 10 V, V = 400 V, I = 18 A
DS D
GS
(Note 4)
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Q
22
gs
Q
26
gd
ESR
f = 1 MHz
2.4
W
t
26
26
62
4.0
ns
ns
ns
ns
d(on)
V
= 10 V, V = 400 V,
DD
Turn-On Rise Time
t
GS
D
r
I
= 18 A, R = 2.2 W
g
Turn-Off Delay Time
t
(Note 4)
d(off)
Turn-Off Fall Time
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS
Maximum Continuous Source to Drain
Diode Forward Current
I
36
90
A
A
S
V
V
= 0 V
= 0 V
GS
Maximum Pulsed Source to Drain
Diode Forward Current
I
SM
GS
Source to Drain Diode Forward
Voltage
V
SD
1.3
V
V
GS
= 0 V, I = 18 A
SD
Reverse Recovery Time
Charge Time
t
97
78
ns
rr
t
a
b
V
GS
= 0 V, dI /dt = 100 A/ms,
F
I
= 18 A
SD
Discharge Time
t
19
Reverse Recovery Charge
Q
349
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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3
NVHL095N65S3F
TYPICAL CHARACTERISTICS
100
100
V
GS
= 10 V
250 ms Pulse Test
= 25°C
250 ms Pulse Test
= 150°C
V
GS
= 10 V
8.0 V
7.0 V
6.5 V
T
T
C
C
8.0 V
7.0 V
6.5 V
6.0 V
6.0 V
5.5 V
10
1
10
5.5 V
0.1
1
0.2
2
20
0.1
1
10
V
DS
, DRAIN−SOURCE VOLTAGE (V)
V
DS
, DRAIN−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
255C
Figure 2. On−Region Characteristics
1505C
100
0.20
0.15
V
= 18 V
DS
250 ms Pulse Test
V
= 10 V
= 20 V
GS
T = 25°C
J
0.10
0.05
0
10
V
GS
T = 150°C
T = −55°C
J
J
1
3
4
5
6
7
8
0
20
40
60
80
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. Transfer Characteristics
Figure 4. On−Resistance Variation vs. Drain
Current and Gate Voltage
1000
100K
10K
1K
V
= 20 V
DS
250 ms Pulse Test
C
100
10
1
iss
C
T = 150°C
J
oss
T = 25°C
J
100
10
V
GS
= 0 V
0.1
f = 1 MHz
C
rss
C
C
C
= C + C (C = shorted)
gs gd ds
iss
1
0.01
= C + C
oss
rss
ds
gd
T = −55°C
J
= C
gd
0.001
0.1
0
0.5
1.0
1.5
0.1
1
10
100
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. Body Diode Forward Voltage
Figure 6. Capacitance Characteristics
Variation vs. Source Current and Temperature
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4
NVHL095N65S3F
TYPICAL CHARACTERISTICS
10
8
1.2
V
I
= 0 V
= 10 mA
GS
I
D
= 18 A
V
DD
= 130 V
D
1.1
1.0
V
DD
= 400 V
6
4
0.9
0.8
2
0
0
14
28
42
56
70
−75
−25
25
75
125
175
1000
650
Q , TOTAL GATE CHARGE (nC)
T , JUNCTION TEMPERATURE (°C)
J
G
Figure 7. Gate Charge Characteristics
Figure 8. Breakdown Voltage Variation vs.
Temperature
3.0
200
100
30 ms
I
V
= 18 A
= 10 V
D
2.5
2.0
1.5
1.0
GS
100 ms
10
Operation in this Area
is Limited by R
1 ms
10 ms
DC
DS(on)
1
T
= 25°C
T = 150°C
Single Pulse
C
0.5
0
J
0.1
−75
−25
25
75
125
175
1
10
100
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−SOURCE VOLTAGE (V)
Figure 9. On−Resistance Variation vs.
Figure 10. Maximum Safe Operating Area
Temperature
40
35
30
25
17
13.6
10.2
6.8
20
15
10
5
3.4
0
0
25
50
75
100
125
150
0
130
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
260
390
520
T , CASE TEMPERATURE (°C)
V
C
Figure 11. Maximum Drain Current vs. Case
Temperature
Figure 12. EOSS vs. Drain−to−Source Voltage
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5
NVHL095N65S3F
TYPICAL CHARACTERISTICS
300
250
200
150
1.5
I
D
= 0.86 mA
I
= 18 A
D
1.4
1.3
1.2
1.1
1.0
0.9
0.8
T = 150°C
J
100
0
0.7
0.6
T = 25°C
J
0.5
5
6
7
8
9
10
−75
−25
25
75
125
175
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 13. RDS(on) vs. Gate Voltage
Figure 14. Normalized Gate Threshold Voltage
vs. Temperature
100
If R = 0
AV
t
= (L)(I )/(1.3*RATED BV
− V
)
AS
DSS
DD
If R =/ 0
t
= (L/R)ln[(I
*R)/(1.3*RATED BV
− V ) +1]
DSS DD
AV
AS
Starting T = 25°C
J
10
Starting T = 125°C
J
1
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
t , TIME IN AVALANCHE (ms)
AV
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 15. Unclamped Inductive Switching Capability
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6
NVHL095N65S3F
TYPICAL CHARACTERISTICS
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Notes:
(t) = r(t) x R
P
DM
Z
q
q
JC
JC
0.01
0.01
R
= 0.4°C/W
q
JC
Peak T = P
Duty Cycle, D = t /t
x Z
(t) + T
JC C
t
q
J
DM
1
Single Pulse
t
1
2
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 16. Transient Thermal Response
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7
NVHL095N65S3F
V
GS
R
Q
g
L
V
DS
Q
Q
gd
gs
V
GS
DUT
I
G
= Const.
Figure 17. Gate Charge Test Circuit & Waveform
R
L
V
V
DS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
GS
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
Figure 18. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 19. Unclamped Inductive Switching Test Circuit & Waveforms
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8
NVHL095N65S3F
+
DUT
V
SD
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 20. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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9
NVHL095N65S3F
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
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10
NVHL095N65S3F
SUPERFET and FRFET are registered trademarks of Semiconductor Components Industries, LLC.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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For additional information, please contact your local Sales Representative
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◊
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