NVH040N65S3F [ONSEMI]
Single N-Channel Power MOSFET SUPERFET ® III, FRFET®, 650 V , 65 A, 40 mΩ, TO-247;
| 型号： | NVH040N65S3F |
| 厂家： | 
ONSEMI |
| 描述： | Single N-Channel Power MOSFET SUPERFET ® III, FRFET®, 650 V , 65 A, 40 mΩ, TO-247 |
| 文件： | 总11页 (文件大小：272K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET – Power,
N-Channel, SUPERFET) III,
FRFET)
650 V, 65 A, 40 mW
NVH040N65S3F
Description
www.onsemi.com
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET is very suitable for the
various power system for miniaturization and higher efficiency.
SUPERFET III FRFET MOSFET’s optimized reverse recovery
performance of body diode can remove additional component and
improve system reliability.
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
40 mW @ 10 V
65 A
D
G
Features
• 700 V @ T = 150°C
J
S
• Typ. R
= 33.8 mW
POWER MOSFET
DS(on)
• Ultra Low Gate Charge (Typ. Q = 153 nC)
g
• Low Effective Output Capacitance (Typ. C
= 1333 pF)
oss(eff.)
• 100% Avalanche Tested
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
TO−247−3LD
CASE 340CK
• Automotive On Board Charger HEV−EV
• Automotive DC/DC converter for HEV−EV
MARKING DIAGRAM
AYWWZZ
NVH
040N65S3F
NVH040N65S3F
A
YWW
ZZ
= Specific Device Code
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
September, 2020 − Rev. 0
NVH040N65S3F/D
NVH040N65S3F
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
C
Symbol
Parameter
Value
650
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
− DC
30
V
− AC (f > 1 Hz)
30
I
D
Drain Current
− Continuous (T = 25°C)
65
A
C
− Continuous (T = 100°C)
45
C
I
Drain Current
− Pulsed (Note 1)
162.5
1009
4.46
100
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
mJ
AS
AR
E
mJ
dv/dt
V/ns
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
50
P
(T = 25°C)
446
W
W/°C
°C
D
C
− Derate Above 25°C
3.57
−55 to +150
300
T , T
Operating and Storage Temperature Range
J
STG
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I = 9 A, R = 25 W, starting T = 25°C.
AS
G
J
3. I ≤ 32.5 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.28
40
Unit
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
_C/W
q
JC
JA
R
q
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Shipping (Qty / Packing)
NVH040N65S3F
NVH040N65S3F
TO−247 G03
Tube
30 Units / Tube
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2
NVH040N65S3F
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
650
700
−
−
−
−
−
−
V
V
V
V
I
= 0 V, I = 1 mA, T = 25_C
DSS
GS
D
J
= 0 V, I = 10 mA, T = 150_C
GS
D
J
DBV
/ DT
Breakdown Voltage Temperature
Coefficient
= 10 mA, Referenced to 25_C
0.64
V/_C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 650 V, V = 0 V
−
−
−
−
103
−
10
−
mA
DSS
GS
= 520 V, T = 125_C
C
I
Gate to Body Leakage Current
=
30 V, V = 0 V
100
nA
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V , I = 2.1 mA
3.0
−
−
5.0
40
−
V
mW
S
GS(th)
DS(on)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10 V, I = 32.5 A
33.8
40
D
g
FS
= 20 V, I = 32.5 A
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
−
−
5875
140
1333
241
153
51
−
−
−
−
−
−
−
−
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
DS
V
DS
V
DS
= 0 V to 400 V, V = 0 V
GS
oss(eff.)
C
= 0 V to 400 V, V = 0 V
GS
oss(er.)
Q
= 400 V, I = 32.5 A, V = 10 V
D GS
g(tot)
(Note 4)
Q
gs
Q
61
gd
ESR
f = 1 MHz
1.9
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
= 400 V, I = 32.5 A, V = 10 V
−
−
−
−
41
53
96
28
−
−
−
−
ns
ns
ns
ns
d(on)
DD
g
D
GS
R = 2.2 W
t
r
(Note 4)
t
d(off)
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
−
−
−
−
−
−
−
65
162.5
1.3
−
A
A
S
I
SM
V
SD
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I = 32.5 A
−
V
GS
SD
t
rr
= 0 V, I = 32.5 A,
159
840
ns
nC
GS
SD
dI /dt = 100 A/ms
F
Q
Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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3
NVH040N65S3F
TYPICAL CHARACTERISTICS
200
100
200
8.0 V
V
GS
= 10 V
250 ms Pulse Test
V
GS
= 10 V
8.0 V
7.0 V
6.5 V
T
C
= 150°C
7.0 V
6.5 V
100
6.0 V
6.0 V
5.5 V
10
5.5 V
10
1
1
250 ms Pulse Test
T
C
= 25°C
0.1
0.2
1
10
20
0.1
1
10
20
V
DS
, DRAIN−SOURCE VOLTAGE (V)
V
DS
, DRAIN−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. On−Region Characteristics
200
100
0.06
0.05
0.04
250 ms Pulse Test
= 20 V
T
C
= 25°C
V
DS
V
= 10 V
= 20 V
GS
T = 25°C
J
10
1
V
GS
0.03
0.02
T = 150°C
J
T = −55°C
J
3
4
5
6
7
8
9
0
30
60
90
120
150
180
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. Transfer Characteristics
Figure 4. On−Resistance Variation vs. Drain
Current and Gate Voltage
1000
100
10
1M
100K
10K
1K
250 ms Pulse Test
= 0 V
V
GS
C
iss
T = 150°C
J
1
f = 1 MHz
C
oss
V
GS
= 0 V
T = 25°C
J
0.1
100
C
C
C
= C + C (C = shorted)
gs gd ds
iss
C
rss
0.01
10
1
= C + C
oss
rss
ds
gd
= C
gd
T = −55°C
J
0.001
−1
0
1
2
3
0
0.5
1.0
1.5
2.0
10
10
10
10
10
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. Body Diode Forward Voltage
Figure 6. Capacitance Characteristics
Variation vs. Source Current and Temperature
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4
NVH040N65S3F
TYPICAL CHARACTERISTICS
10
8
1.2
V
DD
= 130 V
I
D
= 32.5 A
V
= 0 V
= 10 mA
GS
I
D
V
= 400 V
DD
1.1
1.0
6
4
0.9
0.8
2
0
0
60
120
180
175
150
−75
−25
25
75
125
175
Q , TOTAL GATE CHARGECHARGE (nC)
T , JUNCTION TEMPERATURE (°C)
J
g
Figure 7. Gate Charge Characteristics
Figure 8. Breakdown Voltage Variation vs.
Temperature
300
100
3.0
2.5
2.0
1.5
1.0
30 ms
V
= 10 V
GS
= 32.5 A
I
D
100 ms
1 ms
10
10 ms
DC
Operation in this Area
is Limited by R
DS(ON)
1
T
= 25°C
T = 150°C
Single Pulse
C
0.5
0
J
0.1
−75
−25
25
75
125
1
10
100
1K
T , JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−SOURCE VOLTAGE (V)
J
Figure 9. On−Resistance Variation vs.
Figure 10. Maximum Safe Operating Area
Temperature
80
40
35
30
25
20
15
10
70
60
50
40
30
20
5
0
10
0
25
50
75
100
125
0
130
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
260
390
520
650
T , CASE TEMPERATURE (°C)
V
C
Figure 11. Maximum Drain Current vs. Case
Temperature
Figure 12. EOSS vs. Drain−to−Source Voltage
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5
NVH040N65S3F
TYPICAL CHARACTERISTICS
200
180
160
140
120
100
80
1.2
1.0
V
= V
DS
= 2.1 mA
GS
I
D
T = 150°C
A
0.8
0.6
60
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
T = 25°C
A
40
20
0
I
D
= 32.5 A
4
5
6
7
8
9
10
−80
−40
0
40
80
120
160
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 13. RDS(ON) vs. Gate Voltage
Figure 14. Normalized Gate Threshold Voltage
vs. Temperature
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
P
DM
Z
R
(t) = r(t) x R
q
JC
q
JC
0.01
0.01
= 0.28°C/W
q
JC
t
1
Peak T = PDM x Z (t) + T
Duty Cycle, D = t / t
q
J
JC
C
Single Pulse
0.00001
t
2
1
2
0.001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (s)
Figure 15. Transient Thermal Response Curve
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6
NVH040N65S3F
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 16. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
t
d(off)
t
r
t
f
d(on)
t
on
t
off
Figure 17. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 18. Unclamped Inductive Switching Test Circuit & Waveforms
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7
NVH040N65S3F
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 19. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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8
NVH040N65S3F
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
P1
A
E
P
A
D2
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
(2X) e
DIM
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
A
A1
A2
b
b2
b4
c
D
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
E1 12.81
~
~
E2
e
4.96 5.08 5.20
5.56
~
~
L
L1
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
P
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
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9
NVH040N65S3F
SUPERFET is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage
may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer
is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of
any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and
do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices
intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and
hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was
negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright
laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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For additional information, please contact your local
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◊
NVH040N65S3F/D
相关型号：
NVH082N65S3F
Single N-Channel Power MOSFET SUPERFET® III, FRFET®, 650 V , 40 A, 82 mΩ, TO-247
ONSEMI
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