NTTFS022N15MC [ONSEMI]
Power MOSFET, N Channel, 150V, 37.2 A, 22mΩ;
| 型号： | NTTFS022N15MC |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, N Channel, 150V, 37.2 A, 22mΩ |
| 文件： | 总7页 (文件大小：325K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET - Power, Single
N-Channel, Shielded Gate,
PowerTrench)
150 V, 22 mW, 37.2 A
NTTFS022N15MC
www.onsemi.com
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
• Low Capacitance to Minimize Driver Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
150 V
22 mW @ 10 V
37.2 A
N−CHANNEL MOSFET
Typical Applications
• Primary DC−DC MOSFET
• Synchronous Rectifier in DC−DC and AC−DC
• Motor Drive
D
D
D
D
5
6
7
8
4
3
2
1
G
S
S
S
• Capable of 175°C Tj Max Rating
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
150
20
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
V
Continuous Drain Cur-
T
T
= 25°C
= 25°C
I
37.2
A
C
D
rent R
(Note 5)
q
JC
Power Dissipation
(Note 5)
P
71.4
7.4
W
A
C
D
R
q
JC
Continuous Drain Cur-
rent (Notes 1, 5)
T = 25°C
A
I
D
Steady
State
WDFN8
CASE 483AW
Power Dissipation
(Notes 1, 5)
T = 25°C
P
D
P
D
2.8
W
W
A
MARKING DIAGRAM
Power Dissipation
(Notes 2, 5)
T = 25°C
A
1.2
22MC
&Z&3&K
Pulsed Drain Current (Note 3)
T
C
= 25°C
I
158
A
DM
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
J
stg
+175
22MC = Specific Device Code
&Z = Assembly Location
&3 = 3−Digit Date Code
&K = Lot Traceability
Single Pulse Drain−to−Source Avalanche
E
AS
96
mJ
Energy (I
= 8 A) (Note 4)
L(pk)
Maximum Lead Temperature for Soldering
Purposes (1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
†
Device
Package
Shipping
2
1. Surface mounted on a FR−4 board using 1 in pad of 2 oz copper.
2. Surface mounted on a FR−4 board using the minimum recommended pad of
2 oz copper.
NTTFS022N15MC
WDFN8
(Pb−Free)
3000 / Tape &
Reel
3. Pulsed ID please refer to Figure 12 SOA graph for more details
4. E of 96 mJ is based on starting T = 25°C; L = 3 mH, I = 8 A,
AS
DD
J
AS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
V
= 150 V, V = 10 V.
GS
5. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
October, 2020 − Rev. 0
NTTFS022N15MC/D
NTTFS022N15MC
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
2.1
Unit
°C/W
°C/W
°C/W
Thermal Resistance Junction−to−Case − Steady State (Note 5)
Thermal Resistance Junction−to−Ambient − Steady State (Notes 1, 5)
Thermal Resistance Junction−to−Ambient − Steady State (Notes 2, 5)
R
q
JC
R
53
q
JA
R
125
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
150
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
I = 250 mA, referenced to 25°C
D
75
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
GS
= 0 V, V = 120 V, T = 25°C
1
mA
DSS
DS
J
I
V
GS
=
20 V, V = 0 V
100
nA
GSS
DS
Gate Threshold Voltage
V
V
GS
= V , I = 100 mA
2.5
4.5
V
GS(TH)
DS
D
Gate Threshold Temperature
Coefficient
V
/T
I
D
= 100 mA, referenced to 25°C
−8.4
mV/°C
GS(TH)
J
Drain−to−Source On Resistance
R
V
= 10 V, I = 18 A
17.1
19
22
mW
mW
S
DS(on)
GS
D
V
= 8 V, I = 9 A
25.3
GS
D
Forward Transconductance
g
FS
V
= 10 V, I = 18 A
37
DS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
1315
380
6
pF
ISS
V
GS
= 0 V, f = 1 MHz
DS
Output Capacitance
Reverse Transfer Capacitance
Gate−Resistance
C
OSS
C
RSS
V
= 75 V
R
0.6
17
1.2
W
G
Total Gate Charge
Q
nC
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
4.4
7.2
2.7
5.6
41
G(TH)
Q
V
GS
= 10 V, V = 75 V, I = 18 A
DS D
GS
GD
GP
Q
V
V
Output Charge
Q
V
GS
= 0 V, V = 75 V
nC
OSS
DD
RESISTIVE SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
t
14
2.8
17
ns
d(on)
t
r
V
= 10 V, V = 75 V,
DS
GS
D
I
= 18 A, R = 6 W
G
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
2.9
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
V
V
= 0 V, I = 18 A, T = 25°C
0.86
45
1.2
V
SD
RR
GS
S
J
t
ns
nC
ns
nC
V
S
= 0 V, V = 75 V
DD
GS
dI /dt = 300 A/ms, I = 18 A
S
Q
155
28
RR
RR
t
V
GS
= 0 V, V = 75 V
DD
dI /dt = 1000 A/ms, I = 18 A
S
S
Q
242
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Switching characteristics are independent of operating junction temperature
www.onsemi.com
2
NTTFS022N15MC
TYPICAL CHARACTERISTICS
90
75
60
45
30
6
10 V
8.0 V
7.0 V
5.5 V
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
5
4
3
2
V
= 6.0 V
GS
7.0 V
8.0 V
6.0 V
V
= 5.5 V
GS
10 V
15
0
1
0
0
2
4
6
8
10
0
15
30
45
60
75
90
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
120
80
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
I
= 18 A
I
V
= 18 A
D
D
= 10 V
GS
60
T = 150°C
J
30
0
0.8
0.6
T = 25°C
J
−75 −50 −25
0
25 50 75 100 125 150 175
5
6
7
8
9
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. Normalized On−Resistance vs.
Figure 4. On−Resistance vs. Gate−to−Source
Junction Temperature
Voltage
100
10
1
90
75
60
45
V
GS
= 0 V
V
DS
= 10 V
0.1
30
T = 25°C
J
0.01
T = 175°C
15
0
J
T = 150°C
J
T = −55°C
T = −55°C
J
J
T = 25°C
J
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
3
4
5
6
7
8
9
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source−to−Drain Diode Forward
Voltage vs. Source Current
www.onsemi.com
3
NTTFS022N15MC
TYPICAL CHARACTERISTICS
10K
10
8
I
D
= 18 A
V
DD
= 25 V
V
DD
= 75 V
C
ISS
1K
C
OSS
6
V
DD
= 50 V
100
4
C
RSS
10
1
2
0
f = 1 MHz
= 0 V
V
GS
0
5
10
Q , GATE CHARGE (nC)
15
20
0.1
1
10
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
100 150
V
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain−to−Source
Voltage
40
35
30
25
20
15
10
100K
10K
1K
V
= 10 V
GS
V
= 8 V
GS
100
10
5
0
R
= 2.1°C/W
q
JC
0.00001 0.0001 0.001
0.01
0.1
1
25
50
75
100
125
150
175
T , CASE TEMPERATURE (°C)
C
t, PULSE WIDTH (s)
Figure 9. Drain Current vs. Case Temperature
Figure 10. Peak Power
30
200
100
1 ms
10 ms
10 ms
100 ms
This area is
limited by
R
Starting T = 25°C
10
1
DS(on)
J
10
100 ms/DC
Starting T = 100°C
J
Single Pulse
= 2.1°C/W
R
q
JC
T
C
= 25°C
Starting T = 150°C
J
0.1
R
Limit
DS(on)
Thermal Limit
Package Limit
1
0.01
0.001
0.01
t
0.1
1
10
100
0.1
1
10
100 200
, TIME IN AVALANCHE (mS)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
AV
Figure 11. Unclamped Inductive Switching
Capability
Figure 12. Forward Bias Safe Operating Area
www.onsemi.com
4
NTTFS022N15MC
TYPICAL CHARACTERISTICS
10
1
50% Duty Cycle
20%
10%
5%
0.1
0.01
2%
1%
Single Pulse
Notes:
RqJC = 2.15C/W
Peak TJ = PDM x Z qJC (t) + TC
Duty Cycle, D = t1 / t 2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Impedance
POWERTRENCH is a registered trademark on Semiconductor Components Industries, LLC.
www.onsemi.com
5
NTTFS022N15MC
PACKAGE DIMENSIONS
WDFN8 3.3X3.3, 0.65P
CASE 483AW
ISSUE A
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
ON Semiconductor Website: www.onsemi.com
◊
www.onsemi.com
相关型号：
©2020 ICPDF网 联系我们和版权申明