NTTFS5C466NLTAG [ONSEMI]
单 N 沟道，功率 MOSFET，40V，51 A，7.3mΩ;
| 型号： | NTTFS5C466NLTAG |
| 厂家： | 
ONSEMI |
| 描述： | 单 N 沟道，功率 MOSFET，40V，51 A，7.3mΩ 脉冲 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Is Now
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
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MOSFET – Power, Single,
N-Channel
40 V, 7.3 mW, 51 A
NTTFS5C466NL
Features
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• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• Low Capacitance to Minimize Driver Losses
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
• These Devices are Pb−Free and are RoHS Compliant
7.3 mꢃ @ 10 V
12 mꢃ @ 4.5 V
40 V
51 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
V
DSS
N−Channel
D (5 − 8)
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
D
51
A
C
ꢀ
JC
T
C
36
(Notes 1, 2, 3, 4)
Steady
State
Power Dissipation
T
C
P
D
38
W
A
G (4)
R
(Notes 1, 2, 3)
ꢀ
JC
T
C
= 100°C
19
Continuous Drain
Current R
T = 25°C
A
I
D
14
S (1, 2, 3)
ꢀ
JA
T = 100°C
A
12
(Notes 1, 3, 4)
Steady
State
Power Dissipation
T = 25°C
A
P
D
3.1
2.1
200
W
MARKING DIAGRAM
R
(Notes 1, 3)
ꢀ
JA
T = 100°C
A
1
1
S
S
S
G
D
D
D
D
Pulsed Drain Current
T = 25°C, t = 10 ꢁ s
A
I
DM
A
p
466L
AYWWG
G
WDFN8
(m8FL)
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
CASE 511AB
Source Current (Body Diode)
I
10
72
A
S
466L
A
Y
= Specific Device Code
= Assembly Location
= Year
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 3 A)
L(pk)
WW
G
= Work Week
= Pb−Free Package
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol
Value
3.5
Unit
Junction−to−Case − Steady State (Note 3)
Junction−to−Ambient − Steady State (Note 3)
R
°C/W
ꢀ
JC
R
48
ꢀ
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (ꢂ ) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
September, 2019 − Rev. 4
NTTFS5C466NL/D
NTTFS5C466NL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 ꢁ A
40
V
(BR)DSS
D
Drain−to−Source Breakdown Volt-
age Temperature Coefficient
V
/
29
mV/°
C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
T = 25°C
10
ꢁ A
nA
V
DSS
J
V
= 0 V,
GS
DS
V
= 40 V
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
V
V
= 0 V, V = 20 V
GS
GSS
DS
V
= V , I = 30 ꢁ A
1.2
2.2
7.3
12
GS(TH)
GS
DS
D
Drain−to−Source On Resistance
R
V
= 10 V, I = 10 A
6.1
9.7
33
mꢃ
DS(on)
GS
D
= 4.5 V, I = 10 A
GS
D
Forward Transconductance
g
V
= 15 V, I = 25 A
S
FS
DS
D
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
V
= 0 V, f = 1.0 MHz,
DS
880
340
16
pF
iss
GS
V
= 25 V
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
oss
C
rss
Q
7.0
1.8
3.3
2.5
16
nC
nC
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
G(TH)
V
= 4.5 V, V = 20 V, I = 25 A
DS D
GS
Q
GS
Q
GD
Q
V
= 10 V, V = 20 V, I = 25 A
nC
G(TOT)
GS
DS
D
Gate Resistance
R
T = 25°C
A
3.0
ꢃ
G
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
t
t
10
67
26
32
ns
d(on)
t
r
V
= 4.5 V, V = 20 V,
DS
GS
D
I
= 25 A, R = 2.5 ꢃ
G
Turn−Off Delay Time
Fall Time
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
= 0 V,
T = 25°C
0.9
0.8
22
1.2
V
SD
GS
S
J
I
= 20 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
10
a
V
GS
= 0 V, dl /dt = 100 A/ꢁ s,
S
I
S
= 25 A
Discharge Time
12
b
Reverse Recovery Charge
Q
6.0
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width ≤ 300 ꢁ s, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTTFS5C466NL
TYPICAL CHARACTERISTICS
70
60
50
40
30
20
100
V
GS
= 10 to 5 V
90
80
70
60
50
40
30
20
V
DS
= 10 V
4.5 V
3.8 V
3.6 V
3.4 V
3.2 V
T = 25°C
J
10
0
10
0
T = 125°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
12
11
10
9
T = 25°C
J
V
= 4.5 V
GS
I
= 25 A
D
25
20
15
10
T = 25°C
J
8
7
V
= 10 V
GS
6
5
0
5
4
3
4
5
6
7
8
9
10
10
15
20
25
30
35
40
45
50
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.1
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
100K
10K
1K
T = 150°C
J
I
= 25 A
= 10 V
D
V
GS
T = 125°C
J
T = 85°C
J
100
10
T = 25°C
J
0.7
0.6
0.5
1
−50 −25
0
25
50
75 100 125 150 175
5
10
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTTFS5C466NL
TYPICAL CHARACTERISTICS
10
9
10K
1K
8
C
iss
7
C
oss
6
100
5
Q
Q
gd
gs
C
rss
4
3
10
1
T = 25°C
GS
f = 1 MHz
V
DS
= 20 V
J
V
2
1
0
= 0 V
I
D
= 25 A
T = 25°C
J
0
5
10
15
20
25
30
35
40
0
2
4
6
8
10
12
14
16
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
10
1000
100
V
GS
= 0 V
t
r
t
f
T = 125°C
J
1
t
d(off)
10
1
t
d(on)
V
V
I
= 4.5 V
= 20 V
= 25 A
GS
DS
D
T = 25°C
T = −55°C
J
J
0.1
1
10
R , GATE RESISTANCE (ꢃ)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
100
10
Single Pulse
V
GS
≤ 10 V
T
C
= 25°C
T
= 25°C
J(initial)
10
T
= 100°C
J(initial)
1
10 ꢁ s
0.5 ms
1 ms
10 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.00001
0.1
0.1
1
10
100
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NTTFS5C466NL
TYPICAL CHARACTERISTICS
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTTFS5C466NLTAG
466L
WDFN8
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
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