NVH4L015N065SC1 [ONSEMI]
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 12 mohm, 650V, M2, TO247−4L;
| 型号： | NVH4L015N065SC1 |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 12 mohm, 650V, M2, TO247−4L |
| 文件： | 总8页 (文件大小：353K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Silicon Carbide (SiC)
MOSFET – 12 mohm, 650 V,
M2, TO-247-4L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
650 V
18 mꢀ @ 18 V
142 A
D
NVH4L015N065SC1
Features
• Typ. R
= 12 mꢀ @ V = 18 V
GS
= 15 mꢀ @ V = 15 V
GS
G
DS(on)
S1: Driver Source
S2: Power Source
Typ. R
DS(on)
• Ultra Low Gate Charge (Q
= 283 nC)
S1
S2
G(tot)
• High Speed Switching with Low Capacitance (C = 430 pF)
N−CHANNEL MOSFET
oss
• 100% Avalanche Tested
• AEC−Q101 Qualified and PPAP Capable
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Typical Applications
D
S2
• Automotive On Board Charger
• Automotive DC-DC Converter for EV/HEV
• Automotive Traction Inverter
S1
G
TO247−4L
CASE 340CJ
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
MARKING DIAGRAM
Parameter
Drain−to−Source Voltage
Symbol
Value
Unit
V
DSS
650
V
V
V
Gate−to−Source Voltage
V
GS
−8/+22
−5/+18
Recommended Operation Values
of Gate−to−Source Voltage
T
< 175°C
= 25°C
V
GSop
C
H4L015
N065SC
AYWWZZ
Continuous Drain
Current (Note 1)
Steady
State
T
I
D
142
500
100
250
483
798
A
W
A
C
Power Dissipation
(Note 1)
P
D
Continuous Drain
Current (Note 1)
Steady
State
T
C
= 100°C
I
D
H4L015N065SC = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
Power Dissipation
(Note 1)
P
D
W
A
Pulsed Drain Current
(Note 2)
T
= 25°C
I
DM
C
ZZ
= Lot Traceability
Single Pulse Surge
Drain Current Capability
T = 25°C, t = 10 ꢁ s,
A
I
A
p
DSC
ORDERING INFORMATION
R
= 4.7
ꢀ
G
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
J
stg
Device
NVH4L015N065SC1
Package
Shipping
+175
TO247−4L
30 Units /
Tube
Source Current (Body Diode)
I
S
114
84
A
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 13 A, L = 1 mH) (Note 3)
L(pk)
Maximum Lead Temperature for Soldering
(1/8″ from case for 5 s)
T
L
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. EAS of 84 mJ is based on starting T = 25°C; L = 1 mH, I = 13 A,
J
AS
V
DD
= 50 V, V = 18 V.
GS
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
May, 2022 − Rev. 4
NVH4L015N065SC1/D
NVH4L015N065SC1
Table 1. THERMAL CHARACTERISTICS
Parameter
Symbol
Max
0.3
40
Unit
Junction−to−Case − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 1)
R
°C/W
ꢂ
JC
R
ꢂ
JA
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 1 mA
650
−
−
−
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
I = 20 mA, referenced to 25°C
D
−
0.12
V/°C
(BR)DSS
J
Zero Gate Voltage Drain Current
I
V
V
= 0 V,
T = 25°C
−
−
−
−
−
−
10
1
ꢁ A
mA
nA
DSS
GS
DS
J
= 650 V
T = 175°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
V
V
= +18/−5 V, V = 0 V
250
GSS
GS
DS
V
R
= V , I = 25 mA
1.8
−5
−
2.5
−
4.3
+18
−
V
V
GS(TH)
GS
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
GOP
V
GS
V
GS
V
GS
V
DS
= 15 V, I = 75 A, T = 25°C
15
12
16
47
mꢀ
DS(on)
D
J
= 18 V, I = 75 A, T = 25°C
−
18
−
D
J
= 18 V, I = 75 A, T = 175°C
−
D
J
Forward Transconductance
g
FS
= 10 V, I = 75 A
−
−
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0 V, f = 1 MHz, V = 325 V
−
−
−
−
−
−
−
4790
430
33
−
−
−
−
−
−
−
pF
nC
ISS
GS
DS
Output Capacitance
C
OSS
C
RSS
Reverse Transfer Capacitance
Total Gate Charge
Q
V
D
= −5/18 V, V = 520 V,
283
72
G(TOT)
GS
DS
I
= 75 A
Gate−to−Source Charge
Gate−to−Drain Charge
Gate−Resistance
Q
Q
GS
64
GD
R
f = 1 MHz
1.6
ꢀ
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
t
V
D
= −5/18 V, V = 400 V,
−
−
−
−
−
−
−
23
26
−
−
−
−
−
−
−
ns
d(ON)
GS
DS
I
= 75 A, R = 2.2 ꢀ
G
t
r
Inductive load
Turn−Off Delay Time
t
49
d(OFF)
Fall Time
t
f
9.6
167
276
443
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
ON
ꢁ J
E
OFF
E
tot
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Source−Drain Diode Forward
I
V
V
= −5 V, T = 25°C
−
−
−
−
−
114
483
−
A
V
SD
GS
J
Current
Pulsed Source−Drain Diode Forward
Current (Note 2)
I
SDM
Forward Diode Voltage
V
= −5 V, I = 75 A, T = 25°C
4.8
SD
GS
SD
J
www.onsemi.com
2
NVH4L015N065SC1
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
SOURCE−DRAIN DIODE CHARACTERISTICS
Reverse Recovery Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
V
= −5/18 V, I = 75 A,
−
−
−
−
−
−
28
234
23
−
−
−
−
−
−
ns
nC
ꢁ J
A
RR
GS
S
SD
dI /dt = 1000 A/ꢁ s
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge Time
Q
RR
E
REC
I
16
RRM
Ta
17
ns
ns
Discharge Time
Tb
11
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
NVH4L015N065SC1
TYPICAL CHARACTERISTICS
280
240
200
160
120
80
4
V
GS
= 18 V
15 V
12 V
18 V
12 V
3
2
15 V
10 V
9 V
8 V
1
40
0
0
0
2
4
6
8
10
0
40
80
120
160
200
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
1.6
120
100
80
60
40
20
0
I
D
= 75 A
I
V
= 75 A
D
= 18 V
GS
1.4
1.2
1.0
0.8
T = 150°C
J
T = 25°C
J
−75 −50 −25
0
25 50 75 100 125 150 175
6
9
12
15
18
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
280
100
280
240
V
DS
= 10 V
V
GS
= −5 V
T = 175°C
J
200
160
120
80
T = 25°C
J
10
1
T = 175°C
T = 25°C
J
J
T = −55°C
J
40
T = −55°C
J
0
2
4
6
8
3
6
9
12
15
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
www.onsemi.com
4
NVH4L015N065SC1
TYPICAL CHARACTERISTICS (continued)
20
15
10
5
10000
I
D
= 75 A
C
iss
V
= 650 V
DD
1000
100
10
V
= 390 V
DD
V
= 520 V
C
DD
oss
0
C
f = 1 MHz
= 0 V
rss
V
GS
−5
0
50
100
150
200
250
300
350
0.1
1
10
100
650
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 7. Gate−to−Source Voltage vs. Total
Figure 8. Capacitance vs. Drain−to−Source
Charge
Voltage
100
10
1
160
120
80
V
= 18 V
GS
T = 25°C
J
40
R
= 0.3°C/W
ꢂ
JC
0
25
50
75
100
125
150
175
0.001
0.01
0.1
1
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
1000
100000
10000
1000
Single Pulse
R
= 0.3°C/W
ꢂ
JC
10 ꢁ s
T
C
= 25°C
100
10
1
100 ꢁ s
1 ms
10 ms
10 ms
Single Pulse
T = Max Rated
J
DC
R
= 0.3°C/W
ꢂ
JC
T
= 25°C
C
100
0.00001
0.1
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
www.onsemi.com
5
NVH4L015N065SC1
TYPICAL CHARACTERISTICS (continued)
1
0.1
0.5 Duty Cycle
0.2
0.1
0.05
0.02
P
0.01
0.001
DM
0.01
Notes:
= 0.3°C/W
Duty Cycle, D = t /t
R
ꢂ
JC
Single Pulse
t
1
1
2
t
2
0.00001
0.0001
0.001
0.01
0.1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction−to−Case Thermal Response
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−4LD
CASE 340CJ
ISSUE A
DATE 16 SEP 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13852G
TO−247−4LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
NVH4L018N075SC1
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 13.5mohm, 750V, M2, TO247−4L
ONSEMI
NVH4L020N090SC1
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 900 V, M2, TO247−4L
ONSEMI
NVH4L020N120SC1
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247−4L
ONSEMI
NVH4L040N120SC1
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−4L
ONSEMI
©2020 ICPDF网 联系我们和版权申明